FR2260869A1 - Semiconductor protective cct. against potential rise - has differential doping levels in defined regions forming lower blocking impedance - Google Patents

Semiconductor protective cct. against potential rise - has differential doping levels in defined regions forming lower blocking impedance

Info

Publication number
FR2260869A1
FR2260869A1 FR7503827A FR7503827A FR2260869A1 FR 2260869 A1 FR2260869 A1 FR 2260869A1 FR 7503827 A FR7503827 A FR 7503827A FR 7503827 A FR7503827 A FR 7503827A FR 2260869 A1 FR2260869 A1 FR 2260869A1
Authority
FR
France
Prior art keywords
junction
doping levels
cct
lower blocking
defined regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7503827A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2260869A1 publication Critical patent/FR2260869A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
FR7503827A 1974-02-11 1975-02-07 Semiconductor protective cct. against potential rise - has differential doping levels in defined regions forming lower blocking impedance Withdrawn FR2260869A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44107074A 1974-02-11 1974-02-11

Publications (1)

Publication Number Publication Date
FR2260869A1 true FR2260869A1 (en) 1975-09-05

Family

ID=23751378

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7503827A Withdrawn FR2260869A1 (en) 1974-02-11 1975-02-07 Semiconductor protective cct. against potential rise - has differential doping levels in defined regions forming lower blocking impedance

Country Status (4)

Country Link
JP (1) JPS50116182A (US07223432-20070529-C00017.png)
DE (1) DE2505574A1 (US07223432-20070529-C00017.png)
FR (1) FR2260869A1 (US07223432-20070529-C00017.png)
NL (1) NL7501240A (US07223432-20070529-C00017.png)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0168678A2 (en) * 1984-07-18 1986-01-22 International Business Machines Corporation Integrated overvoltage protection circuit
EP0333563A1 (fr) * 1988-03-16 1989-09-20 Siemens Automotive S.A. Dispositif de commande de l'alimentation électrique d'une charge en circuit intégré de puissance "intelligent"
EP0624906A1 (en) * 1993-05-13 1994-11-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated structure circuit for the protection of power devices against overvoltages
US5777367A (en) * 1993-09-30 1998-07-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages
EP1107314A1 (fr) * 1999-12-09 2001-06-13 STMicroelectronics SA Transistors mos durcis

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155344U (US07223432-20070529-C00017.png) * 1978-04-21 1979-10-29
JPS5531354U (US07223432-20070529-C00017.png) * 1978-08-18 1980-02-29
JPS5543864A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mis semiconductor device
JPS61100954A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0168678A2 (en) * 1984-07-18 1986-01-22 International Business Machines Corporation Integrated overvoltage protection circuit
EP0168678A3 (en) * 1984-07-18 1987-04-22 International Business Machines Corporation Integrated overvoltage protection circuit
EP0333563A1 (fr) * 1988-03-16 1989-09-20 Siemens Automotive S.A. Dispositif de commande de l'alimentation électrique d'une charge en circuit intégré de puissance "intelligent"
FR2628890A1 (fr) * 1988-03-16 1989-09-22 Bendix Electronics Sa Dispositif de commande de l'alimentation electrique d'une charge en circuit integre de puissance " intelligent "
US4992836A (en) * 1988-03-16 1991-02-12 Siemens Aktiengesellschaft Device for controlling the electrical supply to a load, in a "smart" power integrated circuit
EP0624906A1 (en) * 1993-05-13 1994-11-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated structure circuit for the protection of power devices against overvoltages
US5652455A (en) * 1993-05-13 1997-07-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure circuit for the protection of power devices against overvoltage
US5777367A (en) * 1993-09-30 1998-07-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages
EP1107314A1 (fr) * 1999-12-09 2001-06-13 STMicroelectronics SA Transistors mos durcis
FR2802339A1 (fr) * 1999-12-09 2001-06-15 St Microelectronics Sa Transistor mos durcis
US6630719B2 (en) 1999-12-09 2003-10-07 Stmicroelectronics S.A. Hardened MOS transistors

Also Published As

Publication number Publication date
NL7501240A (nl) 1975-08-13
JPS50116182A (US07223432-20070529-C00017.png) 1975-09-11
DE2505574A1 (de) 1975-08-14

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Legal Events

Date Code Title Description
ST Notification of lapse