FR2260383A1 - Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp - Google Patents

Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp

Info

Publication number
FR2260383A1
FR2260383A1 FR7404691A FR7404691A FR2260383A1 FR 2260383 A1 FR2260383 A1 FR 2260383A1 FR 7404691 A FR7404691 A FR 7404691A FR 7404691 A FR7404691 A FR 7404691A FR 2260383 A1 FR2260383 A1 FR 2260383A1
Authority
FR
France
Prior art keywords
iii
temp
cpd
chamber
matl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7404691A
Other languages
English (en)
French (fr)
Other versions
FR2260383B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7404691A priority Critical patent/FR2260383A1/fr
Publication of FR2260383A1 publication Critical patent/FR2260383A1/fr
Application granted granted Critical
Publication of FR2260383B1 publication Critical patent/FR2260383B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7404691A 1974-02-12 1974-02-12 Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp Granted FR2260383A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7404691A FR2260383A1 (en) 1974-02-12 1974-02-12 Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7404691A FR2260383A1 (en) 1974-02-12 1974-02-12 Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp

Publications (2)

Publication Number Publication Date
FR2260383A1 true FR2260383A1 (en) 1975-09-05
FR2260383B1 FR2260383B1 (enrdf_load_stackoverflow) 1978-09-08

Family

ID=9134807

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7404691A Granted FR2260383A1 (en) 1974-02-12 1974-02-12 Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp

Country Status (1)

Country Link
FR (1) FR2260383A1 (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
FR2260383B1 (enrdf_load_stackoverflow) 1978-09-08

Similar Documents

Publication Publication Date Title
ES8604346A1 (es) Un dispositivo para secar un solido humedecido con un disolvente o una mezcla de disolventes
FR2260383A1 (en) Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp
GB1257824A (enrdf_load_stackoverflow)
BE782449A (fr) Dispositif de serrure, notamment pour compartiment de chambre forte ou analogue
JPS5693412A (en) Superthin quartz oscillator
GB1035499A (en) Process for the manufacture of crystalline layers from low volatility substances in the gas phase
JPS5484990A (en) Crystal vibrator
FR2106956A5 (en) Cadmium sulphide-selenide crystals produc- - tion
MAMEDOV et al. Experimental research on the viscosity of meta-xylene at high pressures and temperatures(Capillary viscometer procedure for determining viscosity of meta-xylene at high pressure and temperatures)
JPS52124859A (en) Continuous vapor phase growth apparatus
US4093704A (en) Method for synthesis of III-V compounds
JPS5492086A (en) Thin-gauge crystal oscillator
SU129338A1 (ru) Способ получени полупроводниковых материалов, содержащих несколько летучих компонентов
FR2172768A1 (en) Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s)
Zakharov et al. Influence of surface processes on the penetration of hydrogen through molybdenum(Surface processes effect on hydrogen penetration and diffusion into thick Mo membranes)
Korb et al. Vapor pressure investigations in the system Zn-Si-P
BARDOLLE et al. Adsorption kinetics of oxygen at the surface of niobium single crystals at high temperatures and low pressures(Oxygen adsorption kinetics at Nb single crystal surface at high temperatures and low pressures)
JPS52137990A (en) Tuning fork type piezoelectric resonator
Pavlyk et al. Temperature characteristics of radiation-induced hydrogen discharge from NaCl crystals doped with hydrogen centers.
JPS5664442A (en) Manufacture of semiconductor device
JPS5459075A (en) Diffusing method of impurity
SCHULZE Adsorption equilibria of helium, hydrogen and neon on solid carbon dioxide(Temperature effects and adsorption equilibria for helium, hydrogen, and neon on carbon dioxide surface layer)[Ph. D. Thesis]
FR2076754A5 (en) Mercury (i) halide monocrystals, for optical equipment
GB775624A (en) Means for preventing aging effects in piezoelectric crystals
JPS5742123A (en) Manufacture of compound semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse