FR2260383A1 - Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp - Google Patents
Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated tempInfo
- Publication number
- FR2260383A1 FR2260383A1 FR7404691A FR7404691A FR2260383A1 FR 2260383 A1 FR2260383 A1 FR 2260383A1 FR 7404691 A FR7404691 A FR 7404691A FR 7404691 A FR7404691 A FR 7404691A FR 2260383 A1 FR2260383 A1 FR 2260383A1
- Authority
- FR
- France
- Prior art keywords
- iii
- temp
- cpd
- chamber
- matl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000003786 synthesis reaction Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7404691A FR2260383A1 (en) | 1974-02-12 | 1974-02-12 | Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7404691A FR2260383A1 (en) | 1974-02-12 | 1974-02-12 | Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2260383A1 true FR2260383A1 (en) | 1975-09-05 |
| FR2260383B1 FR2260383B1 (enrdf_load_stackoverflow) | 1978-09-08 |
Family
ID=9134807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7404691A Granted FR2260383A1 (en) | 1974-02-12 | 1974-02-12 | Synthesis of III-V cpd semiconductor matl - by passing vapour of gp V element over melt of gp III element at elevated temp |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2260383A1 (enrdf_load_stackoverflow) |
-
1974
- 1974-02-12 FR FR7404691A patent/FR2260383A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2260383B1 (enrdf_load_stackoverflow) | 1978-09-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |