FR2257999A1 - Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity - Google Patents

Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity

Info

Publication number
FR2257999A1
FR2257999A1 FR7441460A FR7441460A FR2257999A1 FR 2257999 A1 FR2257999 A1 FR 2257999A1 FR 7441460 A FR7441460 A FR 7441460A FR 7441460 A FR7441460 A FR 7441460A FR 2257999 A1 FR2257999 A1 FR 2257999A1
Authority
FR
France
Prior art keywords
layer
zone
layer zone
conductivity
cct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7441460A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2257999A1 publication Critical patent/FR2257999A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7441460A 1974-01-14 1974-12-17 Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity Withdrawn FR2257999A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43285374A 1974-01-14 1974-01-14

Publications (1)

Publication Number Publication Date
FR2257999A1 true FR2257999A1 (en) 1975-08-08

Family

ID=23717856

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441460A Withdrawn FR2257999A1 (en) 1974-01-14 1974-12-17 Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity

Country Status (3)

Country Link
JP (1) JPS50104574A (enrdf_load_stackoverflow)
DE (1) DE2445023A1 (enrdf_load_stackoverflow)
FR (1) FR2257999A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1047652A (en) * 1975-07-31 1979-01-30 National Semiconductor Corporation Monolithic integrated circuit transistor having very low collector resistance
JPS59195699U (ja) * 1983-06-14 1984-12-26 株式会社東芝 電子機器
CN109686780B (zh) * 2017-10-19 2023-06-09 中国电子科技集团公司第四十四研究所 硅基高电流传输比双达林顿晶体管及其制作方法

Also Published As

Publication number Publication date
JPS50104574A (enrdf_load_stackoverflow) 1975-08-18
DE2445023A1 (de) 1975-07-17

Similar Documents

Publication Publication Date Title
HK988A (en) A semiconductor integrated circuit device and method of manufacturing the same
GB1330790A (en) Semiconductor devices
GB1396896A (en) Semiconductor devices including field effect and bipolar transistors
GB1379975A (en) Methods of manufacturing a semiconductor device comprising a voltagedependant capacitance diode
DE3681291D1 (de) Kollektorkontakt eines integrierten bipolartransistors.
SE7714902L (sv) Effekttransistor
FR2257999A1 (en) Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity
ES438593A1 (es) Perfeccionamientos introducidos en un dispositivo semicon- ductor.
JPS5674959A (en) Semiconductor memroy
GB1334745A (en) Semiconductor devices
FR2319197A1 (fr) Circuit integre en logique a injection
GB1514578A (en) Semiconductor devices
KR860001488A (ko) 바이폴러 트랜지스터와 iil이 있는 반도체 장치
JPS56126960A (en) Manufacture of semiconductor device
FR2269788A1 (en) Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity
JPS5371572A (en) Manufacture of lateral pnp transistor
GB1405285A (en) Semiconductor information storage devices
JPS561567A (en) Manufacture of semiconductor device
GB1428742A (en) Semiconductor devices
JPS5326580A (en) Semiconductor unit
FR2207361A1 (en) Epitaxial growth of doped AIII-BV semiconductors - using a soln contg dopant, with reducing temp
IT1038567B (it) Dispositivo di protezione elettrica bidirezionale
IT1038566B (it) Dispositivo bidirezionale a stato solido e processo per lasua fabricazione
FR2183709A1 (en) Semiconductor resistance - in epitaxial layer buried below insulating layer, for high element density
ES392402A1 (es) Un dispositivo semiconductor.

Legal Events

Date Code Title Description
ST Notification of lapse