FR2255707B1 - - Google Patents

Info

Publication number
FR2255707B1
FR2255707B1 FR7500576A FR7500576A FR2255707B1 FR 2255707 B1 FR2255707 B1 FR 2255707B1 FR 7500576 A FR7500576 A FR 7500576A FR 7500576 A FR7500576 A FR 7500576A FR 2255707 B1 FR2255707 B1 FR 2255707B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7500576A
Other languages
French (fr)
Other versions
FR2255707A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2255707A1 publication Critical patent/FR2255707A1/fr
Application granted granted Critical
Publication of FR2255707B1 publication Critical patent/FR2255707B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P14/416—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H10P14/24—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
FR7500576A 1973-12-19 1975-01-09 Expired FR2255707B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US426396A US3900597A (en) 1973-12-19 1973-12-19 System and process for deposition of polycrystalline silicon with silane in vacuum

Publications (2)

Publication Number Publication Date
FR2255707A1 FR2255707A1 (enExample) 1975-07-18
FR2255707B1 true FR2255707B1 (enExample) 1978-06-23

Family

ID=23690641

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7500576A Expired FR2255707B1 (enExample) 1973-12-19 1975-01-09

Country Status (7)

Country Link
US (1) US3900597A (enExample)
JP (1) JPS5095185A (enExample)
CA (1) CA1047850A (enExample)
DE (1) DE2460211B2 (enExample)
FR (1) FR2255707B1 (enExample)
GB (1) GB1470614A (enExample)
HK (1) HK68380A (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539434A1 (de) * 1975-09-04 1977-03-17 Siemens Ag Vorrichtung zur rundumbeschichtung metallischer kleinteile
GB1518564A (en) * 1975-11-25 1978-07-19 Motorola Inc Method for the low pressure pyrolytic deposition of silicon nitride
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS584811B2 (ja) * 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
JPS55110032A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for high-frequency heated epitaxial growth
DE2907371C2 (de) * 1979-02-24 1981-03-12 Heraeus Quarzschmelze Gmbh, 6450 Hanau Hochtemperaturfestes Schutzrohr für Wärmebehandlung von Halbleiterbauelementen
US4228004A (en) * 1979-04-12 1980-10-14 Thermco Products Corporation Method and apparatus for removal of by-products of chemical vapor deposition from oil for vacuum pump
JPS55158623A (en) * 1979-05-29 1980-12-10 Hitachi Ltd Method of controlling semiconductor vapor phase growth
GB2049643B (en) * 1979-05-30 1983-07-20 Siemens Ag Process for the production of silicon having semiconducting proprties
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
US4315968A (en) * 1980-02-06 1982-02-16 Avco Corporation Silicon coated silicon carbide filaments and method
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
DD206687A3 (de) * 1981-07-28 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
JPS58172217A (ja) * 1982-03-31 1983-10-11 Toshiba Corp 多結晶シリコン膜の形成方法
US4547404A (en) * 1982-08-27 1985-10-15 Anicon, Inc. Chemical vapor deposition process
US4489103A (en) * 1983-09-16 1984-12-18 Rca Corporation SIPOS Deposition method
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
US4556584A (en) * 1984-05-03 1985-12-03 Btu Engineering Corporation Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4853669A (en) * 1985-04-26 1989-08-01 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
US5607511A (en) * 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US5298452A (en) * 1986-09-12 1994-03-29 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US5024972A (en) * 1990-01-29 1991-06-18 Motorola, Inc. Deposition of a conductive layer for contacts
US5181964A (en) * 1990-06-13 1993-01-26 International Business Machines Corporation Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
US5112773A (en) * 1991-04-10 1992-05-12 Micron Technology, Inc. Methods for texturizing polysilicon utilizing gas phase nucleation
JP3121131B2 (ja) * 1991-08-09 2000-12-25 アプライド マテリアルズ インコーポレイテッド 低温高圧のシリコン蒸着方法
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US5695819A (en) * 1991-08-09 1997-12-09 Applied Materials, Inc. Method of enhancing step coverage of polysilicon deposits
US5753559A (en) * 1996-01-16 1998-05-19 United Microelectronics Corporation Method for growing hemispherical grain silicon
EP1060287B1 (en) * 1998-03-06 2005-01-26 ASM America, Inc. Method of depositing silicon with high step coverage
US6479166B1 (en) 1998-10-06 2002-11-12 Case Western Reserve University Large area polysilicon films with predetermined stress characteristics and method for producing same
US6268068B1 (en) 1998-10-06 2001-07-31 Case Western Reserve University Low stress polysilicon film and method for producing same
RU2191847C2 (ru) * 2000-03-16 2002-10-27 Акционерное общество открытого типа "НИИ молекулярной электроники и завод "Микрон" Способ формирования слоев поликристаллического кремния
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US6957741B2 (en) * 2001-08-07 2005-10-25 Manfred Franz Axel Freissle Screening arrangement
RU2261937C2 (ru) * 2002-03-21 2005-10-10 Акционерное общество открытого типа "НИИ молекулярной электроники и завод "МИКРОН" (АООТ "НИИМЭ и завод "МИКРОН") Способ формирования слоев поликристаллического кремния
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
US20240102167A1 (en) * 2022-09-28 2024-03-28 California Institute Of Technology Novel coating method of complex 3d structures using low pressure chemical vapor deposition
CN115613007B (zh) * 2022-10-13 2024-10-01 上海中欣晶圆半导体科技有限公司 一种改善翘曲的成膜方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3446936A (en) * 1966-01-03 1969-05-27 Sperry Rand Corp Evaporant source
DE1614893C3 (de) * 1967-11-28 1979-08-09 Telefunken Patentverwertungs Gmbh, 7900 Ulm Verfahren zum Verbessern und Stabilisieren des Kennlinienverlaufes eines Halbleiterbaueiementes und Anwendungen hiervon
JPS509471B1 (enExample) * 1968-10-25 1975-04-12
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
JPS5311051B2 (enExample) * 1973-06-29 1978-04-19

Also Published As

Publication number Publication date
GB1470614A (en) 1977-04-14
JPS5095185A (enExample) 1975-07-29
FR2255707A1 (enExample) 1975-07-18
DE2460211B2 (de) 1979-05-23
CA1047850A (en) 1979-02-06
HK68380A (en) 1980-12-12
US3900597A (en) 1975-08-19
DE2460211A1 (de) 1975-11-06

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