FR2246979A1 - - Google Patents

Info

Publication number
FR2246979A1
FR2246979A1 FR7433317A FR7433317A FR2246979A1 FR 2246979 A1 FR2246979 A1 FR 2246979A1 FR 7433317 A FR7433317 A FR 7433317A FR 7433317 A FR7433317 A FR 7433317A FR 2246979 A1 FR2246979 A1 FR 2246979A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7433317A
Other versions
FR2246979B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2246979A1 publication Critical patent/FR2246979A1/fr
Application granted granted Critical
Publication of FR2246979B1 publication Critical patent/FR2246979B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
FR7433317A 1973-10-03 1974-10-03 Expired FR2246979B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7313572A NL7313572A (nl) 1973-10-03 1973-10-03 Werkwijze voor het etsen van silicium- of ger- mplakken en halfgeleiderinrichtingen ver- igd met toepassing van deze werkwijze.

Publications (2)

Publication Number Publication Date
FR2246979A1 true FR2246979A1 (fr) 1975-05-02
FR2246979B1 FR2246979B1 (fr) 1978-06-16

Family

ID=19819730

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7433317A Expired FR2246979B1 (fr) 1973-10-03 1974-10-03

Country Status (8)

Country Link
US (1) US3966517A (fr)
JP (1) JPS5062775A (fr)
CA (1) CA1009769A (fr)
DE (1) DE2445882C2 (fr)
FR (1) FR2246979B1 (fr)
GB (1) GB1469013A (fr)
IT (1) IT1022491B (fr)
NL (1) NL7313572A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0758797A1 (fr) * 1995-08-11 1997-02-19 AT&T Corp. Procédé d'attaque du nitrure de silicium
EP1178526A2 (fr) * 2000-07-31 2002-02-06 Mitsubishi Chemical Corporation Solution de gravure à base de mélange d'acides, procédé de préparation de ladite solution, procédé de gravure utilisant ladite solution et procédé de fabrication d'un composant semiconducteur

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
US4078945A (en) * 1976-05-03 1978-03-14 Mobil Tyco Solar Energy Corporation Anti-reflective coating for silicon solar cells
US4092211A (en) * 1976-11-18 1978-05-30 Northern Telecom Limited Control of etch rate of silicon dioxide in boiling phosphoric acid
US4615762A (en) * 1985-04-30 1986-10-07 Rca Corporation Method for thinning silicon
US5348617A (en) * 1991-12-23 1994-09-20 Iowa State University Research Foundation, Inc. Selective etching process
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5843322A (en) * 1996-12-23 1998-12-01 Memc Electronic Materials, Inc. Process for etching N, P, N+ and P+ type slugs and wafers
DE19721493A1 (de) * 1997-05-22 1998-11-26 Wacker Siltronic Halbleitermat Verfahren zum Ätzen von Halbleiterscheiben
KR100652788B1 (ko) * 2004-10-26 2006-12-01 다이닛뽕스크린 세이조오 가부시키가이샤 웨이퍼 처리장치 및 웨이퍼 처리방법
EP1926132A1 (fr) * 2006-11-23 2008-05-28 S.O.I.Tec Silicon on Insulator Technologies Solution de gravure sans chrome pour substrats Si et SiGe, procédé de révélation de défauts et procédé de traitement de substrats Si ou SiGe
DE102014013591A1 (de) 2014-09-13 2016-03-17 Jörg Acker Verfahren zur Herstellung von Siliciumoberflächen mit niedriger Reflektivität
CN114316990B (zh) * 2021-12-09 2023-04-07 湖北兴福电子材料股份有限公司 一种高蚀刻锥角的锗蚀刻液

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3762973A (en) * 1969-04-01 1973-10-02 Gen Electric Method of etch subdividing semiconductor wafers
US3844859A (en) * 1969-12-16 1974-10-29 Boeing Co Titanium chemical milling etchant
US3677848A (en) * 1970-07-15 1972-07-18 Rca Corp Method and material for etching semiconductor bodies
US3716425A (en) * 1970-08-24 1973-02-13 Motorola Inc Method of making semiconductor devices through overlapping diffusions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0758797A1 (fr) * 1995-08-11 1997-02-19 AT&T Corp. Procédé d'attaque du nitrure de silicium
EP1178526A2 (fr) * 2000-07-31 2002-02-06 Mitsubishi Chemical Corporation Solution de gravure à base de mélange d'acides, procédé de préparation de ladite solution, procédé de gravure utilisant ladite solution et procédé de fabrication d'un composant semiconducteur
EP1178526A3 (fr) * 2000-07-31 2004-03-03 Mitsubishi Chemical Corporation Solution de gravure à base de mélange d'acides, procédé de préparation de ladite solution, procédé de gravure utilisant ladite solution et procédé de fabrication d'un composant semiconducteur

Also Published As

Publication number Publication date
DE2445882A1 (de) 1975-04-17
GB1469013A (en) 1977-03-30
IT1022491B (it) 1978-03-20
JPS5062775A (fr) 1975-05-28
CA1009769A (en) 1977-05-03
NL7313572A (nl) 1975-04-07
FR2246979B1 (fr) 1978-06-16
US3966517A (en) 1976-06-29
DE2445882C2 (de) 1983-12-29

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Legal Events

Date Code Title Description
ST Notification of lapse