FR2241141B1 - - Google Patents

Info

Publication number
FR2241141B1
FR2241141B1 FR7428093A FR7428093A FR2241141B1 FR 2241141 B1 FR2241141 B1 FR 2241141B1 FR 7428093 A FR7428093 A FR 7428093A FR 7428093 A FR7428093 A FR 7428093A FR 2241141 B1 FR2241141 B1 FR 2241141B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7428093A
Other versions
FR2241141A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2241141A1 publication Critical patent/FR2241141A1/fr
Application granted granted Critical
Publication of FR2241141B1 publication Critical patent/FR2241141B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
FR7428093A 1973-08-16 1974-08-13 Expired FR2241141B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2341311A DE2341311C3 (de) 1973-08-16 1973-08-16 Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern

Publications (2)

Publication Number Publication Date
FR2241141A1 FR2241141A1 (fr) 1975-03-14
FR2241141B1 true FR2241141B1 (fr) 1979-03-09

Family

ID=5889846

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7428093A Expired FR2241141B1 (fr) 1973-08-16 1974-08-13

Country Status (5)

Country Link
US (1) US3953243A (fr)
JP (1) JPS5046480A (fr)
DE (1) DE2341311C3 (fr)
FR (1) FR2241141B1 (fr)
GB (1) GB1455368A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406301A1 (fr) * 1977-10-17 1979-05-11 Silicium Semiconducteur Ssc Procede de fabrication de dispositifs semi-conducteurs rapides
US4203780A (en) * 1978-08-23 1980-05-20 Sony Corporation Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature
US5528058A (en) * 1986-03-21 1996-06-18 Advanced Power Technology, Inc. IGBT device with platinum lifetime control and reduced gaw
US5283202A (en) * 1986-03-21 1994-02-01 Advanced Power Technology, Inc. IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
US4990466A (en) * 1988-11-01 1991-02-05 Siemens Corporate Research, Inc. Method for fabricating index-guided semiconductor laser
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component
IT1244119B (it) * 1990-11-29 1994-07-05 Cons Ric Microelettronica Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
DE4421529C2 (de) * 1994-06-20 1996-04-18 Semikron Elektronik Gmbh Schnelle Leistungsdiode
GB9509301D0 (en) * 1995-05-06 1995-06-28 Atomic Energy Authority Uk An improved process for the production of semi-conductor devices
US5859465A (en) * 1996-10-15 1999-01-12 International Rectifier Corporation High voltage power schottky with aluminum barrier metal spaced from first diffused ring
KR100342073B1 (ko) * 2000-03-29 2002-07-02 조중열 반도체 소자의 제조 방법
US9209027B1 (en) 2014-08-14 2015-12-08 Infineon Technologies Ag Adjusting the charge carrier lifetime in a bipolar semiconductor device
US9349799B2 (en) * 2014-08-14 2016-05-24 Infineon Technologies Ag Adjusting the charge carrier lifetime in a bipolar semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (fr) * 1958-08-13 1900-01-01
NL252132A (fr) * 1959-06-30
US3473976A (en) * 1966-03-31 1969-10-21 Ibm Carrier lifetime killer doping process for semiconductor structures and the product formed thereby
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
US3749610A (en) * 1971-01-11 1973-07-31 Itt Production of silicon insulated gate and ion implanted field effect transistor

Also Published As

Publication number Publication date
DE2341311A1 (de) 1975-03-20
US3953243A (en) 1976-04-27
DE2341311B2 (de) 1977-08-11
DE2341311C3 (de) 1981-07-09
JPS5046480A (fr) 1975-04-25
GB1455368A (en) 1976-11-10
FR2241141A1 (fr) 1975-03-14

Similar Documents

Publication Publication Date Title
AU476761B2 (fr)
AR201235Q (fr)
AR201231Q (fr)
FR2241141B1 (fr)
AU450229B2 (fr)
AU476714B2 (fr)
AR201229Q (fr)
AU476696B2 (fr)
AR199451A1 (fr)
AU477823B2 (fr)
AR193950A1 (fr)
AU476873B1 (fr)
AR195311A1 (fr)
AU477824B2 (fr)
AR200885A1 (fr)
AR200256A1 (fr)
AU461342B2 (fr)
AU447540B2 (fr)
AR197627A1 (fr)
AR195948A1 (fr)
AR196382A1 (fr)
AR196212Q (fr)
AR196123Q (fr)
AU481575A (fr)
AU479504A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse