FR2220082A1 - - Google Patents

Info

Publication number
FR2220082A1
FR2220082A1 FR7406924A FR7406924A FR2220082A1 FR 2220082 A1 FR2220082 A1 FR 2220082A1 FR 7406924 A FR7406924 A FR 7406924A FR 7406924 A FR7406924 A FR 7406924A FR 2220082 A1 FR2220082 A1 FR 2220082A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7406924A
Other versions
FR2220082B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2220082A1 publication Critical patent/FR2220082A1/fr
Application granted granted Critical
Publication of FR2220082B1 publication Critical patent/FR2220082B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR7406924A 1973-03-01 1974-02-28 Expired FR2220082B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33691673A 1973-03-01 1973-03-01
US413865A US3877054A (en) 1973-03-01 1973-11-08 Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor

Publications (2)

Publication Number Publication Date
FR2220082A1 true FR2220082A1 (fr) 1974-09-27
FR2220082B1 FR2220082B1 (fr) 1977-09-16

Family

ID=26990451

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7406924A Expired FR2220082B1 (fr) 1973-03-01 1974-02-28

Country Status (10)

Country Link
US (1) US3877054A (fr)
JP (1) JPS5716745B2 (fr)
CA (1) CA1028425A (fr)
DE (1) DE2409568C2 (fr)
FR (1) FR2220082B1 (fr)
GB (1) GB1457780A (fr)
HK (1) HK46077A (fr)
IT (1) IT1009192B (fr)
NL (1) NL7402733A (fr)
SE (1) SE398686B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964085A (en) * 1975-08-18 1976-06-15 Bell Telephone Laboratories, Incorporated Method for fabricating multilayer insulator-semiconductor memory apparatus
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
US4056807A (en) * 1976-08-16 1977-11-01 Bell Telephone Laboratories, Incorporated Electronically alterable diode logic circuit
US4384299A (en) * 1976-10-29 1983-05-17 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
GB1596184A (en) * 1976-11-27 1981-08-19 Fujitsu Ltd Method of manufacturing semiconductor devices
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel
DE2845328C2 (de) * 1978-10-18 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Speichertransistor
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6804136B2 (en) * 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US7193893B2 (en) * 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6996009B2 (en) * 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US7154140B2 (en) * 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6970370B2 (en) * 2002-06-21 2005-11-29 Micron Technology, Inc. Ferroelectric write once read only memory for archival storage
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US7847344B2 (en) 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP4940264B2 (ja) * 2009-04-27 2012-05-30 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US9362376B2 (en) 2011-11-23 2016-06-07 Acorn Technologies, Inc. Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
JP2013197121A (ja) * 2012-03-15 2013-09-30 Toshiba Corp 半導体装置及びその製造方法
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
JPS497870B1 (fr) * 1969-06-06 1974-02-22
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
JPS5341513B2 (fr) * 1971-03-26 1978-11-04
US3805130A (en) * 1970-10-27 1974-04-16 S Yamazaki Semiconductor device

Also Published As

Publication number Publication date
JPS5716745B2 (fr) 1982-04-07
CA1028425A (fr) 1978-03-21
DE2409568A1 (de) 1974-09-12
HK46077A (en) 1977-09-16
FR2220082B1 (fr) 1977-09-16
US3877054A (en) 1975-04-08
DE2409568C2 (de) 1982-09-02
IT1009192B (it) 1976-12-10
JPS49126284A (fr) 1974-12-03
NL7402733A (fr) 1974-09-03
GB1457780A (en) 1976-12-08
SE398686B (sv) 1978-01-09

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Legal Events

Date Code Title Description
ST Notification of lapse