SE398686B - Minnes-struktur - Google Patents
Minnes-strukturInfo
- Publication number
- SE398686B SE398686B SE7402116A SE7402116A SE398686B SE 398686 B SE398686 B SE 398686B SE 7402116 A SE7402116 A SE 7402116A SE 7402116 A SE7402116 A SE 7402116A SE 398686 B SE398686 B SE 398686B
- Authority
- SE
- Sweden
- Prior art keywords
- memory structure
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33691673A | 1973-03-01 | 1973-03-01 | |
| US413865A US3877054A (en) | 1973-03-01 | 1973-11-08 | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE398686B true SE398686B (sv) | 1978-01-09 |
Family
ID=26990451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7402116A SE398686B (sv) | 1973-03-01 | 1974-02-18 | Minnes-struktur |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3877054A (xx) |
| JP (1) | JPS5716745B2 (xx) |
| CA (1) | CA1028425A (xx) |
| DE (1) | DE2409568C2 (xx) |
| FR (1) | FR2220082B1 (xx) |
| GB (1) | GB1457780A (xx) |
| HK (1) | HK46077A (xx) |
| IT (1) | IT1009192B (xx) |
| NL (1) | NL7402733A (xx) |
| SE (1) | SE398686B (xx) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3964085A (en) * | 1975-08-18 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Method for fabricating multilayer insulator-semiconductor memory apparatus |
| US4047974A (en) * | 1975-12-30 | 1977-09-13 | Hughes Aircraft Company | Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states |
| US4056807A (en) * | 1976-08-16 | 1977-11-01 | Bell Telephone Laboratories, Incorporated | Electronically alterable diode logic circuit |
| US4384299A (en) * | 1976-10-29 | 1983-05-17 | Massachusetts Institute Of Technology | Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
| GB1596184A (en) * | 1976-11-27 | 1981-08-19 | Fujitsu Ltd | Method of manufacturing semiconductor devices |
| US4163985A (en) * | 1977-09-30 | 1979-08-07 | The United States Of America As Represented By The Secretary Of The Air Force | Nonvolatile punch through memory cell with buried n+ region in channel |
| DE2845328C2 (de) * | 1978-10-18 | 1986-04-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Speichertransistor |
| US6953730B2 (en) * | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
| US6996009B2 (en) | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
| US6888739B2 (en) | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
| US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
| US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
| US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
| US7193893B2 (en) * | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
| US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
| US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| JP4940264B2 (ja) * | 2009-04-27 | 2012-05-30 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
| WO2013077954A1 (en) | 2011-11-23 | 2013-05-30 | Acorn Technologies, Inc. | Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers |
| JP2013197121A (ja) * | 2012-03-15 | 2013-09-30 | Toshiba Corp | 半導体装置及びその製造方法 |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| JPS497870B1 (xx) * | 1969-06-06 | 1974-02-22 | ||
| BE756782A (fr) * | 1969-10-03 | 1971-03-01 | Western Electric Co | Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal |
| JPS5341513B2 (xx) * | 1971-03-26 | 1978-11-04 | ||
| US3805130A (en) * | 1970-10-27 | 1974-04-16 | S Yamazaki | Semiconductor device |
-
1973
- 1973-11-08 US US413865A patent/US3877054A/en not_active Expired - Lifetime
-
1974
- 1974-01-25 CA CA190,936A patent/CA1028425A/en not_active Expired
- 1974-02-18 SE SE7402116A patent/SE398686B/xx not_active IP Right Cessation
- 1974-02-28 DE DE2409568A patent/DE2409568C2/de not_active Expired
- 1974-02-28 NL NL7402733A patent/NL7402733A/xx not_active Application Discontinuation
- 1974-02-28 JP JP2295074A patent/JPS5716745B2/ja not_active Expired
- 1974-02-28 FR FR7406924A patent/FR2220082B1/fr not_active Expired
- 1974-03-01 GB GB925674A patent/GB1457780A/en not_active Expired
- 1974-03-06 IT IT67558/74A patent/IT1009192B/it active
-
1977
- 1977-09-08 HK HK460/77A patent/HK46077A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS49126284A (xx) | 1974-12-03 |
| DE2409568C2 (de) | 1982-09-02 |
| FR2220082B1 (xx) | 1977-09-16 |
| HK46077A (en) | 1977-09-16 |
| IT1009192B (it) | 1976-12-10 |
| JPS5716745B2 (xx) | 1982-04-07 |
| DE2409568A1 (de) | 1974-09-12 |
| NL7402733A (xx) | 1974-09-03 |
| CA1028425A (en) | 1978-03-21 |
| US3877054A (en) | 1975-04-08 |
| FR2220082A1 (xx) | 1974-09-27 |
| GB1457780A (en) | 1976-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 7402116-3 Effective date: 19900130 Format of ref document f/p: F |