FR2197236A1 - - Google Patents
Info
- Publication number
- FR2197236A1 FR2197236A1 FR7330636A FR7330636A FR2197236A1 FR 2197236 A1 FR2197236 A1 FR 2197236A1 FR 7330636 A FR7330636 A FR 7330636A FR 7330636 A FR7330636 A FR 7330636A FR 2197236 A1 FR2197236 A1 FR 2197236A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US283131A US3881179A (en) | 1972-08-23 | 1972-08-23 | Zener diode structure having three terminals |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2197236A1 true FR2197236A1 (fr) | 1974-03-22 |
Family
ID=23084670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7330636A Withdrawn FR2197236A1 (fr) | 1972-08-23 | 1973-08-23 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3881179A (fr) |
JP (1) | JPS4947084A (fr) |
DE (1) | DE2342637A1 (fr) |
FR (1) | FR2197236A1 (fr) |
GB (1) | GB1402376A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2536212A1 (fr) * | 1982-11-12 | 1984-05-18 | Burr Brown Res Corp | Diode zener ou a avalanche enterree a faible tension et procede de fabrication |
FR2598259A1 (fr) * | 1986-05-05 | 1987-11-06 | Burr Brown Corp | Diode zener enterree et procede de fabrication. |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4030117A (en) * | 1975-03-10 | 1977-06-14 | International Telephone And Telegraph Corporation | Zener diode |
US4017882A (en) * | 1975-12-15 | 1977-04-12 | Rca Corporation | Transistor having integrated protection |
US4177095A (en) * | 1977-02-25 | 1979-12-04 | National Semiconductor Corporation | Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps |
US4127859A (en) * | 1977-02-25 | 1978-11-28 | National Semiconductor Corporation | Integrated circuit subsurface zener diode |
US4136349A (en) * | 1977-05-27 | 1979-01-23 | Analog Devices, Inc. | Ic chip with buried zener diode |
US4213806A (en) * | 1978-10-05 | 1980-07-22 | Analog Devices, Incorporated | Forming an IC chip with buried zener diode |
JPS5676560A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor device |
DE3004680A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer integrierten schaltungsanordnung |
DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
EP0054303B1 (fr) * | 1980-12-17 | 1986-06-11 | Matsushita Electric Industrial Co., Ltd. | Semiconducteur à circuit intégré |
US4405933A (en) * | 1981-02-04 | 1983-09-20 | Rca Corporation | Protective integrated circuit device utilizing back-to-back zener diodes |
US4398142A (en) * | 1981-10-09 | 1983-08-09 | Harris Corporation | Kelvin-connected buried zener voltage reference circuit |
US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
US4742021A (en) * | 1985-05-05 | 1988-05-03 | Burr-Brown Corporation | Subsurface zener diode and method of making |
US4631562A (en) * | 1985-05-31 | 1986-12-23 | Rca Corporation | Zener diode structure |
US4651178A (en) * | 1985-05-31 | 1987-03-17 | Rca Corporation | Dual inverse zener diode with buried junctions |
JPH07101999B2 (ja) * | 1985-07-23 | 1995-11-01 | 松下電器産業株式会社 | フアンモ−タ制御装置 |
US4758537A (en) * | 1985-09-23 | 1988-07-19 | National Semiconductor Corporation | Lateral subsurface zener diode making process |
US4672403A (en) * | 1985-09-23 | 1987-06-09 | National Semiconductor Corporation | Lateral subsurface zener diode |
US5179030A (en) * | 1991-04-26 | 1993-01-12 | Unitrode Corporation | Method of fabricating a buried zener diode simultaneously with other semiconductor devices |
US5786722A (en) * | 1996-11-12 | 1998-07-28 | Xerox Corporation | Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node |
JP4149109B2 (ja) * | 2000-01-28 | 2008-09-10 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
US7388271B2 (en) * | 2005-07-01 | 2008-06-17 | Texas Instruments Incorporated | Schottky diode with minimal vertical current flow |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3304470A (en) * | 1963-03-14 | 1967-02-14 | Nippon Electric Co | Negative resistance semiconductor device utilizing tunnel effect |
US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
US3699406A (en) * | 1963-12-26 | 1972-10-17 | Gen Electric | Semiconductor gate-controlled pnpn switch |
US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
US3341380A (en) * | 1964-12-28 | 1967-09-12 | Gen Electric | Method of producing semiconductor devices |
US3396317A (en) * | 1965-11-30 | 1968-08-06 | Texas Instruments Inc | Surface-oriented high frequency diode |
US3402325A (en) * | 1966-02-21 | 1968-09-17 | Brunswick Corp | Alternator having overvoltage protection means connected to essentially short circuit the alternator |
DE1300164B (de) * | 1967-01-26 | 1969-07-31 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von Zenerdioden |
US3555374A (en) * | 1967-03-03 | 1971-01-12 | Hitachi Ltd | Field effect semiconductor device having a protective diode |
DE1537455C3 (de) * | 1967-07-20 | 1973-10-18 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Zur wahlweisen Durchfuhrung der NOR oder Äquivalenz Funktion umschalt bares Verknüpfungsglied |
US3517280A (en) * | 1967-10-17 | 1970-06-23 | Ibm | Four layer diode device insensitive to rate effect and method of manufacture |
DE1589707B2 (de) * | 1967-12-09 | 1971-02-04 | Deutsche ITT Industries GmbH 7800 Freiburg | Temperaturkompensierte Z Diodenanord nung |
US3502951A (en) * | 1968-01-02 | 1970-03-24 | Singer Co | Monolithic complementary semiconductor device |
DE1764398B1 (de) * | 1968-05-30 | 1971-02-04 | Itt Ind Gmbh Deutsche | Sperrschichtkondensator |
DE1764556C3 (de) * | 1968-06-26 | 1979-01-04 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente |
US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
US3542551A (en) * | 1968-07-01 | 1970-11-24 | Trw Semiconductors Inc | Method of etching patterns into solid state devices |
GB1280022A (en) * | 1968-08-30 | 1972-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US3663872A (en) * | 1969-01-22 | 1972-05-16 | Nippon Electric Co | Integrated circuit lateral transistor |
-
1972
- 1972-08-23 US US283131A patent/US3881179A/en not_active Expired - Lifetime
-
1973
- 1973-07-06 GB GB3232673A patent/GB1402376A/en not_active Expired
- 1973-07-30 JP JP48085041A patent/JPS4947084A/ja active Pending
- 1973-08-23 DE DE19732342637 patent/DE2342637A1/de active Pending
- 1973-08-23 FR FR7330636A patent/FR2197236A1/fr not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2536212A1 (fr) * | 1982-11-12 | 1984-05-18 | Burr Brown Res Corp | Diode zener ou a avalanche enterree a faible tension et procede de fabrication |
FR2598259A1 (fr) * | 1986-05-05 | 1987-11-06 | Burr Brown Corp | Diode zener enterree et procede de fabrication. |
Also Published As
Publication number | Publication date |
---|---|
DE2342637A1 (de) | 1974-03-21 |
GB1402376A (en) | 1975-08-06 |
JPS4947084A (fr) | 1974-05-07 |
US3881179A (en) | 1975-04-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |