FR2176999A1 - - Google Patents

Info

Publication number
FR2176999A1
FR2176999A1 FR7310134A FR7310134A FR2176999A1 FR 2176999 A1 FR2176999 A1 FR 2176999A1 FR 7310134 A FR7310134 A FR 7310134A FR 7310134 A FR7310134 A FR 7310134A FR 2176999 A1 FR2176999 A1 FR 2176999A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7310134A
Other languages
French (fr)
Other versions
FR2176999B1 (US20080094685A1-20080424-C00004.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00237060A external-priority patent/US3808072A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2176999A1 publication Critical patent/FR2176999A1/fr
Application granted granted Critical
Publication of FR2176999B1 publication Critical patent/FR2176999B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • H01L21/30621Vapour phase etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02463Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
FR7310134A 1972-03-22 1973-03-21 Expired FR2176999B1 (US20080094685A1-20080424-C00004.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US00237060A US3808072A (en) 1972-03-22 1972-03-22 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US24931172A 1972-05-01 1972-05-01

Publications (2)

Publication Number Publication Date
FR2176999A1 true FR2176999A1 (US20080094685A1-20080424-C00004.png) 1973-11-02
FR2176999B1 FR2176999B1 (US20080094685A1-20080424-C00004.png) 1978-03-03

Family

ID=26930348

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7310134A Expired FR2176999B1 (US20080094685A1-20080424-C00004.png) 1972-03-22 1973-03-21
FR7310133A Expired FR2176998B1 (US20080094685A1-20080424-C00004.png) 1972-03-22 1973-03-21

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7310133A Expired FR2176998B1 (US20080094685A1-20080424-C00004.png) 1972-03-22 1973-03-21

Country Status (6)

Country Link
JP (2) JPS5232831B2 (US20080094685A1-20080424-C00004.png)
FR (2) FR2176999B1 (US20080094685A1-20080424-C00004.png)
GB (2) GB1425102A (US20080094685A1-20080424-C00004.png)
IT (2) IT979892B (US20080094685A1-20080424-C00004.png)
NL (2) NL160989C (US20080094685A1-20080424-C00004.png)
SE (2) SE375557B (US20080094685A1-20080424-C00004.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244582A (en) * 1975-10-06 1977-04-07 New Japan Radio Co Ltd Semiconductor device and process for production of the same
JPS55114620A (en) * 1979-02-22 1980-09-04 Yoshio Kaneda Driver's cab on tractor or the like
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor
JPS5770810A (en) * 1980-10-17 1982-05-01 Lion Corp Cosmetic for hair
JPS60222410A (ja) * 1984-04-20 1985-11-07 Asahi Denka Kogyo Kk シヤンプ−組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (US20080094685A1-20080424-C00004.png) * 1972-06-06 1974-02-13

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
10 N 8, JANVIER 1968 'VAPOR ETCHING OF GALLIUM ARSENIDE' A.E.BLAKESLEE ET AL, PAGE 1326 *
LE 3-7 OCTOBRE 1971 *
MILLIMETER WAVE GEAR', PAGES 8E-9E *
PAGES 541-544. *
R.D.FAIRMAN ET AL, COMMUNICATION N 193RNP PRESENTEE AU 'MEETING OF THE ELECTROCHEMICAL SOCIETY' *
REVUE AMERICAINE 'ELECTRONICS', VOLUME 45, N 2, JANVIER 1972 'PLANAR SCHOTTKY DIODES FOR QUASI *
REVUE AMERICAINE 'IBM TECHNICAL DISCLOSURE BULLETIN', VOL. *
REVUE AMERICAINE 'JOURNAL OF THE ELECTROCHEMICAL SOCIETY' *
REVUE AMERICAINE 'PROCEEDINGS OF THE IEEE', VOLUME 59, N 7, JUILLET 1971 'GAAS SCHOTTKY DIODES *
VOLUME 120, N 4, AVRIL 1973 'SUBMICRON EPITAXIAL FILMS FOR GA AS FIELD EFFECT TRANSISTORS', *
WITH NEAR-IDEAL CHARACTERISTICS', D.J.COLEMAN, JR ET AL, PAGES 1121-1122) *

Also Published As

Publication number Publication date
GB1425102A (en) 1976-02-18
JPS5433711B2 (US20080094685A1-20080424-C00004.png) 1979-10-22
IT982897B (it) 1974-10-21
SE375557B (US20080094685A1-20080424-C00004.png) 1975-04-21
IT979892B (it) 1974-09-30
FR2176998A1 (US20080094685A1-20080424-C00004.png) 1973-11-02
NL160989C (nl) 1979-12-17
NL7303958A (US20080094685A1-20080424-C00004.png) 1973-09-25
DE2313768A1 (de) 1973-10-04
JPS5019367A (US20080094685A1-20080424-C00004.png) 1975-02-28
NL160989B (nl) 1979-07-16
NL162313C (nl) 1980-05-16
FR2176998B1 (US20080094685A1-20080424-C00004.png) 1976-11-05
NL162313B (nl) 1979-12-17
JPS5232831B2 (US20080094685A1-20080424-C00004.png) 1977-08-24
NL7303954A (US20080094685A1-20080424-C00004.png) 1973-09-25
DE2313768B2 (de) 1975-11-20
FR2176999B1 (US20080094685A1-20080424-C00004.png) 1978-03-03
GB1425101A (en) 1976-02-18
SE388972B (sv) 1976-10-18
JPS4948281A (US20080094685A1-20080424-C00004.png) 1974-05-10

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Legal Events

Date Code Title Description
ST Notification of lapse