FR2172232A1 - Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting - Google Patents
Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone meltingInfo
- Publication number
- FR2172232A1 FR2172232A1 FR7305202A FR7305202A FR2172232A1 FR 2172232 A1 FR2172232 A1 FR 2172232A1 FR 7305202 A FR7305202 A FR 7305202A FR 7305202 A FR7305202 A FR 7305202A FR 2172232 A1 FR2172232 A1 FR 2172232A1
- Authority
- FR
- France
- Prior art keywords
- soln
- zone
- gallium
- indium
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 239000004411 aluminium Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 229910052738 indium Inorganic materials 0.000 title 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
- 238000004857 zone melting Methods 0.000 title 1
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22693572A | 1972-02-16 | 1972-02-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2172232A1 true FR2172232A1 (en) | 1973-09-28 |
| FR2172232B3 FR2172232B3 (enrdf_load_html_response) | 1976-02-13 |
Family
ID=22851074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7305202A Granted FR2172232A1 (en) | 1972-02-16 | 1973-02-14 | Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4890678A (enrdf_load_html_response) |
| DE (1) | DE2307510A1 (enrdf_load_html_response) |
| FR (1) | FR2172232A1 (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590596A1 (fr) * | 1985-11-22 | 1987-05-29 | Cominco Ltd | Procede de purification de cadmium et de tellure. |
-
1973
- 1973-02-14 FR FR7305202A patent/FR2172232A1/fr active Granted
- 1973-02-15 JP JP1883173A patent/JPS4890678A/ja active Pending
- 1973-02-15 DE DE19732307510 patent/DE2307510A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590596A1 (fr) * | 1985-11-22 | 1987-05-29 | Cominco Ltd | Procede de purification de cadmium et de tellure. |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4890678A (enrdf_load_html_response) | 1973-11-26 |
| DE2307510A1 (de) | 1973-10-04 |
| FR2172232B3 (enrdf_load_html_response) | 1976-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |