FR2172232B3 - - Google Patents

Info

Publication number
FR2172232B3
FR2172232B3 FR7305202A FR7305202A FR2172232B3 FR 2172232 B3 FR2172232 B3 FR 2172232B3 FR 7305202 A FR7305202 A FR 7305202A FR 7305202 A FR7305202 A FR 7305202A FR 2172232 B3 FR2172232 B3 FR 2172232B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7305202A
Other languages
French (fr)
Other versions
FR2172232A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Atomic Energy Commission (AEC)
Original Assignee
US Atomic Energy Commission (AEC)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Atomic Energy Commission (AEC) filed Critical US Atomic Energy Commission (AEC)
Publication of FR2172232A1 publication Critical patent/FR2172232A1/fr
Application granted granted Critical
Publication of FR2172232B3 publication Critical patent/FR2172232B3/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02Zone-melting with a solvent, e.g. travelling solvent process

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7305202A 1972-02-16 1973-02-14 Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting Granted FR2172232A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22693572A 1972-02-16 1972-02-16

Publications (2)

Publication Number Publication Date
FR2172232A1 FR2172232A1 (en) 1973-09-28
FR2172232B3 true FR2172232B3 (enrdf_load_html_response) 1976-02-13

Family

ID=22851074

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7305202A Granted FR2172232A1 (en) 1972-02-16 1973-02-14 Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting

Country Status (3)

Country Link
JP (1) JPS4890678A (enrdf_load_html_response)
DE (1) DE2307510A1 (enrdf_load_html_response)
FR (1) FR2172232A1 (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690725A (en) * 1985-11-22 1987-09-01 Cominco Ltd. Purification of Cd and Te by zone refining

Also Published As

Publication number Publication date
JPS4890678A (enrdf_load_html_response) 1973-11-26
DE2307510A1 (de) 1973-10-04
FR2172232A1 (en) 1973-09-28

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Legal Events

Date Code Title Description
ST Notification of lapse