FR2159339A1 - - Google Patents

Info

Publication number
FR2159339A1
FR2159339A1 FR7239404A FR7239404A FR2159339A1 FR 2159339 A1 FR2159339 A1 FR 2159339A1 FR 7239404 A FR7239404 A FR 7239404A FR 7239404 A FR7239404 A FR 7239404A FR 2159339 A1 FR2159339 A1 FR 2159339A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7239404A
Other versions
FR2159339B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of FR2159339A1 publication Critical patent/FR2159339A1/fr
Application granted granted Critical
Publication of FR2159339B1 publication Critical patent/FR2159339B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
FR7239404A 1971-11-08 1972-11-07 Expired FR2159339B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00196449A US3846082A (en) 1971-11-08 1971-11-08 Production of crystalline bodies of complex geometries

Publications (2)

Publication Number Publication Date
FR2159339A1 true FR2159339A1 (fr) 1973-06-22
FR2159339B1 FR2159339B1 (fr) 1977-07-29

Family

ID=22725468

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7239404A Expired FR2159339B1 (fr) 1971-11-08 1972-11-07

Country Status (11)

Country Link
US (1) US3846082A (fr)
JP (1) JPS5215075B2 (fr)
BE (1) BE791024A (fr)
BR (1) BR7207786D0 (fr)
CA (1) CA974859A (fr)
CH (1) CH576283A5 (fr)
DE (1) DE2254616C3 (fr)
FR (1) FR2159339B1 (fr)
GB (1) GB1382529A (fr)
IT (1) IT973428B (fr)
NL (1) NL7215097A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0653504A1 (fr) * 1993-11-16 1995-05-17 Commissariat A L'energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
JPS55144338A (en) * 1979-03-20 1980-11-11 Aida Eng Ltd Transfer driving device
US4612972A (en) * 1982-01-04 1986-09-23 Olin Corporation Method and apparatus for electro-magnetic casting of complex shapes
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
WO1988007598A1 (fr) * 1987-03-27 1988-10-06 Mobil Solar Energy Corporation Dispositif et procede de croissance de cristaux par alimentation de couche avec controle de surface
US5346883A (en) * 1987-08-21 1994-09-13 The Furukawa Electric Co., Ltd. Method of manufacturing superconductive products
EP0608213A1 (fr) * 1990-07-10 1994-08-03 Saphikon, Inc. Appareil utilise dans la croissance de corps cristallins creux a partir d'un bain de fusion
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
AU9034491A (en) * 1990-08-15 1992-03-17 Mobil Solar Energy Corporation Method of growing cylindrical tubular crystalline bodies
US5266151A (en) * 1992-03-04 1993-11-30 Advanced Crystal Products Corporation Inside edge defined, self-filling (IESF) die for crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
US6722873B2 (en) * 2001-09-10 2004-04-20 Recot, Inc. Apparatus for producing a curly puff extrudate
US20050034581A1 (en) * 2003-08-12 2005-02-17 Eugenio Bortone Method and apparatus for cutting a curly puff extrudate
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
CN101194141B (zh) * 2005-06-10 2013-05-22 圣戈本陶瓷及塑料股份有限公司 透明陶瓷复合物及其制造方法
KR101353277B1 (ko) * 2006-09-22 2014-01-22 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 C-플레인 단결정 사파이어 재료의 형성 방법
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
RU2451117C2 (ru) * 2010-06-09 2012-05-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Устройство для выращивания профилированных кристаллов в виде полых тел вращения
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (de) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244873A (fr) * 1958-11-17
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
NL238924A (fr) * 1959-05-05
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
BE638262A (fr) * 1962-10-18
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
DE1519897B2 (de) * 1966-08-06 1974-07-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
DE1935372C3 (de) * 1969-07-11 1980-06-19 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Verfahren und Vorrichtung zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einer Schmelze

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (de) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0653504A1 (fr) * 1993-11-16 1995-05-17 Commissariat A L'energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu
FR2712608A1 (fr) * 1993-11-16 1995-05-24 Commissariat Energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu.

Also Published As

Publication number Publication date
DE2254616B2 (de) 1974-11-28
BE791024A (fr) 1973-05-07
GB1382529A (en) 1975-02-05
FR2159339B1 (fr) 1977-07-29
JPS5215075B2 (fr) 1977-04-26
IT973428B (it) 1974-06-10
NL7215097A (fr) 1973-05-10
CA974859A (en) 1975-09-23
JPS4875482A (fr) 1973-10-11
DE2254616A1 (de) 1973-05-10
US3846082A (en) 1974-11-05
BR7207786D0 (pt) 1973-09-27
CH576283A5 (fr) 1976-06-15
DE2254616C3 (de) 1975-07-10

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