FR2156420A2 - Beam-lead mesa diode prodn - for high reliability - Google Patents

Beam-lead mesa diode prodn - for high reliability

Info

Publication number
FR2156420A2
FR2156420A2 FR7137300A FR7137300A FR2156420A2 FR 2156420 A2 FR2156420 A2 FR 2156420A2 FR 7137300 A FR7137300 A FR 7137300A FR 7137300 A FR7137300 A FR 7137300A FR 2156420 A2 FR2156420 A2 FR 2156420A2
Authority
FR
France
Prior art keywords
prodn
lead
high reliability
mesa diode
esp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7137300A
Other languages
English (en)
French (fr)
Other versions
FR2156420B2 (esLanguage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7112524A external-priority patent/FR2132553B1/fr
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7137300A priority Critical patent/FR2156420A2/fr
Priority to DE19722216424 priority patent/DE2216424A1/de
Publication of FR2156420A2 publication Critical patent/FR2156420A2/fr
Application granted granted Critical
Publication of FR2156420B2 publication Critical patent/FR2156420B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W74/131—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/00—
    • H10W72/60—
    • H10W90/00—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7137300A 1971-04-08 1971-10-18 Beam-lead mesa diode prodn - for high reliability Granted FR2156420A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7137300A FR2156420A2 (en) 1971-04-08 1971-10-18 Beam-lead mesa diode prodn - for high reliability
DE19722216424 DE2216424A1 (de) 1971-04-08 1972-04-05 Halbleitervorrichtung mit mindestens einer Flächendiode mit Mesastruktur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7112524A FR2132553B1 (esLanguage) 1971-04-08 1971-04-08
FR7137300A FR2156420A2 (en) 1971-04-08 1971-10-18 Beam-lead mesa diode prodn - for high reliability

Publications (2)

Publication Number Publication Date
FR2156420A2 true FR2156420A2 (en) 1973-06-01
FR2156420B2 FR2156420B2 (esLanguage) 1976-04-30

Family

ID=26216317

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7137300A Granted FR2156420A2 (en) 1971-04-08 1971-10-18 Beam-lead mesa diode prodn - for high reliability

Country Status (2)

Country Link
DE (1) DE2216424A1 (esLanguage)
FR (1) FR2156420A2 (esLanguage)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351503A1 (fr) * 1976-05-11 1977-12-09 Thomson Csf Procede de realisation d'un circuit pour ondes millimetriques comportant une diode semi-conductrice et un autre composant semi-conducteur, et dispositifs realises par ledit procede
FR2422257A1 (fr) * 1977-11-28 1979-11-02 Silicium Semiconducteur Ssc Procede de sillonnage et de glassiviation et nouvelle structure de sillon
US4754316A (en) * 1982-06-03 1988-06-28 Texas Instruments Incorporated Solid state interconnection system for three dimensional integrated circuit structures
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1451676A (fr) * 1964-10-31 1966-01-07 Telefunken Patent Procédé de fabrication d'un dispositif semiconducteur

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1451676A (fr) * 1964-10-31 1966-01-07 Telefunken Patent Procédé de fabrication d'un dispositif semiconducteur

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
REVUE ALLEMANDE NEUES AUS DER TECHNIK,NO. 1, 1ER FEVRIER 1970, "HERSTELLEN EINES HALBLEITERBAUELEMENTS MIT EINEM SEHR STABILEN PN-UBERGANG", PAGE 4 *
REVUE JAPONAISE JOURNAL OF THE ASIA ELECTRONICS UNION, VOL. 11, NO. 4, 1969: R & D OF LOW TEMPERATURE PASSIVATED LTP SILICON TRANSISTORS" TAKASHI TOKUYAMA, PAGES 38-43 *

Also Published As

Publication number Publication date
DE2216424A1 (de) 1972-10-12
FR2156420B2 (esLanguage) 1976-04-30

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