FR2140007A1 - - Google Patents

Info

Publication number
FR2140007A1
FR2140007A1 FR7219025A FR7219025A FR2140007A1 FR 2140007 A1 FR2140007 A1 FR 2140007A1 FR 7219025 A FR7219025 A FR 7219025A FR 7219025 A FR7219025 A FR 7219025A FR 2140007 A1 FR2140007 A1 FR 2140007A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7219025A
Other languages
French (fr)
Other versions
FR2140007B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3675471A external-priority patent/JPS53274B1/ja
Priority claimed from JP6113471A external-priority patent/JPS55911B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2140007A1 publication Critical patent/FR2140007A1/fr
Application granted granted Critical
Publication of FR2140007B1 publication Critical patent/FR2140007B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/1414—
    • H10P32/171—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/69215—
    • H10P14/6923—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/133—Reflow oxides and glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
FR7219025A 1971-05-28 1972-05-26 Expired FR2140007B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3675471A JPS53274B1 (cg-RX-API-DMAC10.html) 1971-05-28 1971-05-28
JP6113471A JPS55911B2 (cg-RX-API-DMAC10.html) 1971-08-12 1971-08-12

Publications (2)

Publication Number Publication Date
FR2140007A1 true FR2140007A1 (cg-RX-API-DMAC10.html) 1973-01-12
FR2140007B1 FR2140007B1 (cg-RX-API-DMAC10.html) 1977-12-23

Family

ID=26375846

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7219025A Expired FR2140007B1 (cg-RX-API-DMAC10.html) 1971-05-28 1972-05-26

Country Status (5)

Country Link
US (1) US3837935A (cg-RX-API-DMAC10.html)
DE (1) DE2225374B2 (cg-RX-API-DMAC10.html)
FR (1) FR2140007B1 (cg-RX-API-DMAC10.html)
GB (1) GB1388772A (cg-RX-API-DMAC10.html)
NL (1) NL161306C (cg-RX-API-DMAC10.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2434485A1 (fr) * 1978-08-25 1980-03-21 Rca Corp Configuration de contact enfoui pour circuits integres cmos/sos
EP0009910A1 (en) * 1978-09-20 1980-04-16 Fujitsu Limited Semiconductor memory device and process for fabricating the device
FR2445023A1 (fr) * 1978-12-23 1980-07-18 Vlsi Technology Res Ass Procede de fabrication d'un circuit integre contenant du silicium polycristallin
EP0022388A1 (fr) * 1979-07-10 1981-01-14 Thomson-Csf Procédé de fabrication d'un transistor à effet de champ du type DMOS à fonctionnement vertical
FR2492166A1 (fr) * 1980-10-15 1982-04-16 Philips Nv Transistor a effet de champ et son procede de fabrication
FR2546664A1 (fr) * 1983-05-27 1984-11-30 American Telephone & Telegraph Procede de fabrication de transistors a effet de champ
EP0268266A3 (en) * 1986-11-19 1990-01-31 Kabushiki Kaisha Toshiba Contacts of semiconductor devices

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2640465A1 (de) * 1976-09-08 1978-03-09 Siemens Ag Verfahren zur herstellung dotierter zonen in einem halbleitersubstrat
US4045259A (en) * 1976-10-26 1977-08-30 Harris Corporation Process for fabricating diffused complementary field effect transistors
US4277881A (en) * 1978-05-26 1981-07-14 Rockwell International Corporation Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4587711A (en) * 1978-05-26 1986-05-13 Rockwell International Corporation Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
DE2936724A1 (de) * 1978-09-11 1980-03-20 Tokyo Shibaura Electric Co Halbleitervorrichtung und verfahren zu ihrer herstellung
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
US4587709A (en) * 1983-06-06 1986-05-13 International Business Machines Corporation Method of making short channel IGFET
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
GB8719842D0 (en) * 1987-08-21 1987-09-30 Atomic Energy Authority Uk Transistor
JPH0817173B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 成膜方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1152156A (en) * 1967-03-22 1969-05-14 Rca Corp Semiconductor Devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1152156A (en) * 1967-03-22 1969-05-14 Rca Corp Semiconductor Devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE "IEEE TRANSACTIONS ON ELECTRON DEVICES" VOLUME ED-17, AOUT 1970 "SILICON CONTACT FOR AREA REDUCTION OF INTEGRATED CIRCUITS" H.C.LIN ET AL,PAGE 636 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2434485A1 (fr) * 1978-08-25 1980-03-21 Rca Corp Configuration de contact enfoui pour circuits integres cmos/sos
EP0009910A1 (en) * 1978-09-20 1980-04-16 Fujitsu Limited Semiconductor memory device and process for fabricating the device
FR2445023A1 (fr) * 1978-12-23 1980-07-18 Vlsi Technology Res Ass Procede de fabrication d'un circuit integre contenant du silicium polycristallin
EP0022388A1 (fr) * 1979-07-10 1981-01-14 Thomson-Csf Procédé de fabrication d'un transistor à effet de champ du type DMOS à fonctionnement vertical
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
FR2492166A1 (fr) * 1980-10-15 1982-04-16 Philips Nv Transistor a effet de champ et son procede de fabrication
FR2546664A1 (fr) * 1983-05-27 1984-11-30 American Telephone & Telegraph Procede de fabrication de transistors a effet de champ
EP0268266A3 (en) * 1986-11-19 1990-01-31 Kabushiki Kaisha Toshiba Contacts of semiconductor devices

Also Published As

Publication number Publication date
DE2225374B2 (de) 1977-06-02
NL161306B (nl) 1979-08-15
GB1388772A (en) 1975-03-26
NL161306C (nl) 1980-01-15
NL7207071A (cg-RX-API-DMAC10.html) 1972-11-30
DE2225374A1 (de) 1973-06-20
FR2140007B1 (cg-RX-API-DMAC10.html) 1977-12-23
US3837935A (en) 1974-09-24

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Legal Events

Date Code Title Description
ST Notification of lapse