FR2130354A1 - Semiconductor mfr - using selective deep impurity diffusion to form zener diodes - Google Patents

Semiconductor mfr - using selective deep impurity diffusion to form zener diodes

Info

Publication number
FR2130354A1
FR2130354A1 FR7209316A FR7209316A FR2130354A1 FR 2130354 A1 FR2130354 A1 FR 2130354A1 FR 7209316 A FR7209316 A FR 7209316A FR 7209316 A FR7209316 A FR 7209316A FR 2130354 A1 FR2130354 A1 FR 2130354A1
Authority
FR
France
Prior art keywords
conductivity type
impurity diffusion
zener diodes
deep impurity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7209316A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2130354A1 publication Critical patent/FR2130354A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Method of forming a component within a semi-conductor substrate of one conductivity type comprises (a) diffusing an impurity of opposite conductivity type within a surface portion of the substrate (b) forming a dielectric layer over at least a part of the surface portion, the dielectric layer being capable of rejecting the impurity of opposite conductivity type, and (c) diffusing the impurity of opposite conductivity type deeper into the substrate to form a region of opposite conductivity type within the substrate such that the portion of the region directly under the dielectric layer is of higher conductivity than the remaining portion of the region.
FR7209316A 1971-03-22 1972-03-17 Semiconductor mfr - using selective deep impurity diffusion to form zener diodes Withdrawn FR2130354A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12671371A 1971-03-22 1971-03-22

Publications (1)

Publication Number Publication Date
FR2130354A1 true FR2130354A1 (en) 1972-11-03

Family

ID=22426314

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7209316A Withdrawn FR2130354A1 (en) 1971-03-22 1972-03-17 Semiconductor mfr - using selective deep impurity diffusion to form zener diodes

Country Status (3)

Country Link
DE (1) DE2213038A1 (en)
FR (1) FR2130354A1 (en)
ZA (1) ZA72849B (en)

Also Published As

Publication number Publication date
ZA72849B (en) 1972-10-25
DE2213038A1 (en) 1972-09-28

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Legal Events

Date Code Title Description
ST Notification of lapse