FR2130353A1 - Gas-etching for silicon nitride deposits - by glow discharge technique - Google Patents

Gas-etching for silicon nitride deposits - by glow discharge technique

Info

Publication number
FR2130353A1
FR2130353A1 FR7209315A FR7209315A FR2130353A1 FR 2130353 A1 FR2130353 A1 FR 2130353A1 FR 7209315 A FR7209315 A FR 7209315A FR 7209315 A FR7209315 A FR 7209315A FR 2130353 A1 FR2130353 A1 FR 2130353A1
Authority
FR
France
Prior art keywords
glow discharge
etching
silicon nitride
degrees
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7209315A
Other languages
English (en)
French (fr)
Other versions
FR2130353B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2130353A1 publication Critical patent/FR2130353A1/fr
Application granted granted Critical
Publication of FR2130353B1 publication Critical patent/FR2130353B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
FR7209315A 1971-03-19 1972-03-17 Gas-etching for silicon nitride deposits - by glow discharge technique Granted FR2130353A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12626471A 1971-03-19 1971-03-19

Publications (2)

Publication Number Publication Date
FR2130353A1 true FR2130353A1 (en) 1972-11-03
FR2130353B1 FR2130353B1 (OSRAM) 1977-03-25

Family

ID=22423889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7209315A Granted FR2130353A1 (en) 1971-03-19 1972-03-17 Gas-etching for silicon nitride deposits - by glow discharge technique

Country Status (2)

Country Link
DE (1) DE2213036C3 (OSRAM)
FR (1) FR2130353A1 (OSRAM)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
FR2035224A5 (OSRAM) * 1969-02-10 1970-12-18 Westinghouse Electric Corp
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
FR2035224A5 (OSRAM) * 1969-02-10 1970-12-18 Westinghouse Electric Corp
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Also Published As

Publication number Publication date
DE2213036C3 (de) 1978-06-15
DE2213036A1 (de) 1972-09-21
FR2130353B1 (OSRAM) 1977-03-25
DE2213036B2 (de) 1976-11-11

Similar Documents

Publication Publication Date Title
JPS5458636A (en) Ion nitriding method
JPS5329076A (en) Plasma treating apparatus of semiconductor substrates
GB1181764A (en) Improvements in or relating to Cleaning the Inner Surfaces of Quartz Vessels
GB978992A (en) Insulation
DE3778794D1 (de) Verfahren und vorrichtung zum ausbilden einer schicht durch plasmachemischen prozess.
JPS5233269A (en) Skid rails having stoppers to prevent collision between pipes
GB1461372A (en) Method of etching and/or polishing substrate surfaces
JPS6437028A (en) Manufacture of semiconductor element
JPS6464326A (en) Plasma cleaning method
JPS5767009A (en) Formation of film
FR2162409A1 (en) Amorphous aescin - from solns contg org nitrogenous bases
FR2238249A1 (en) Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate
ES349369A1 (es) Un metodo para tratar una cara de un cuerpo semiconductor.
FR2039996A5 (en) Crystallographically oriented surface - coatings
FR2290504A1 (fr) Procede pour deposer une couche de matiere dielectrique photosensible sur un support
JPS57134940A (en) Forming of semiconductor nitride layer
JPS525700A (en) The process for production of silicon nitride
ES391652A1 (es) Un metodo de formar un recubrimiento de conservacion quimi-ca sobre la superficie de un metal.
JPS5220770A (en) Semi-conductor unit
JPS52139373A (en) Treating method for compound semiconductor
FR2157168A5 (en) Fin removal from metal articles - by flame or corrosion treatment
JPS5228699A (en) Production method of high density, high dielectri ceramic
JPS51116200A (en) Method for formation of uniform and single phase silicon carbide coati ng
FR2077336A7 (en) Vacuum anodising of aluminium
JPS57104221A (en) Plasma etching method

Legal Events

Date Code Title Description
ST Notification of lapse