FR2122557A1 - - Google Patents

Info

Publication number
FR2122557A1
FR2122557A1 FR7201923A FR7201923A FR2122557A1 FR 2122557 A1 FR2122557 A1 FR 2122557A1 FR 7201923 A FR7201923 A FR 7201923A FR 7201923 A FR7201923 A FR 7201923A FR 2122557 A1 FR2122557 A1 FR 2122557A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7201923A
Other versions
FR2122557B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2122557A1 publication Critical patent/FR2122557A1/fr
Application granted granted Critical
Publication of FR2122557B1 publication Critical patent/FR2122557B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7201923A 1971-01-21 1972-01-20 Expired FR2122557B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2102854A DE2102854C3 (de) 1971-01-21 1971-01-21 Verfahren zur Herstellung eines Festwertspeichers

Publications (2)

Publication Number Publication Date
FR2122557A1 true FR2122557A1 (fr) 1972-09-01
FR2122557B1 FR2122557B1 (fr) 1976-07-09

Family

ID=5796572

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7201923A Expired FR2122557B1 (fr) 1971-01-21 1972-01-20

Country Status (8)

Country Link
JP (1) JPS5716440B1 (fr)
BE (1) BE778166A (fr)
DE (1) DE2102854C3 (fr)
FR (1) FR2122557B1 (fr)
GB (1) GB1373996A (fr)
IT (1) IT946699B (fr)
LU (1) LU64616A1 (fr)
NL (1) NL7115829A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345786A1 (fr) * 1976-03-22 1977-10-21 Gen Electric Support de memorisation d'informations
FR2551247A1 (fr) * 1983-08-23 1985-03-01 Rosencher Emmanuel Memoire integree non volatile reinscriptible, procede de fabrication de cette memoire et dispositif d'ecriture dans celle-ci

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345786A1 (fr) * 1976-03-22 1977-10-21 Gen Electric Support de memorisation d'informations
FR2551247A1 (fr) * 1983-08-23 1985-03-01 Rosencher Emmanuel Memoire integree non volatile reinscriptible, procede de fabrication de cette memoire et dispositif d'ecriture dans celle-ci

Also Published As

Publication number Publication date
DE2102854B2 (de) 1973-03-15
BE778166A (fr) 1972-05-16
NL7115829A (fr) 1972-07-25
DE2102854A1 (de) 1972-08-03
FR2122557B1 (fr) 1976-07-09
GB1373996A (en) 1974-11-13
IT946699B (it) 1973-05-21
DE2102854C3 (de) 1973-10-11
LU64616A1 (fr) 1972-06-26
JPS5716440B1 (fr) 1982-04-05

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Legal Events

Date Code Title Description
ST Notification of lapse