FR2117855A1 - Selective application of metal layer - onto substrate surface provided with patterned protective coating - Google Patents

Selective application of metal layer - onto substrate surface provided with patterned protective coating

Info

Publication number
FR2117855A1
FR2117855A1 FR7139294A FR7139294A FR2117855A1 FR 2117855 A1 FR2117855 A1 FR 2117855A1 FR 7139294 A FR7139294 A FR 7139294A FR 7139294 A FR7139294 A FR 7139294A FR 2117855 A1 FR2117855 A1 FR 2117855A1
Authority
FR
France
Prior art keywords
protective coating
substrate surface
metal layer
surface provided
selective application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7139294A
Other languages
French (fr)
Other versions
FR2117855B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2117855A1 publication Critical patent/FR2117855A1/en
Application granted granted Critical
Publication of FR2117855B1 publication Critical patent/FR2117855B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/146—By vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Substrate, e.g., glass, is provided with a protective coating corresponding to the desired pattern, and a gas mixture is passed over it comprising a reducible metal cpd., such as WF6, and a reducing gas such as H2. As a result, tungsten is deposited onto the protective coating only, as the unprotected part of the substrate surface is being etched away by HF produced during the reaction. Highly accurate patterns can be obtained. The method is suitable for the prodn. of printed circuits and similar applications; also for etching accurate patterns in glass (without under-etching), for this purpose the metal coating is eventually dissolved.
FR7139294A 1970-12-16 1971-10-26 Selective application of metal layer - onto substrate surface provided with patterned protective coating Granted FR2117855A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9853370A 1970-12-16 1970-12-16
US9853470A 1970-12-16 1970-12-16

Publications (2)

Publication Number Publication Date
FR2117855A1 true FR2117855A1 (en) 1972-07-28
FR2117855B1 FR2117855B1 (en) 1974-05-31

Family

ID=26794833

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7139294A Granted FR2117855A1 (en) 1970-12-16 1971-10-26 Selective application of metal layer - onto substrate surface provided with patterned protective coating

Country Status (3)

Country Link
JP (1) JPS5539624B1 (en)
DE (1) DE2151127C3 (en)
FR (1) FR2117855A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588277A1 (en) * 1985-10-07 1987-04-10 Gen Electric METHOD FOR DEPOSITING A TUNGSTEN LAYER ON A DIELECTRIC SURFACE
EP0284435A2 (en) * 1987-03-26 1988-09-28 Canon Kabushiki Kaisha Process for selective formation of II-VI group compound film
EP0307109A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141567C2 (en) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Process for producing layers consisting of tantalum, tungsten or molybdenum at low temperatures and using these layers
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film
DE3730644A1 (en) * 1987-09-11 1989-03-30 Baeuerle Dieter METHOD FOR THE PRESENTED STRUCTURED DEPOSITION OF MICROSTRUCTURES WITH LASER LIGHT
US5021363A (en) * 1989-09-07 1991-06-04 Laboratories Incorporated Method of selectively producing conductive members on a semiconductor surface
US10622214B2 (en) * 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
GB1051451A (en) * 1963-02-08
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals
GB1129707A (en) * 1966-11-10 1968-10-09 Ass Elect Ind The deposition of tungsten on semi-conductor material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588277A1 (en) * 1985-10-07 1987-04-10 Gen Electric METHOD FOR DEPOSITING A TUNGSTEN LAYER ON A DIELECTRIC SURFACE
EP0284435A2 (en) * 1987-03-26 1988-09-28 Canon Kabushiki Kaisha Process for selective formation of II-VI group compound film
EP0284435A3 (en) * 1987-03-26 1989-01-25 Canon Kabushiki Kaisha Process for selective formation of ii-vi group compound film
EP0307109A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
US5130103A (en) * 1987-08-24 1992-07-14 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method

Also Published As

Publication number Publication date
DE2151127A1 (en) 1972-07-13
DE2151127C3 (en) 1981-04-16
DE2151127B2 (en) 1980-07-10
JPS5539624B1 (en) 1980-10-13
FR2117855B1 (en) 1974-05-31

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Legal Events

Date Code Title Description
ST Notification of lapse