FR2099704A7 - - Google Patents
Info
- Publication number
- FR2099704A7 FR2099704A7 FR7126688A FR7126688A FR2099704A7 FR 2099704 A7 FR2099704 A7 FR 2099704A7 FR 7126688 A FR7126688 A FR 7126688A FR 7126688 A FR7126688 A FR 7126688A FR 2099704 A7 FR2099704 A7 FR 2099704A7
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5997370A | 1970-07-31 | 1970-07-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2099704A7 true FR2099704A7 (enExample) | 1972-03-17 |
| FR2099704B3 FR2099704B3 (enExample) | 1973-08-10 |
Family
ID=22026513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR717126688A Expired FR2099704B3 (enExample) | 1970-07-31 | 1971-07-21 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5224833B1 (enExample) |
| BE (1) | BE770353A (enExample) |
| DE (1) | DE2130457C2 (enExample) |
| FR (1) | FR2099704B3 (enExample) |
| GB (1) | GB1348697A (enExample) |
| HK (1) | HK42277A (enExample) |
| NL (1) | NL7107832A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2393423A1 (fr) * | 1977-05-30 | 1978-12-29 | Ates Componenti Elettron | Dispositif a semi-conducteur du type plan |
| WO1982003949A1 (fr) * | 1981-05-06 | 1982-11-11 | Hartmut Michel | Structure plane de transistor |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2936724A1 (de) * | 1978-09-11 | 1980-03-20 | Tokyo Shibaura Electric Co | Halbleitervorrichtung und verfahren zu ihrer herstellung |
| DE2944937A1 (de) * | 1979-11-07 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
| DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
| DE3201545A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Planare halbleiteranordnung |
| DE3227536A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Darlington-transistorschaltung |
| DE3219598A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
| DE3520599A1 (de) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Halbleiterbauelement |
| KR890004495B1 (ko) * | 1984-11-29 | 1989-11-06 | 가부시끼가이샤 도오시바 | 반도체 장치 |
| EP0255968A3 (en) * | 1986-08-08 | 1988-08-10 | SILICONIX Incorporated | High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage |
| JPS63136668A (ja) * | 1986-11-28 | 1988-06-08 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA941074A (en) * | 1964-04-16 | 1974-01-29 | Northern Electric Company Limited | Semiconductor devices with field electrodes |
| SE300472B (enExample) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
| US3463977A (en) * | 1966-04-21 | 1969-08-26 | Fairchild Camera Instr Co | Optimized double-ring semiconductor device |
| DE1614815A1 (de) * | 1967-05-20 | 1970-12-23 | Telefunken Patent | Halbleiteranordnung |
-
1971
- 1971-05-11 GB GB1430371*[A patent/GB1348697A/en not_active Expired
- 1971-06-08 NL NL7107832A patent/NL7107832A/xx unknown
- 1971-06-11 JP JP46041118A patent/JPS5224833B1/ja active Pending
- 1971-06-19 DE DE2130457A patent/DE2130457C2/de not_active Expired
- 1971-07-21 FR FR717126688A patent/FR2099704B3/fr not_active Expired
- 1971-07-22 BE BE770353A patent/BE770353A/xx unknown
-
1977
- 1977-08-11 HK HK422/77A patent/HK42277A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2393423A1 (fr) * | 1977-05-30 | 1978-12-29 | Ates Componenti Elettron | Dispositif a semi-conducteur du type plan |
| WO1982003949A1 (fr) * | 1981-05-06 | 1982-11-11 | Hartmut Michel | Structure plane de transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| HK42277A (en) | 1977-08-19 |
| FR2099704B3 (enExample) | 1973-08-10 |
| GB1348697A (en) | 1974-03-20 |
| DE2130457A1 (de) | 1972-02-03 |
| BE770353A (fr) | 1971-12-01 |
| NL7107832A (enExample) | 1972-02-02 |
| JPS5224833B1 (enExample) | 1977-07-04 |
| DE2130457C2 (de) | 1986-09-18 |