FR2092728A7 - N-doped silicon - by phosphorus diffusion from phosphine - Google Patents

N-doped silicon - by phosphorus diffusion from phosphine

Info

Publication number
FR2092728A7
FR2092728A7 FR7021676A FR7021676A FR2092728A7 FR 2092728 A7 FR2092728 A7 FR 2092728A7 FR 7021676 A FR7021676 A FR 7021676A FR 7021676 A FR7021676 A FR 7021676A FR 2092728 A7 FR2092728 A7 FR 2092728A7
Authority
FR
France
Prior art keywords
phosphine
batch
doped silicon
rhos
minus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7021676A
Other languages
English (en)
French (fr)
Other versions
FR2092728B3 (show.php
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7021676A priority Critical patent/FR2092728A7/fr
Application granted granted Critical
Publication of FR2092728A7 publication Critical patent/FR2092728A7/fr
Publication of FR2092728B3 publication Critical patent/FR2092728B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Silicon Compounds (AREA)
FR7021676A 1970-06-12 1970-06-12 N-doped silicon - by phosphorus diffusion from phosphine Expired FR2092728A7 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7021676A FR2092728A7 (en) 1970-06-12 1970-06-12 N-doped silicon - by phosphorus diffusion from phosphine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7021676A FR2092728A7 (en) 1970-06-12 1970-06-12 N-doped silicon - by phosphorus diffusion from phosphine

Publications (2)

Publication Number Publication Date
FR2092728A7 true FR2092728A7 (en) 1972-01-28
FR2092728B3 FR2092728B3 (show.php) 1973-03-16

Family

ID=9057100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7021676A Expired FR2092728A7 (en) 1970-06-12 1970-06-12 N-doped silicon - by phosphorus diffusion from phosphine

Country Status (1)

Country Link
FR (1) FR2092728A7 (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008642A1 (de) * 1978-09-07 1980-03-19 International Business Machines Corporation Verfahren zum Dotieren von Siliciumkörpern mit Bor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008642A1 (de) * 1978-09-07 1980-03-19 International Business Machines Corporation Verfahren zum Dotieren von Siliciumkörpern mit Bor

Also Published As

Publication number Publication date
FR2092728B3 (show.php) 1973-03-16

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Legal Events

Date Code Title Description
ST Notification of lapse