FR2092728A7 - N-doped silicon - by phosphorus diffusion from phosphine - Google Patents
N-doped silicon - by phosphorus diffusion from phosphineInfo
- Publication number
- FR2092728A7 FR2092728A7 FR7021676A FR7021676A FR2092728A7 FR 2092728 A7 FR2092728 A7 FR 2092728A7 FR 7021676 A FR7021676 A FR 7021676A FR 7021676 A FR7021676 A FR 7021676A FR 2092728 A7 FR2092728 A7 FR 2092728A7
- Authority
- FR
- France
- Prior art keywords
- phosphine
- batch
- doped silicon
- rhos
- minus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 title abstract 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 title abstract 4
- 238000009792 diffusion process Methods 0.000 title abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
N-Type regions are formed in Si by diffusion from low concn. of phosphine (100-300 ppm) in N2 contg. 0.1 to 2%, pref. 0.2 to 1% O2. Process involves deposition from typical composition 0.4% O2, 250 ppm PH3, 2.5% Ar remainder N2 for 10-40 mins at 800-1200 degrees C followed by drive-in in wet or dry N2 or O2 at 1000-12000 degrees C. Low PH3 concentration reduces inactive P, gives near error function distribution, reproducibility plus-or-minus 2.8% in diffusion depth; plus-or-minus 2.1% in rhos over 50 slice batch, 5% batch-to-batch variation. Useful for rhos 1-100 OMEGA.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7021676A FR2092728A7 (en) | 1970-06-12 | 1970-06-12 | N-doped silicon - by phosphorus diffusion from phosphine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7021676A FR2092728A7 (en) | 1970-06-12 | 1970-06-12 | N-doped silicon - by phosphorus diffusion from phosphine |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2092728A7 true FR2092728A7 (en) | 1972-01-28 |
FR2092728B3 FR2092728B3 (en) | 1973-03-16 |
Family
ID=9057100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7021676A Expired FR2092728A7 (en) | 1970-06-12 | 1970-06-12 | N-doped silicon - by phosphorus diffusion from phosphine |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2092728A7 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008642A1 (en) * | 1978-09-07 | 1980-03-19 | International Business Machines Corporation | Method of diffusing boron in silicon bodies |
-
1970
- 1970-06-12 FR FR7021676A patent/FR2092728A7/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008642A1 (en) * | 1978-09-07 | 1980-03-19 | International Business Machines Corporation | Method of diffusing boron in silicon bodies |
Also Published As
Publication number | Publication date |
---|---|
FR2092728B3 (en) | 1973-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3752711A (en) | Method of manufacturing an igfet and the product thereof | |
Goldstein | Diffusion of cadmium and zinc in gallium arsenide | |
GB1420557A (en) | Method of making a semiconductor device | |
GB1513332A (en) | Methods of making semiconductor devices | |
GB1313829A (en) | Transistors and aproduction thereof | |
GB1335814A (en) | Transistor and method of manufacturing the same | |
GB1486099A (en) | Planar diffusion method for making integrated circuits | |
GB1442693A (en) | Method of manufacturing a junction field effect transistor | |
FR2092728A7 (en) | N-doped silicon - by phosphorus diffusion from phosphine | |
US3352725A (en) | Method of forming a gallium arsenide transistor by diffusion | |
GB1098564A (en) | A method for producing gallium arsenide devices | |
GB1053406A (en) | ||
US2979429A (en) | Diffused transistor and method of making | |
US3919006A (en) | Method of manufacturing a lateral transistor | |
US3540950A (en) | Methods of manufacturing planar transistors | |
US3375146A (en) | Method for producing a p-n junction in a monocrystalline semiconductor member by etching and diffusion | |
JPS5574181A (en) | Preparing junction type field effect transistor | |
US3673012A (en) | Method of producing a transistor | |
DE2006994A1 (en) | Method for doping a silicon crystal by diffusing boron or phosphorus from an oxide layer which is produced on the silicon surface and which releases the dopant | |
JPS526080A (en) | Production method of semiconductor wafer | |
JPS5626477A (en) | Variable-capacity diode manufacturing process | |
JPS5732650A (en) | Semiconductor device | |
GB1278052A (en) | Semiconductor devices and methods of making them | |
FR2139667A1 (en) | Diffused base transistor - with a source of recombination centres | |
JPS5723280A (en) | Field effect type light detector |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |