FR2062743A5 - Germanium silicon oxynitride passivation of semiconductor - devices - Google Patents

Germanium silicon oxynitride passivation of semiconductor - devices

Info

Publication number
FR2062743A5
FR2062743A5 FR7035031A FR7035031A FR2062743A5 FR 2062743 A5 FR2062743 A5 FR 2062743A5 FR 7035031 A FR7035031 A FR 7035031A FR 7035031 A FR7035031 A FR 7035031A FR 2062743 A5 FR2062743 A5 FR 2062743A5
Authority
FR
France
Prior art keywords
semiconductor
devices
silicon oxynitride
germanium silicon
oxynitride passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7035031A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Application granted granted Critical
Publication of FR2062743A5 publication Critical patent/FR2062743A5/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Abstract

Layers are deposited by d. c. discharge from solid sources of Ge, Si or Ge-Si containing oxygen in a nitrogen atmosphere of 3-100 mu Hg at flow rate of 2.8 to 281/min. Alternatively pure Si and Ge may be used in an atmosphere of nitrogen and oxygen. The layers are used for passivation or as diffusion masks and are more resistant to atmospheric or ionic contamination and radiation than SiO2; may be thinner for diffusion masks and are not attacked by contact metals (e.g. Al) when forming alloyed contacts up to 850 degrees C.
FR7035031A 1969-11-05 1970-09-28 Germanium silicon oxynitride passivation of semiconductor - devices Expired FR2062743A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87411169A 1969-11-05 1969-11-05

Publications (1)

Publication Number Publication Date
FR2062743A5 true FR2062743A5 (en) 1971-06-25

Family

ID=25362997

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7035031A Expired FR2062743A5 (en) 1969-11-05 1970-09-28 Germanium silicon oxynitride passivation of semiconductor - devices

Country Status (1)

Country Link
FR (1) FR2062743A5 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001034530A1 (en) * 1999-11-10 2001-05-17 Corning Incorporated Germanium silicon oxynitride high index films for planar waveguides

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001034530A1 (en) * 1999-11-10 2001-05-17 Corning Incorporated Germanium silicon oxynitride high index films for planar waveguides
US6408125B1 (en) 1999-11-10 2002-06-18 Corning Incorporated Germanium silicon oxynitride high index films for planar waveguides
US6449420B1 (en) 1999-11-10 2002-09-10 Corning Incorporated Germanium silicon oxynitride high index films for planar waveguides
JP2003513875A (en) * 1999-11-10 2003-04-15 コーニング・インコーポレーテッド Germanium silicon oxynitride high refractive index thin films for planar waveguides
JP4746236B2 (en) * 1999-11-10 2011-08-10 コーニング インコーポレイテッド Germanium silicon oxynitride high refractive index thin film for planar waveguide

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Legal Events

Date Code Title Description
ST Notification of lapse