FR2056965A1 - Forming si oxide regions on si semiconductor - substrate - Google Patents

Forming si oxide regions on si semiconductor - substrate

Info

Publication number
FR2056965A1
FR2056965A1 FR7028328A FR7028328A FR2056965A1 FR 2056965 A1 FR2056965 A1 FR 2056965A1 FR 7028328 A FR7028328 A FR 7028328A FR 7028328 A FR7028328 A FR 7028328A FR 2056965 A1 FR2056965 A1 FR 2056965A1
Authority
FR
France
Prior art keywords
semiconductor
substrate
forming
oxide regions
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7028328A
Other languages
French (fr)
Other versions
FR2056965B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2056965A1 publication Critical patent/FR2056965A1/en
Application granted granted Critical
Publication of FR2056965B1 publication Critical patent/FR2056965B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)

Abstract

Masking film is produced at some locations on a monocrystalline Si body, and prevents oxidation of the subjacent portions of the body. It can be etched by a substance which has little or no effect on SiO2. The non-covered parts are then oxidized. Pref. the film is of e.g. Si nitride and Al2O3, and is etched with hot phosphoric acid.
FR7028328A 1969-08-04 1970-07-31 Forming si oxide regions on si semiconductor - substrate Granted FR2056965A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84701269A 1969-08-04 1969-08-04

Publications (2)

Publication Number Publication Date
FR2056965A1 true FR2056965A1 (en) 1971-05-07
FR2056965B1 FR2056965B1 (en) 1974-10-11

Family

ID=25299548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7028328A Granted FR2056965A1 (en) 1969-08-04 1970-07-31 Forming si oxide regions on si semiconductor - substrate

Country Status (8)

Country Link
JP (1) JPS504511B1 (en)
BE (1) BE753245A (en)
DE (1) DE2038361A1 (en)
ES (1) ES382248A1 (en)
FR (1) FR2056965A1 (en)
NL (1) NL7011437A (en)
SE (1) SE371539B (en)
ZA (1) ZA705326B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6704958A (en) * 1966-04-08 1967-10-09
NL6614016A (en) * 1966-10-05 1968-04-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6704958A (en) * 1966-04-08 1967-10-09
NL6614016A (en) * 1966-10-05 1968-04-08

Also Published As

Publication number Publication date
JPS504511B1 (en) 1975-02-20
SE371539B (en) 1974-11-18
NL7011437A (en) 1971-02-08
ES382248A1 (en) 1972-11-16
FR2056965B1 (en) 1974-10-11
ZA705326B (en) 1971-04-28
DE2038361A1 (en) 1971-02-18
BE753245A (en) 1970-12-16

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Legal Events

Date Code Title Description
ST Notification of lapse