FR2045912A1 - - Google Patents

Info

Publication number
FR2045912A1
FR2045912A1 FR7006057A FR7006057A FR2045912A1 FR 2045912 A1 FR2045912 A1 FR 2045912A1 FR 7006057 A FR7006057 A FR 7006057A FR 7006057 A FR7006057 A FR 7006057A FR 2045912 A1 FR2045912 A1 FR 2045912A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7006057A
Other languages
French (fr)
Other versions
FR2045912B1 (US07122603-20061017-C00294.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2045912A1 publication Critical patent/FR2045912A1/fr
Application granted granted Critical
Publication of FR2045912B1 publication Critical patent/FR2045912B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
FR7006057A 1969-06-09 1970-02-19 Expired FR2045912B1 (US07122603-20061017-C00294.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83167569A 1969-06-09 1969-06-09

Publications (2)

Publication Number Publication Date
FR2045912A1 true FR2045912A1 (US07122603-20061017-C00294.png) 1971-03-05
FR2045912B1 FR2045912B1 (US07122603-20061017-C00294.png) 1974-03-15

Family

ID=25259591

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7006057A Expired FR2045912B1 (US07122603-20061017-C00294.png) 1969-06-09 1970-02-19

Country Status (5)

Country Link
US (1) US3644154A (US07122603-20061017-C00294.png)
JP (1) JPS549025B1 (US07122603-20061017-C00294.png)
DE (1) DE2025611A1 (US07122603-20061017-C00294.png)
FR (1) FR2045912B1 (US07122603-20061017-C00294.png)
GB (1) GB1295756A (US07122603-20061017-C00294.png)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753809A (en) * 1970-01-09 1973-08-21 Ibm Method for obtaining optimum phosphorous concentration in semiconductor wafers
DE2133876A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures
US3923563A (en) * 1973-04-16 1975-12-02 Owens Illinois Inc Process for doping silicon semiconductors using an impregnated refractory dopant source
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
DE3041071A1 (de) * 1980-10-31 1982-06-09 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum behandeln von hocherhitzten halbleiterplaettchen
US4357180A (en) * 1981-01-26 1982-11-02 The United States Of America As Represented By The Secretary Of The Navy Annealing of ion-implanted GaAs and InP semiconductors
EP0061787B1 (de) * 1981-03-02 1985-11-21 BBC Aktiengesellschaft Brown, Boveri & Cie. Verfahren zum Dotieren von Trägern aus Silicium für die Halbleiterfertigung
CA1244969A (en) * 1986-10-29 1988-11-15 Mitel Corporation Method for diffusing p-type material using boron disks
DE3907610A1 (de) * 1989-03-09 1990-09-13 Telefunken Electronic Gmbh Epitaxieverfahren
DE4019611A1 (de) * 1990-06-20 1992-01-02 Schaefer Franz W Transporteinheit fuer leiterplatten
DE4026244C2 (de) * 1990-08-18 1996-02-08 Ant Nachrichtentech Substratträger
DE4206374C2 (de) * 1992-02-29 2000-11-02 Vishay Semiconductor Gmbh Verfahren und Vorrichtungen zur Epitaxie
US5401692A (en) * 1993-06-15 1995-03-28 Texas Instruments Incorporated Method for minimizing particle generation on a wafer surface during high pressure oxidation of silicon
DE19856468C1 (de) * 1998-11-30 2000-06-15 Sico Jena Gmbh Quarzschmelze Verfahren zur Herstellung einer Haltevorrichtung für Halbleiterscheiben
DE10155255A1 (de) * 2001-11-09 2003-05-28 Infineon Technologies Ag Waferhandhabungsvorrichtung und Verfahren zum Bearbeiten eines Wafers mit einer empfindlichen Oberfläche

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3131099A (en) * 1962-07-27 1964-04-28 Gen Instrument Corp Manufacture of semiconductors
US3305412A (en) * 1964-02-20 1967-02-21 Hughes Aircraft Co Method for preparing a gallium arsenide diode
FR1479033A (fr) * 1965-05-10 1967-04-28 Rca Corp Perfectionnements à la fabrication de semi-conducteurs
FR1551367A (US07122603-20061017-C00294.png) * 1966-12-30 1968-12-27

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3131099A (en) * 1962-07-27 1964-04-28 Gen Instrument Corp Manufacture of semiconductors
US3305412A (en) * 1964-02-20 1967-02-21 Hughes Aircraft Co Method for preparing a gallium arsenide diode
FR1479033A (fr) * 1965-05-10 1967-04-28 Rca Corp Perfectionnements à la fabrication de semi-conducteurs
FR1551367A (US07122603-20061017-C00294.png) * 1966-12-30 1968-12-27

Also Published As

Publication number Publication date
GB1295756A (US07122603-20061017-C00294.png) 1972-11-08
JPS549025B1 (US07122603-20061017-C00294.png) 1979-04-20
DE2025611A1 (US07122603-20061017-C00294.png) 1970-12-17
FR2045912B1 (US07122603-20061017-C00294.png) 1974-03-15
US3644154A (en) 1972-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse