FR2027452A1 - - Google Patents
Info
- Publication number
- FR2027452A1 FR2027452A1 FR6945393A FR6945393A FR2027452A1 FR 2027452 A1 FR2027452 A1 FR 2027452A1 FR 6945393 A FR6945393 A FR 6945393A FR 6945393 A FR6945393 A FR 6945393A FR 2027452 A1 FR2027452 A1 FR 2027452A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB61953/68A GB1244225A (en) | 1968-12-31 | 1968-12-31 | Improvements in and relating to methods of manufacturing semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2027452A1 true FR2027452A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-09-25 |
| FR2027452B1 FR2027452B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-02-01 |
Family
ID=10487686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR6945393A Expired FR2027452B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-12-31 | 1969-12-30 |
Country Status (14)
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2067382A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-11-19 | 1971-08-20 | Philips Nv | |
| FR2073494A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-12-24 | 1971-10-01 | Philips Nv | |
| FR2129992A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-03-25 | 1972-11-03 | Lecrosnier Daniel | |
| FR2400259A1 (fr) * | 1977-04-15 | 1979-03-09 | Hitachi Ltd | Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier |
| FR2406302A1 (fr) * | 1977-10-11 | 1979-05-11 | Fujitsu Ltd | Procede d'implantation d'ions |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3874937A (en) * | 1973-10-31 | 1975-04-01 | Gen Instrument Corp | Method for manufacturing metal oxide semiconductor integrated circuit of reduced size |
| FR2289051A1 (fr) * | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
| US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
| US3930893A (en) * | 1975-03-03 | 1976-01-06 | Honeywell Information Systems, Inc. | Conductivity connected charge-coupled device fabrication process |
| US4061506A (en) * | 1975-05-01 | 1977-12-06 | Texas Instruments Incorporated | Correcting doping defects |
| US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
| US4171229A (en) * | 1977-06-24 | 1979-10-16 | International Business Machines Corporation | Improved process to form bucket brigade device |
| US4142199A (en) * | 1977-06-24 | 1979-02-27 | International Business Machines Corporation | Bucket brigade device and process |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US4280271A (en) * | 1979-10-11 | 1981-07-28 | Texas Instruments Incorporated | Three level interconnect process for manufacture of integrated circuit devices |
| JPH0834297B2 (ja) * | 1988-12-28 | 1996-03-29 | 三菱電機株式会社 | 半導体装置 |
| AU657720B2 (en) * | 1991-01-30 | 1995-03-23 | Canon Kabushiki Kaisha | A bubblejet image reproducing apparatus |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| JP6356516B2 (ja) * | 2014-07-22 | 2018-07-11 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1577669A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1967-08-18 | 1969-08-08 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
| NL6604962A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1966-04-14 | 1967-10-16 | ||
| US3470610A (en) * | 1967-08-18 | 1969-10-07 | Conductron Corp | Method of producing a control system |
| US3558366A (en) * | 1968-09-17 | 1971-01-26 | Bell Telephone Labor Inc | Metal shielding for ion implanted semiconductor device |
-
1968
- 1968-12-31 GB GB61953/68A patent/GB1244225A/en not_active Expired
-
1969
- 1969-12-15 ZA ZA698728A patent/ZA698728B/xx unknown
- 1969-12-23 DK DK683869AA patent/DK125220B/da unknown
- 1969-12-24 ES ES374906A patent/ES374906A1/es not_active Expired
- 1969-12-25 NL NL6919463A patent/NL6919463A/xx unknown
- 1969-12-29 BE BE743829D patent/BE743829A/xx unknown
- 1969-12-29 BR BR215650/69A patent/BR6915650D0/pt unknown
- 1969-12-29 US US888543A patent/US3650019A/en not_active Expired - Lifetime
- 1969-12-29 SE SE17986/69A patent/SE347392B/xx unknown
- 1969-12-29 JP JP44105411A patent/JPS4816034B1/ja active Pending
- 1969-12-29 CH CH1934069A patent/CH514935A/de not_active IP Right Cessation
- 1969-12-30 DE DE1965799A patent/DE1965799C3/de not_active Expired
- 1969-12-30 FR FR6945393A patent/FR2027452B1/fr not_active Expired
- 1969-12-30 AT AT1211869A patent/AT311420B/de not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1577669A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1967-08-18 | 1969-08-08 |
Non-Patent Citations (2)
| Title |
|---|
| *REVUE AMERICAINE "ELECTRONICS" VOLUME41, NO. 23, NOVEMBRE 1968: "ION IMPLANT SERENDIPITY" PAGES 55-56 * |
| REVUE AMERICAINE "SOLID STATE ELECTRONICS" VOLUME 7, NO 6,JUIN 1964, "MOLYTDENUM MASHING OF ION BOMBARDMENT DOPING OF SILICON" I.AMADEI ET AL, PAGE 487. * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2067382A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-11-19 | 1971-08-20 | Philips Nv | |
| FR2067383A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-11-19 | 1971-08-20 | Philips Nv | |
| FR2073494A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-12-24 | 1971-10-01 | Philips Nv | |
| FR2129992A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-03-25 | 1972-11-03 | Lecrosnier Daniel | |
| FR2400259A1 (fr) * | 1977-04-15 | 1979-03-09 | Hitachi Ltd | Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier |
| US4599576A (en) * | 1977-04-15 | 1986-07-08 | Hitachi, Ltd. | Insulated gate type field effect semiconductor device and a circuit employing the device |
| FR2406302A1 (fr) * | 1977-10-11 | 1979-05-11 | Fujitsu Ltd | Procede d'implantation d'ions |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1965799A1 (de) | 1970-07-23 |
| NL6919463A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-07-02 |
| DE1965799C3 (de) | 1978-06-01 |
| GB1244225A (en) | 1971-08-25 |
| ZA698728B (en) | 1971-07-28 |
| BE743829A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-06-29 |
| ES374906A1 (es) | 1972-03-16 |
| SE347392B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-07-31 |
| AT311420B (de) | 1973-11-12 |
| DE1965799B2 (de) | 1977-09-29 |
| FR2027452B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-02-01 |
| US3650019A (en) | 1972-03-21 |
| JPS4816034B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-05-18 |
| BR6915650D0 (pt) | 1973-01-02 |
| CH514935A (de) | 1971-10-31 |
| DK125220B (da) | 1973-01-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |