FR2025862B1 - - Google Patents

Info

Publication number
FR2025862B1
FR2025862B1 FR696942419A FR6942419A FR2025862B1 FR 2025862 B1 FR2025862 B1 FR 2025862B1 FR 696942419 A FR696942419 A FR 696942419A FR 6942419 A FR6942419 A FR 6942419A FR 2025862 B1 FR2025862 B1 FR 2025862B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR696942419A
Other languages
French (fr)
Other versions
FR2025862A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2025862A1 publication Critical patent/FR2025862A1/fr
Application granted granted Critical
Publication of FR2025862B1 publication Critical patent/FR2025862B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
FR696942419A 1968-12-11 1969-12-09 Expired FR2025862B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43090252A JPS501513B1 (enExample) 1968-12-11 1968-12-11

Publications (2)

Publication Number Publication Date
FR2025862A1 FR2025862A1 (enExample) 1970-09-11
FR2025862B1 true FR2025862B1 (enExample) 1973-05-25

Family

ID=13993292

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696942419A Expired FR2025862B1 (enExample) 1968-12-11 1969-12-09

Country Status (5)

Country Link
US (1) US4009484A (enExample)
JP (1) JPS501513B1 (enExample)
DE (1) DE1961739A1 (enExample)
FR (1) FR2025862B1 (enExample)
NL (1) NL6918519A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3929529A (en) * 1974-12-09 1975-12-30 Ibm Method for gettering contaminants in monocrystalline silicon
GB1572703A (en) * 1975-12-10 1980-07-30 Tokyo Shibaura Electric Co Semiconductor device and method of producing a semiconductor device
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
US4184172A (en) * 1976-12-06 1980-01-15 Massachusetts Institute Of Technology Dielectric isolation using shallow oxide and polycrystalline silicon
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
US4262299A (en) * 1979-01-29 1981-04-14 Rca Corporation Semiconductor-on-insulator device and method for its manufacture
US4283235A (en) * 1979-07-27 1981-08-11 Massachusetts Institute Of Technology Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation
US4231819A (en) * 1979-07-27 1980-11-04 Massachusetts Institute Of Technology Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
JPH01289264A (ja) * 1988-05-17 1989-11-21 Toshiba Corp 半導体装置
DE4236300A1 (de) * 1992-10-28 1994-05-11 Telefunken Microelectron Verfahren zur Herstellung von Halbleiterbauelementen mit geringer Schaltzeit
KR0175000B1 (ko) * 1994-12-14 1999-02-01 윤종용 전자파 억제구조를 갖는 반도체 소자
JP4351869B2 (ja) * 2003-06-10 2009-10-28 隆 河東田 半導体を用いた電子デバイス
US7505309B2 (en) * 2005-04-20 2009-03-17 Micron Technology, Inc. Static RAM memory cell with DNR chalcogenide devices and method of forming

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145075A (en) * 1965-04-07 1969-03-12 Matsushita Electric Industrial Co Ltd Semiconductor device
FR1475243A (fr) * 1965-04-07 1967-03-31 Matsushita Electric Industrial Co Ltd Dispositif semiconducteur
US3475661A (en) * 1966-02-09 1969-10-28 Sony Corp Semiconductor device including polycrystalline areas among monocrystalline areas
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
US3447235A (en) * 1967-07-21 1969-06-03 Raytheon Co Isolated cathode array semiconductor

Also Published As

Publication number Publication date
FR2025862A1 (enExample) 1970-09-11
NL6918519A (enExample) 1970-06-15
DE1961739A1 (de) 1970-06-18
US4009484A (en) 1977-02-22
JPS501513B1 (enExample) 1975-01-18

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Legal Events

Date Code Title Description
ST Notification of lapse