NL6918519A - - Google Patents

Info

Publication number
NL6918519A
NL6918519A NL6918519A NL6918519A NL6918519A NL 6918519 A NL6918519 A NL 6918519A NL 6918519 A NL6918519 A NL 6918519A NL 6918519 A NL6918519 A NL 6918519A NL 6918519 A NL6918519 A NL 6918519A
Authority
NL
Netherlands
Application number
NL6918519A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6918519A publication Critical patent/NL6918519A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
NL6918519A 1968-12-11 1969-12-10 NL6918519A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43090252A JPS501513B1 (xx) 1968-12-11 1968-12-11

Publications (1)

Publication Number Publication Date
NL6918519A true NL6918519A (xx) 1970-06-15

Family

ID=13993292

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6918519A NL6918519A (xx) 1968-12-11 1969-12-10

Country Status (5)

Country Link
US (1) US4009484A (xx)
JP (1) JPS501513B1 (xx)
DE (1) DE1961739A1 (xx)
FR (1) FR2025862B1 (xx)
NL (1) NL6918519A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294545A1 (fr) * 1974-12-09 1976-07-09 Ibm Procede de piegeage d'impuretes non desirees dans des dispositifs semiconducteurs et dispositifs en resultant

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1572703A (en) * 1975-12-10 1980-07-30 Tokyo Shibaura Electric Co Semiconductor device and method of producing a semiconductor device
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
US4184172A (en) * 1976-12-06 1980-01-15 Massachusetts Institute Of Technology Dielectric isolation using shallow oxide and polycrystalline silicon
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
US4262299A (en) * 1979-01-29 1981-04-14 Rca Corporation Semiconductor-on-insulator device and method for its manufacture
US4283235A (en) * 1979-07-27 1981-08-11 Massachusetts Institute Of Technology Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation
US4231819A (en) * 1979-07-27 1980-11-04 Massachusetts Institute Of Technology Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
JPH01289264A (ja) * 1988-05-17 1989-11-21 Toshiba Corp 半導体装置
DE4236300A1 (de) * 1992-10-28 1994-05-11 Telefunken Microelectron Verfahren zur Herstellung von Halbleiterbauelementen mit geringer Schaltzeit
KR0175000B1 (ko) * 1994-12-14 1999-02-01 윤종용 전자파 억제구조를 갖는 반도체 소자
JP4351869B2 (ja) * 2003-06-10 2009-10-28 隆 河東田 半導体を用いた電子デバイス
US7505309B2 (en) * 2005-04-20 2009-03-17 Micron Technology, Inc. Static RAM memory cell with DNR chalcogenide devices and method of forming

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145075A (en) * 1965-04-07 1969-03-12 Matsushita Electric Ind Co Ltd Semiconductor device
FR1475243A (fr) * 1965-04-07 1967-03-31 Matsushita Electric Ind Co Ltd Dispositif semiconducteur
US3475661A (en) * 1966-02-09 1969-10-28 Sony Corp Semiconductor device including polycrystalline areas among monocrystalline areas
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
US3447235A (en) * 1967-07-21 1969-06-03 Raytheon Co Isolated cathode array semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294545A1 (fr) * 1974-12-09 1976-07-09 Ibm Procede de piegeage d'impuretes non desirees dans des dispositifs semiconducteurs et dispositifs en resultant

Also Published As

Publication number Publication date
US4009484A (en) 1977-02-22
FR2025862B1 (xx) 1973-05-25
FR2025862A1 (xx) 1970-09-11
DE1961739A1 (de) 1970-06-18
JPS501513B1 (xx) 1975-01-18

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