FR2022876A1 - - Google Patents
Info
- Publication number
- FR2022876A1 FR2022876A1 FR6938190A FR6938190A FR2022876A1 FR 2022876 A1 FR2022876 A1 FR 2022876A1 FR 6938190 A FR6938190 A FR 6938190A FR 6938190 A FR6938190 A FR 6938190A FR 2022876 A1 FR2022876 A1 FR 2022876A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
- H01B3/306—Polyimides or polyesterimides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/307—Other macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77430268A | 1968-11-08 | 1968-11-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2022876A1 true FR2022876A1 (fr) | 1970-08-07 |
Family
ID=25100841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6938190A Withdrawn FR2022876A1 (fr) | 1968-11-08 | 1969-11-06 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3615913A (fr) |
JP (1) | JPS497995B1 (fr) |
BE (1) | BE741192A (fr) |
BR (1) | BR6913970D0 (fr) |
DE (1) | DE1955730A1 (fr) |
ES (1) | ES372779A1 (fr) |
FR (1) | FR2022876A1 (fr) |
GB (1) | GB1286086A (fr) |
NL (1) | NL6916814A (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2335044A1 (fr) * | 1975-12-11 | 1977-07-08 | Gen Electric | Element semi-conducteur passive au moyen d'un copolymere polyimide-silicone |
FR2335042A1 (fr) * | 1975-12-11 | 1977-07-08 | Gen Electric | Procede de traitement selectif d'une zone superficielle d'un element semi-conducteur |
FR2335960A1 (fr) * | 1975-12-18 | 1977-07-15 | Gen Electric | Element semi-conducteur perfectionne |
FR2339252A1 (fr) * | 1976-01-26 | 1977-08-19 | Gen Electric | Element semi-conducteur a revetement de protection perfectionne et solution pour la fabrication de ce revetement |
FR2461737A1 (fr) * | 1979-07-19 | 1981-02-06 | Upjohn Co | Nouveaux melanges d'un copolyimide et d'un copolyamide-imide et leur application a la production de films |
FR2473772A1 (fr) * | 1980-01-09 | 1981-07-17 | Hitachi Ltd | Dispositif de memoire a semi-conducteurs et procede pour le fabriquer |
EP0034455A2 (fr) * | 1980-02-13 | 1981-08-26 | Fujitsu Limited | Dispositif semiconducteur comprenant une couche de protection et procédé pour sa fabrication |
EP0029858A4 (fr) * | 1979-06-15 | 1982-12-09 | Fujitsu Ltd | Dispositif a semi-conducteur. |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2027105C3 (de) * | 1970-06-03 | 1981-03-26 | Robert Bosch Gmbh, 70469 Stuttgart | Verfahren zur Herstellung eines Halbleiterbauelements |
US4001870A (en) * | 1972-08-18 | 1977-01-04 | Hitachi, Ltd. | Isolating protective film for semiconductor devices and method for making the same |
US4017886A (en) * | 1972-10-18 | 1977-04-12 | Hitachi, Ltd. | Discrete semiconductor device having polymer resin as insulator and method for making the same |
DE2322347A1 (de) * | 1973-05-03 | 1974-11-14 | Siemens Ag | Verfahren zum herstellen eines halbleiterelementes mit isolierender schutzschicht |
JPS5067575A (fr) * | 1973-10-15 | 1975-06-06 | ||
US3916073A (en) * | 1974-03-11 | 1975-10-28 | Gen Instrument Corp | Process for passivating semiconductor surfaces and products thereof |
DE2442276A1 (de) * | 1974-09-04 | 1976-03-25 | Siemens Ag | Elektrooptischer wandler |
JPS6022497B2 (ja) * | 1974-10-26 | 1985-06-03 | ソニー株式会社 | 半導体装置 |
US3978426A (en) * | 1975-03-11 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterostructure devices including tapered optical couplers |
US4030948A (en) * | 1975-07-21 | 1977-06-21 | Abe Berger | Polyimide containing silicones as protective coating on semiconductor device |
US4017340A (en) * | 1975-08-04 | 1977-04-12 | General Electric Company | Semiconductor element having a polymeric protective coating and glass coating overlay |
US4040874A (en) * | 1975-08-04 | 1977-08-09 | General Electric Company | Semiconductor element having a polymeric protective coating and glass coating overlay |
US4198444A (en) * | 1975-08-04 | 1980-04-15 | General Electric Company | Method for providing substantially hermetic sealing means for electronic components |
GB1553243A (en) * | 1975-08-04 | 1979-09-26 | Gen Electric | Semiconductor |
US4140572A (en) * | 1976-09-07 | 1979-02-20 | General Electric Company | Process for selective etching of polymeric materials embodying silicones therein |
US4238528A (en) * | 1978-06-26 | 1980-12-09 | International Business Machines Corporation | Polyimide coating process and material |
CH661932A5 (en) * | 1978-09-18 | 1987-08-31 | Gen Electric | Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof |
US4535350A (en) * | 1981-10-29 | 1985-08-13 | National Semiconductor Corporation | Low-cost semiconductor device package and process |
US4468411A (en) * | 1982-04-05 | 1984-08-28 | Motorola, Inc. | Method for providing alpha particle protection for an integrated circuit die |
US4670325A (en) * | 1983-04-29 | 1987-06-02 | Ibm Corporation | Structure containing a layer consisting of a polyimide and an organic filled and method for producing such a structure |
JPS59204295A (ja) * | 1983-04-29 | 1984-11-19 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 金属回路構造体 |
US4603372A (en) * | 1984-11-05 | 1986-07-29 | Direction De La Meteorologie Du Ministere Des Transports | Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby |
US5026667A (en) * | 1987-12-29 | 1991-06-25 | Analog Devices, Incorporated | Producing integrated circuit chips with reduced stress effects |
US5144407A (en) * | 1989-07-03 | 1992-09-01 | General Electric Company | Semiconductor chip protection layer and protected chip |
KR0159287B1 (ko) * | 1991-01-24 | 1999-01-15 | 윤종용 | 실록산 변성 폴리이미드 수지의 제조방법 |
US5813881A (en) * | 1994-02-08 | 1998-09-29 | Prolinx Labs Corporation | Programmable cable and cable adapter using fuses and antifuses |
US5834824A (en) * | 1994-02-08 | 1998-11-10 | Prolinx Labs Corporation | Use of conductive particles in a nonconductive body as an integrated circuit antifuse |
US5808351A (en) * | 1994-02-08 | 1998-09-15 | Prolinx Labs Corporation | Programmable/reprogramable structure using fuses and antifuses |
US5917229A (en) * | 1994-02-08 | 1999-06-29 | Prolinx Labs Corporation | Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect |
US5962815A (en) * | 1995-01-18 | 1999-10-05 | Prolinx Labs Corporation | Antifuse interconnect between two conducting layers of a printed circuit board |
US5906042A (en) * | 1995-10-04 | 1999-05-25 | Prolinx Labs Corporation | Method and structure to interconnect traces of two conductive layers in a printed circuit board |
US5767575A (en) * | 1995-10-17 | 1998-06-16 | Prolinx Labs Corporation | Ball grid array structure and method for packaging an integrated circuit chip |
US5783452A (en) * | 1996-02-02 | 1998-07-21 | University Of Washington | Covered microchannels and the microfabrication thereof |
US5872338A (en) * | 1996-04-10 | 1999-02-16 | Prolinx Labs Corporation | Multilayer board having insulating isolation rings |
US6034427A (en) * | 1998-01-28 | 2000-03-07 | Prolinx Labs Corporation | Ball grid array structure and method for packaging an integrated circuit chip |
US6319604B1 (en) * | 1999-07-08 | 2001-11-20 | Phelps Dodge Industries, Inc. | Abrasion resistant coated wire |
US6914093B2 (en) | 2001-10-16 | 2005-07-05 | Phelps Dodge Industries, Inc. | Polyamideimide composition |
DE10253163B4 (de) * | 2002-11-14 | 2015-07-23 | Epcos Ag | Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung |
US7658709B2 (en) * | 2003-04-09 | 2010-02-09 | Medtronic, Inc. | Shape memory alloy actuators |
US7973122B2 (en) * | 2004-06-17 | 2011-07-05 | General Cable Technologies Corporation | Polyamideimide compositions having multifunctional core structures |
US20070151743A1 (en) * | 2006-01-03 | 2007-07-05 | Murray Thomas J | Abrasion resistant coated wire |
US20080193637A1 (en) * | 2006-01-03 | 2008-08-14 | Murray Thomas J | Abrasion resistant coated wire |
US7790501B2 (en) * | 2008-07-02 | 2010-09-07 | Ati Technologies Ulc | Semiconductor chip passivation structures and methods of making the same |
US7994044B2 (en) * | 2009-09-03 | 2011-08-09 | Ati Technologies Ulc | Semiconductor chip with contoured solder structure opening |
US8647974B2 (en) | 2011-03-25 | 2014-02-11 | Ati Technologies Ulc | Method of fabricating a semiconductor chip with supportive terminal pad |
JP2014192500A (ja) * | 2013-03-28 | 2014-10-06 | Shindengen Electric Mfg Co Ltd | メサ型半導体装置の製造方法 |
-
1968
- 1968-11-08 US US774302A patent/US3615913A/en not_active Expired - Lifetime
-
1969
- 1969-10-15 GB GB50667/69A patent/GB1286086A/en not_active Expired
- 1969-10-22 ES ES372779A patent/ES372779A1/es not_active Expired
- 1969-11-03 BE BE741192D patent/BE741192A/xx unknown
- 1969-11-06 FR FR6938190A patent/FR2022876A1/fr not_active Withdrawn
- 1969-11-06 DE DE19691955730 patent/DE1955730A1/de active Pending
- 1969-11-06 BR BR213970/69A patent/BR6913970D0/pt unknown
- 1969-11-07 NL NL6916814A patent/NL6916814A/xx unknown
- 1969-11-07 JP JP44088819A patent/JPS497995B1/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2335044A1 (fr) * | 1975-12-11 | 1977-07-08 | Gen Electric | Element semi-conducteur passive au moyen d'un copolymere polyimide-silicone |
FR2335042A1 (fr) * | 1975-12-11 | 1977-07-08 | Gen Electric | Procede de traitement selectif d'une zone superficielle d'un element semi-conducteur |
FR2335960A1 (fr) * | 1975-12-18 | 1977-07-15 | Gen Electric | Element semi-conducteur perfectionne |
FR2339252A1 (fr) * | 1976-01-26 | 1977-08-19 | Gen Electric | Element semi-conducteur a revetement de protection perfectionne et solution pour la fabrication de ce revetement |
EP0029858A4 (fr) * | 1979-06-15 | 1982-12-09 | Fujitsu Ltd | Dispositif a semi-conducteur. |
FR2461737A1 (fr) * | 1979-07-19 | 1981-02-06 | Upjohn Co | Nouveaux melanges d'un copolyimide et d'un copolyamide-imide et leur application a la production de films |
FR2473772A1 (fr) * | 1980-01-09 | 1981-07-17 | Hitachi Ltd | Dispositif de memoire a semi-conducteurs et procede pour le fabriquer |
EP0034455A2 (fr) * | 1980-02-13 | 1981-08-26 | Fujitsu Limited | Dispositif semiconducteur comprenant une couche de protection et procédé pour sa fabrication |
EP0034455A3 (en) * | 1980-02-13 | 1982-08-04 | Fujitsu Limited | Semiconductor device having a protective layer, and method for producing it |
Also Published As
Publication number | Publication date |
---|---|
BE741192A (fr) | 1970-04-16 |
US3615913A (en) | 1971-10-26 |
GB1286086A (en) | 1972-08-16 |
DE1955730A1 (de) | 1970-06-04 |
NL6916814A (fr) | 1970-05-12 |
BR6913970D0 (pt) | 1973-01-11 |
ES372779A1 (es) | 1971-11-01 |
JPS497995B1 (fr) | 1974-02-23 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |