FR2001970A1 - - Google Patents

Info

Publication number
FR2001970A1
FR2001970A1 FR6903687A FR6903687A FR2001970A1 FR 2001970 A1 FR2001970 A1 FR 2001970A1 FR 6903687 A FR6903687 A FR 6903687A FR 6903687 A FR6903687 A FR 6903687A FR 2001970 A1 FR2001970 A1 FR 2001970A1
Authority
FR
France
Prior art keywords
glass
ceramic
conductors
holes
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6903687A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
English Electric Co Ltd
Original Assignee
English Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by English Electric Co Ltd filed Critical English Electric Co Ltd
Publication of FR2001970A1 publication Critical patent/FR2001970A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W70/6875—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10W40/10—
    • H10W40/47—
    • H10W70/611—
    • H10W70/635—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/59—
    • H10W72/884—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
FR6903687A 1968-02-15 1969-02-14 Withdrawn FR2001970A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB750768 1968-02-15

Publications (1)

Publication Number Publication Date
FR2001970A1 true FR2001970A1 (enExample) 1969-10-03

Family

ID=9834448

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6903687A Withdrawn FR2001970A1 (enExample) 1968-02-15 1969-02-14

Country Status (4)

Country Link
DE (1) DE1907567A1 (enExample)
FR (1) FR2001970A1 (enExample)
GB (1) GB1232621A (enExample)
NL (1) NL6902359A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4074342A (en) * 1974-12-20 1978-02-14 International Business Machines Corporation Electrical package for lsi devices and assembly process therefor

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2111312A (en) * 1981-11-04 1983-06-29 Philips Electronic Associated Substrates for electrical circuits
US4570337A (en) * 1982-04-19 1986-02-18 Olin Corporation Method of assembling a chip carrier
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
EP0139029A1 (en) * 1983-10-19 1985-05-02 Olin Corporation Improved semiconductor package
US4862323A (en) * 1984-04-12 1989-08-29 Olin Corporation Chip carrier
US4853491A (en) * 1984-10-03 1989-08-01 Olin Corporation Chip carrier
US4840654A (en) * 1985-03-04 1989-06-20 Olin Corporation Method for making multi-layer and pin grid arrays
US4712161A (en) * 1985-03-25 1987-12-08 Olin Corporation Hybrid and multi-layer circuitry
US4696851A (en) * 1985-03-25 1987-09-29 Olin Corporation Hybrid and multi-layer circuitry
US4821151A (en) * 1985-12-20 1989-04-11 Olin Corporation Hermetically sealed package
US4687540A (en) * 1985-12-20 1987-08-18 Olin Corporation Method of manufacturing glass capacitors and resulting product
US4725333A (en) * 1985-12-20 1988-02-16 Olin Corporation Metal-glass laminate and process for producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4074342A (en) * 1974-12-20 1978-02-14 International Business Machines Corporation Electrical package for lsi devices and assembly process therefor

Also Published As

Publication number Publication date
GB1232621A (enExample) 1971-05-19
NL6902359A (enExample) 1969-08-19
DE1907567A1 (de) 1969-09-18

Similar Documents

Publication Publication Date Title
FR2001970A1 (enExample)
JP3267299B2 (ja) セラミック回路基板支持基板用電気フィードスルー
US3568012A (en) A microminiature circuit device employing a low thermal expansion binder
EP0806056B1 (en) Glass bonding layer for a ceramic circuit board support substrate
US5256469A (en) Multi-layered, co-fired, ceramic-on-metal circuit board for microelectronic packaging
JPH0213958B2 (enExample)
US4547625A (en) Glass multilayer wiring board and method for its manufacture
US4739443A (en) Thermally conductive module
US5277724A (en) Method of minimizing lateral shrinkage in a co-fired, ceramic-on-metal circuit board
US3694699A (en) Ceramic based substrates for electronic circuits with improved heat dissipating properties and circuits including the same
KR0174635B1 (ko) 세라믹 다층 기판과 이것의 제조방법
JPS63107095A (ja) 多層セラミツク回路基板
JPH0529160B2 (enExample)
JPH0447978B2 (enExample)
US4927711A (en) Hybrid circuits and thick film dielectrics used therein
GB2263253A (en) Ceramic on metal circuit board
JPH0568877B2 (enExample)
JPH0217957B2 (enExample)
GB2144922A (en) Substrate for thick-film electrical circuits
JPH0416039B2 (enExample)
JPH02177589A (ja) セラミック回路基板
JPS59162169A (ja) セラミック多層配線板
JPS60178655A (ja) リ−ドフレ−ム
Krokoszinski et al. Additive thin film technology for hybrid circuit fabrication
JPS59208892A (ja) メタルコア・プリント基板の構造

Legal Events

Date Code Title Description
ST Notification of lapse