FR1548847A - - Google Patents

Info

Publication number
FR1548847A
FR1548847A FR1548847DA FR1548847A FR 1548847 A FR1548847 A FR 1548847A FR 1548847D A FR1548847D A FR 1548847DA FR 1548847 A FR1548847 A FR 1548847A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1548847A publication Critical patent/FR1548847A/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P14/69215
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • H10P14/6328
    • H10P14/6334
    • H10P14/662
    • H10P14/6929
    • H10P14/69391

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR1548847D 1967-01-13 1967-12-07 Expired FR1548847A (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60920067A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
FR1548847A true FR1548847A (show.php) 1968-12-06

Family

ID=24439760

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1548847D Expired FR1548847A (show.php) 1967-01-13 1967-12-07

Country Status (8)

Country Link
JP (2) JPS4945627B1 (show.php)
BE (1) BE706603A (show.php)
CH (1) CH487506A (show.php)
DE (1) DE1621272C3 (show.php)
FR (1) FR1548847A (show.php)
GB (1) GB1173097A (show.php)
NL (1) NL168369C (show.php)
SE (1) SE365651B (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2003163A1 (fr) * 1968-03-04 1969-11-07 Hitachi Ltd Dispositif a semi-conducteur et son procede de fabrication

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356729U (show.php) * 1976-10-18 1978-05-15
JPS53129436U (show.php) * 1977-03-18 1978-10-14
JPS5477639U (show.php) * 1977-11-14 1979-06-02
DE3330865A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstraten unter anwendung einer cvd-beschichtungstechnik
DE3330864A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstrate unter anwendung einer cvd-beschichtungstechnik
GB2268327A (en) * 1992-06-30 1994-01-05 Texas Instruments Ltd Passivated gallium arsenide device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2003163A1 (fr) * 1968-03-04 1969-11-07 Hitachi Ltd Dispositif a semi-conducteur et son procede de fabrication

Also Published As

Publication number Publication date
JPS4945628B1 (show.php) 1974-12-05
NL168369C (nl) 1982-03-16
BE706603A (show.php) 1968-04-01
DE1621272B2 (de) 1977-03-31
NL6800382A (show.php) 1968-07-15
CH487506A (de) 1970-03-15
DE1621272C3 (de) 1979-08-23
NL168369B (nl) 1981-10-16
SE365651B (show.php) 1974-03-25
DE1621272A1 (de) 1971-04-29
JPS4945627B1 (show.php) 1974-12-05
GB1173097A (en) 1969-12-03

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Legal Events

Date Code Title Description
ST Notification of lapse