FR1520515A - Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication - Google Patents

Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication

Info

Publication number
FR1520515A
FR1520515A FR93984A FR93984A FR1520515A FR 1520515 A FR1520515 A FR 1520515A FR 93984 A FR93984 A FR 93984A FR 93984 A FR93984 A FR 93984A FR 1520515 A FR1520515 A FR 1520515A
Authority
FR
France
Prior art keywords
making
methods
integrated circuits
opposite types
circuits incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR93984A
Other languages
English (en)
French (fr)
Inventor
Jean-Claude Frouin
Michel De Brebisson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RADIOTECHNIQUE COPRIM RTC
Original Assignee
RADIOTECHNIQUE COPRIM RTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RADIOTECHNIQUE COPRIM RTC filed Critical RADIOTECHNIQUE COPRIM RTC
Priority to FR93984A priority Critical patent/FR1520515A/fr
Priority to DE19681639353 priority patent/DE1639353C3/de
Priority to CH165968A priority patent/CH469363A/de
Priority to GB5597/68A priority patent/GB1211117A/en
Priority to SE01483/68A priority patent/SE325963B/xx
Priority to US703043A priority patent/US3562032A/en
Priority to NL6801631A priority patent/NL6801631A/xx
Priority to BE710403D priority patent/BE710403A/xx
Priority to AT111868A priority patent/AT307502B/de
Application granted granted Critical
Publication of FR1520515A publication Critical patent/FR1520515A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR93984A 1967-02-07 1967-02-07 Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication Expired FR1520515A (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR93984A FR1520515A (fr) 1967-02-07 1967-02-07 Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication
DE19681639353 DE1639353C3 (de) 1967-02-07 1968-02-03 Verfahren zur Herstellung einer integrierten Halbleiteranordnung
GB5597/68A GB1211117A (en) 1967-02-07 1968-02-05 Integrated semiconductor devices
SE01483/68A SE325963B (OSRAM) 1967-02-07 1968-02-05
CH165968A CH469363A (de) 1967-02-07 1968-02-05 Verfahren zur Herstellung einer integrierten Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
US703043A US3562032A (en) 1967-02-07 1968-02-05 Method of manufacturing an integrated semiconductor device
NL6801631A NL6801631A (OSRAM) 1967-02-07 1968-02-06
BE710403D BE710403A (OSRAM) 1967-02-07 1968-02-06
AT111868A AT307502B (de) 1967-02-07 1968-02-06 Verfahren zur Herstellung einer integrierten Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR93984A FR1520515A (fr) 1967-02-07 1967-02-07 Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication

Publications (1)

Publication Number Publication Date
FR1520515A true FR1520515A (fr) 1968-04-12

Family

ID=8624922

Family Applications (1)

Application Number Title Priority Date Filing Date
FR93984A Expired FR1520515A (fr) 1967-02-07 1967-02-07 Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication

Country Status (8)

Country Link
US (1) US3562032A (OSRAM)
AT (1) AT307502B (OSRAM)
BE (1) BE710403A (OSRAM)
CH (1) CH469363A (OSRAM)
FR (1) FR1520515A (OSRAM)
GB (1) GB1211117A (OSRAM)
NL (1) NL6801631A (OSRAM)
SE (1) SE325963B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1964979A1 (de) * 1969-01-11 1970-07-23 Philips Nv Halbleitervorrichtung mit einem lateralen Transistor
FR2038223A1 (OSRAM) * 1969-04-03 1971-01-08 Motorola Inc

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638476B2 (ja) * 1984-11-05 1994-05-18 ソニー株式会社 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1964979A1 (de) * 1969-01-11 1970-07-23 Philips Nv Halbleitervorrichtung mit einem lateralen Transistor
FR2038223A1 (OSRAM) * 1969-04-03 1971-01-08 Motorola Inc

Also Published As

Publication number Publication date
SE325963B (OSRAM) 1970-07-13
US3562032A (en) 1971-02-09
NL6801631A (OSRAM) 1968-08-08
AT307502B (de) 1973-05-25
BE710403A (OSRAM) 1968-08-06
GB1211117A (en) 1970-11-04
CH469363A (de) 1969-02-28
DE1639353B2 (de) 1976-04-08
DE1639353A1 (de) 1971-02-04

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