FR1498908A - Perfectionnements apportés aux semi-conducteurs à résistance fonction de la tension, et plus particulièrement aux diodes de zener - Google Patents

Perfectionnements apportés aux semi-conducteurs à résistance fonction de la tension, et plus particulièrement aux diodes de zener

Info

Publication number
FR1498908A
FR1498908A FR82931A FR82931A FR1498908A FR 1498908 A FR1498908 A FR 1498908A FR 82931 A FR82931 A FR 82931A FR 82931 A FR82931 A FR 82931A FR 1498908 A FR1498908 A FR 1498908A
Authority
FR
France
Prior art keywords
voltage
zener diodes
dependent resistance
resistance semiconductors
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR82931A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Application granted granted Critical
Publication of FR1498908A publication Critical patent/FR1498908A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/866Zener diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12035Zener diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR82931A 1965-11-09 1966-11-08 Perfectionnements apportés aux semi-conducteurs à résistance fonction de la tension, et plus particulièrement aux diodes de zener Expired FR1498908A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED0048608 1965-11-09

Publications (1)

Publication Number Publication Date
FR1498908A true FR1498908A (fr) 1967-10-20

Family

ID=7051302

Family Applications (1)

Application Number Title Priority Date Filing Date
FR82931A Expired FR1498908A (fr) 1965-11-09 1966-11-08 Perfectionnements apportés aux semi-conducteurs à résistance fonction de la tension, et plus particulièrement aux diodes de zener

Country Status (9)

Country Link
AT (1) AT265370B (fr)
BE (1) BE688709A (fr)
CH (1) CH455053A (fr)
DE (1) DE1489809B2 (fr)
DK (1) DK117440B (fr)
FR (1) FR1498908A (fr)
GB (1) GB1158120A (fr)
NL (1) NL6615110A (fr)
SE (1) SE316840B (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030175A1 (fr) * 1969-01-22 1970-10-30 Tokyo Shibaura Electric Co
FR2405576A1 (fr) * 1977-10-07 1979-05-04 Lignes Telegraph Telephon Circuit de protection d'une diode schottky de puissance contre les surtensions inverses transitoires
EP1605518A2 (fr) 2004-06-10 2005-12-14 LG Electronics, Inc. Diode Zener et procédé pour sa fabrication
EP1615268A3 (fr) * 2004-07-09 2008-09-03 LG Electronics, Inc. Substrat pour le montage d'un dispositif émetteur de lumière et méthode pour sa fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2505070B1 (fr) * 1981-01-16 1986-04-04 Suwa Seikosha Kk Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage
DE3136730A1 (de) * 1981-09-16 1983-03-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterdiode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030175A1 (fr) * 1969-01-22 1970-10-30 Tokyo Shibaura Electric Co
FR2405576A1 (fr) * 1977-10-07 1979-05-04 Lignes Telegraph Telephon Circuit de protection d'une diode schottky de puissance contre les surtensions inverses transitoires
EP1605518A2 (fr) 2004-06-10 2005-12-14 LG Electronics, Inc. Diode Zener et procédé pour sa fabrication
EP1605518A3 (fr) * 2004-06-10 2006-09-06 LG Electronics, Inc. Diode Zener et procédé pour sa fabrication
CN100466202C (zh) * 2004-06-10 2009-03-04 Lg电子有限公司 齐纳二极管及其制造方法
EP1615268A3 (fr) * 2004-07-09 2008-09-03 LG Electronics, Inc. Substrat pour le montage d'un dispositif émetteur de lumière et méthode pour sa fabrication

Also Published As

Publication number Publication date
AT265370B (de) 1968-10-10
GB1158120A (en) 1969-07-16
SE316840B (fr) 1969-11-03
CH455053A (de) 1968-04-30
DK117440B (da) 1970-04-27
NL6615110A (fr) 1967-05-10
BE688709A (fr) 1967-03-31
DE1489809A1 (de) 1970-10-01
DE1489809B2 (de) 1974-07-04

Similar Documents

Publication Publication Date Title
NL160117C (nl) Variabele weerstandsinrichting.
CH435600A (de) Sitzvorrichtung an Sesseln, Stühlen und anderen Sitzeinrichtungen
FR1445041A (fr) Résistance à chute brusque de valeur ohmique
FR1478378A (fr) Alternateur à courant redressé
FR1498908A (fr) Perfectionnements apportés aux semi-conducteurs à résistance fonction de la tension, et plus particulièrement aux diodes de zener
NL142280B (nl) Gelijkrichtereenheid met ten minste twee in serie geschakelde gelijkrichters.
FR1518278A (fr) Contrôle de la résistance d'interface
AT266597B (de) Kinematographisches Gerät, insbesondere Wiedergabegerät
FR1514180A (fr) Perfectionnements aux diodes semi-conductrices électroluminescentes
NL155401B (nl) Weerstandslasinrichting.
FR1513217A (fr) Elément résistant et résistance variable
NL150268B (nl) Schakeling met een bestuurbare halfgeleidergelijkrichter en bestuurbare halfgeleidergelijkrichter.
CH479954A (fr) Dispositif semiconducteur à résistance négative
CH423939A (fr) Résistance diffusée dans un circuit intégré
NL162252B (nl) Halfgeleiderinrichting, waarvan de stroomspannings- karakteristiek een gedeelte met negatieve weerstand bevat.
FR1434692A (fr) Dispositif de quantification numérique à diodes
DK122148B (da) Højt belastelig trådmodstand.
FR1401207A (fr) élément semi-conducteur à résistance négative
AT259832B (de) Bauelement, insbesondere Brüstungselement
AT268383B (de) Elektrisches Schaltelement, insbesondere Halbleitervorrichtung
FR1522532A (fr) Perfectionnements aux diodes zener
FR1403284A (fr) Perfectionnement au soudage par résistance
FR85018E (fr) élément semi-conducteur à résistance inverse contrôlée
ES140546Y (es) Dispositivo unitario que asegura la proteccion, el aisla- miento y la atraccion especialmente para herramientas manua-les.
FR1477619A (fr) Circuit de conditionnement à diodes et condensateur