CH479954A - Dispositif semiconducteur à résistance négative - Google Patents

Dispositif semiconducteur à résistance négative

Info

Publication number
CH479954A
CH479954A CH548468A CH548468A CH479954A CH 479954 A CH479954 A CH 479954A CH 548468 A CH548468 A CH 548468A CH 548468 A CH548468 A CH 548468A CH 479954 A CH479954 A CH 479954A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
negative resistance
resistance semiconductor
negative
semiconductor
Prior art date
Application number
CH548468A
Other languages
English (en)
Inventor
Teszner Stanislas
Durand Paul
Morel Philippe
Briere Pierre
Original Assignee
Teszner Stanislas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teszner Stanislas filed Critical Teszner Stanislas
Publication of CH479954A publication Critical patent/CH479954A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CH548468A 1967-04-11 1968-04-11 Dispositif semiconducteur à résistance négative CH479954A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR102277A FR92860E (fr) 1960-09-15 1967-04-11 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons a résistance négative et aux procédés de leur fabrication.

Publications (1)

Publication Number Publication Date
CH479954A true CH479954A (fr) 1969-10-15

Family

ID=8628599

Family Applications (1)

Application Number Title Priority Date Filing Date
CH548468A CH479954A (fr) 1967-04-11 1968-04-11 Dispositif semiconducteur à résistance négative

Country Status (6)

Country Link
US (1) US3482151A (fr)
CH (1) CH479954A (fr)
DE (1) DE1764152B2 (fr)
FR (1) FR92860E (fr)
GB (1) GB1168219A (fr)
NL (1) NL159234B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226744A1 (de) * 1992-08-13 1994-02-17 Vulkan Harex Stahlfasertech Faser zur Bewehrung von Beton oder dergleichen aus Draht oder Flachband und Einrichtung zum Herstellen solcher Fasern

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651489A (en) * 1970-01-22 1972-03-21 Itt Secondary emission field effect charge storage system
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
DE19548443A1 (de) * 1995-12-22 1997-06-26 Siemens Ag Halbleiteranordnung zur Strombegrenzung
DE19726678A1 (de) * 1997-06-24 1999-01-07 Siemens Ag Passiver Halbleiterstrombegrenzer
DE19717614A1 (de) 1997-04-25 1998-10-29 Siemens Ag Passiver Halbleiterstrombegrenzer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226744A1 (de) * 1992-08-13 1994-02-17 Vulkan Harex Stahlfasertech Faser zur Bewehrung von Beton oder dergleichen aus Draht oder Flachband und Einrichtung zum Herstellen solcher Fasern

Also Published As

Publication number Publication date
GB1168219A (en) 1969-10-22
US3482151A (en) 1969-12-02
DE1764152B2 (de) 1977-10-06
NL159234B (nl) 1979-01-15
FR92860E (fr) 1969-01-10
DE1764152A1 (de) 1971-05-13
NL6805190A (fr) 1968-10-14

Similar Documents

Publication Publication Date Title
CH466873A (de) Integrierte Halbleitervorrichtung
BE832623Q (fr) Dispositif marqueur
CH496322A (de) Halbleitervorrichtung
FR1473738A (fr) Dispositif à semi-conducteurs
AT300039B (de) Halbleitereinrichtung
FR96113E (fr) Dispositif semi-conducteur.
FR1244613A (fr) Dispositif semi-conducteur à résistance négative
CH485322A (de) Halbleitervorrichtung
CH479954A (fr) Dispositif semiconducteur à résistance négative
FR1510752A (fr) Dispositif à semi-conducteurs
FR1486215A (fr) Dispositif à semi-conducteur
FR1515458A (fr) Dispositif redresseur à semi-conducteurs en parallèle
AT306103B (de) Halbleitereinrichtung
CH468080A (de) Halbleitervorrichtung
CH471467A (fr) Dispositif redresseur à semi-conducteur
AT297102B (de) Halbleitervorrichtung
CH500587A (de) Halbleitervorrichtung
CH502696A (de) Halbleitervorrichtung
FR1498176A (fr) Dispositif optoélectronique à semi-conducteurs
FR1546423A (fr) Dispositif à semi-conducteur
AT280352B (de) Halbleitervorrichtung
FR1541894A (fr) Dispositif à semi-conducteurs
FR1475201A (fr) Dispositif plan à semi-conducteurs
FR1529195A (fr) Dispositif à semi-conducteur
NL143735B (nl) Geintegreerde halfgeleiderinrichting.

Legal Events

Date Code Title Description
PL Patent ceased