GB1158120A - Improvements in or relating to Semiconductor Diodes - Google Patents
Improvements in or relating to Semiconductor DiodesInfo
- Publication number
- GB1158120A GB1158120A GB4607466A GB4607466A GB1158120A GB 1158120 A GB1158120 A GB 1158120A GB 4607466 A GB4607466 A GB 4607466A GB 4607466 A GB4607466 A GB 4607466A GB 1158120 A GB1158120 A GB 1158120A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- semi
- relating
- semiconductor diodes
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12035—Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
Abstract
1,158,120. Semi-conductor devices. DANFOSS A.S. 14 Oct., 1966 [9 Nov., 1965], No. 46074/66. Heading H1K. A diode consists of a semi-conductor body clamped between two electrodes each of which forms a Schottky barrier with it. The preferred arrangement with two pairs of back to back Zener diodes in series is formed by assembling a double sandwich consisting of gallium arsenide bodies 11, 12, Fig. 1, and graphite members 12, 13 and 14 and holding it under pressure while the ends of an enclosing glass tube are sealed over the shoulders of end members 13, 14. The use of silicon and indium phosphide as semiconductors and molybdenum and silver for the electrodes is also suggested.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED0048608 | 1965-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1158120A true GB1158120A (en) | 1969-07-16 |
Family
ID=7051302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4607466A Expired GB1158120A (en) | 1965-11-09 | 1966-10-14 | Improvements in or relating to Semiconductor Diodes |
Country Status (9)
| Country | Link |
|---|---|
| AT (1) | AT265370B (en) |
| BE (1) | BE688709A (en) |
| CH (1) | CH455053A (en) |
| DE (1) | DE1489809B2 (en) |
| DK (1) | DK117440B (en) |
| FR (1) | FR1498908A (en) |
| GB (1) | GB1158120A (en) |
| NL (1) | NL6615110A (en) |
| SE (1) | SE316840B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1276791A (en) * | 1969-01-22 | 1972-06-07 | Tokyo Shibaura Electric Co | Semiconductor device |
| FR2405576A1 (en) * | 1977-10-07 | 1979-05-04 | Lignes Telegraph Telephon | Protective circuit for Schottky power diode - uses parallel-low power Schottky diode whose avalanche voltage is lower than limit voltage of main diode |
| FR2505070B1 (en) * | 1981-01-16 | 1986-04-04 | Suwa Seikosha Kk | NON-LINEAR DEVICE FOR A LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR MANUFACTURING SUCH A DISPLAY PANEL |
| DE3136730A1 (en) * | 1981-09-16 | 1983-03-31 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor diode |
| KR101116766B1 (en) | 2004-06-10 | 2012-02-22 | 엘지전자 주식회사 | Production Method of Zenor Diode |
| KR100927256B1 (en) * | 2004-07-09 | 2009-11-16 | 엘지전자 주식회사 | Method of fabricating a zener diode integrated sub-mount |
-
1965
- 1965-11-09 DE DE1489809A patent/DE1489809B2/en not_active Ceased
-
1966
- 1966-10-13 AT AT960466A patent/AT265370B/en active
- 1966-10-14 GB GB4607466A patent/GB1158120A/en not_active Expired
- 1966-10-21 CH CH1541466A patent/CH455053A/en unknown
- 1966-10-21 BE BE688709D patent/BE688709A/xx unknown
- 1966-10-25 NL NL6615110A patent/NL6615110A/xx unknown
- 1966-11-07 SE SE1519466A patent/SE316840B/xx unknown
- 1966-11-08 FR FR82931A patent/FR1498908A/en not_active Expired
- 1966-11-09 DK DK580466A patent/DK117440B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1489809A1 (en) | 1970-10-01 |
| CH455053A (en) | 1968-04-30 |
| BE688709A (en) | 1967-03-31 |
| DK117440B (en) | 1970-04-27 |
| SE316840B (en) | 1969-11-03 |
| DE1489809B2 (en) | 1974-07-04 |
| NL6615110A (en) | 1967-05-10 |
| AT265370B (en) | 1968-10-10 |
| FR1498908A (en) | 1967-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |