FR1427316A - Procédé pour fabriquer des dispositifs à semi-conducteurs - Google Patents

Procédé pour fabriquer des dispositifs à semi-conducteurs

Info

Publication number
FR1427316A
FR1427316A FR6845A FR6845A FR1427316A FR 1427316 A FR1427316 A FR 1427316A FR 6845 A FR6845 A FR 6845A FR 6845 A FR6845 A FR 6845A FR 1427316 A FR1427316 A FR 1427316A
Authority
FR
France
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6845A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1427316A publication Critical patent/FR1427316A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/017Clean surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR6845A 1964-02-26 1965-02-24 Procédé pour fabriquer des dispositifs à semi-conducteurs Expired FR1427316A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0089690 1964-02-26

Publications (1)

Publication Number Publication Date
FR1427316A true FR1427316A (fr) 1966-02-04

Family

ID=7515285

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6845A Expired FR1427316A (fr) 1964-02-26 1965-02-24 Procédé pour fabriquer des dispositifs à semi-conducteurs

Country Status (4)

Country Link
US (1) US3506508A (en, 2012)
FR (1) FR1427316A (en, 2012)
GB (1) GB1046157A (en, 2012)
NL (1) NL6501786A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2184995A1 (en, 2012) * 1972-05-18 1973-12-28 Matsushita Electric Ind Co Ltd
EP0001373A1 (fr) * 1977-09-08 1979-04-04 International Business Machines Corporation Procédé de dépôt de films de carbure de silicium lisses, et sans trous d'épingle sur un substrat de silicium

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2947818B2 (ja) * 1988-07-27 1999-09-13 株式会社日立製作所 微細孔への金属穴埋め方法
AU5977190A (en) * 1989-07-27 1991-01-31 Nishizawa, Junichi Impurity doping method with adsorbed diffusion source
EP0410390A3 (en) * 1989-07-27 1993-02-24 Seiko Instruments Inc. Method of producing semiconductor device
EP0417456A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing semiconductor device
JP2906260B2 (ja) * 1989-12-01 1999-06-14 セイコーインスツルメンツ株式会社 Pn接合素子の製造方法
CA2031253A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
JP2928930B2 (ja) * 1989-12-06 1999-08-03 セイコーインスツルメンツ株式会社 不純物ドーピング装置
US5366922A (en) * 1989-12-06 1994-11-22 Seiko Instruments Inc. Method for producing CMOS transistor
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
JPH06232141A (ja) * 1992-12-07 1994-08-19 Sony Corp 半導体基板の作成方法及び固体撮像装置の製造方法
US5354698A (en) * 1993-07-19 1994-10-11 Micron Technology, Inc. Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process
US6413874B1 (en) * 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
BE550586A (en, 2012) * 1955-12-02
US3328199A (en) * 1960-01-15 1967-06-27 Siemens Ag Method of producing monocrystalline silicon of high purity
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2184995A1 (en, 2012) * 1972-05-18 1973-12-28 Matsushita Electric Ind Co Ltd
EP0001373A1 (fr) * 1977-09-08 1979-04-04 International Business Machines Corporation Procédé de dépôt de films de carbure de silicium lisses, et sans trous d'épingle sur un substrat de silicium

Also Published As

Publication number Publication date
US3506508A (en) 1970-04-14
NL6501786A (en, 2012) 1965-08-27
GB1046157A (en) 1966-10-19

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