FR1427316A - Procédé pour fabriquer des dispositifs à semi-conducteurs - Google Patents
Procédé pour fabriquer des dispositifs à semi-conducteursInfo
- Publication number
- FR1427316A FR1427316A FR6845A FR6845A FR1427316A FR 1427316 A FR1427316 A FR 1427316A FR 6845 A FR6845 A FR 6845A FR 6845 A FR6845 A FR 6845A FR 1427316 A FR1427316 A FR 1427316A
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0089690 | 1964-02-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1427316A true FR1427316A (fr) | 1966-02-04 |
Family
ID=7515285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6845A Expired FR1427316A (fr) | 1964-02-26 | 1965-02-24 | Procédé pour fabriquer des dispositifs à semi-conducteurs |
Country Status (4)
Country | Link |
---|---|
US (1) | US3506508A (en, 2012) |
FR (1) | FR1427316A (en, 2012) |
GB (1) | GB1046157A (en, 2012) |
NL (1) | NL6501786A (en, 2012) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2184995A1 (en, 2012) * | 1972-05-18 | 1973-12-28 | Matsushita Electric Ind Co Ltd | |
EP0001373A1 (fr) * | 1977-09-08 | 1979-04-04 | International Business Machines Corporation | Procédé de dépôt de films de carbure de silicium lisses, et sans trous d'épingle sur un substrat de silicium |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2947818B2 (ja) * | 1988-07-27 | 1999-09-13 | 株式会社日立製作所 | 微細孔への金属穴埋め方法 |
AU5977190A (en) * | 1989-07-27 | 1991-01-31 | Nishizawa, Junichi | Impurity doping method with adsorbed diffusion source |
EP0410390A3 (en) * | 1989-07-27 | 1993-02-24 | Seiko Instruments Inc. | Method of producing semiconductor device |
EP0417456A3 (en) * | 1989-08-11 | 1991-07-03 | Seiko Instruments Inc. | Method of producing semiconductor device |
JP2906260B2 (ja) * | 1989-12-01 | 1999-06-14 | セイコーインスツルメンツ株式会社 | Pn接合素子の製造方法 |
CA2031253A1 (en) * | 1989-12-01 | 1991-06-02 | Kenji Aoki | Method of producing bipolar transistor |
JP2928930B2 (ja) * | 1989-12-06 | 1999-08-03 | セイコーインスツルメンツ株式会社 | 不純物ドーピング装置 |
US5366922A (en) * | 1989-12-06 | 1994-11-22 | Seiko Instruments Inc. | Method for producing CMOS transistor |
EP0505877A2 (en) * | 1991-03-27 | 1992-09-30 | Seiko Instruments Inc. | Impurity doping method with adsorbed diffusion source |
JPH06232141A (ja) * | 1992-12-07 | 1994-08-19 | Sony Corp | 半導体基板の作成方法及び固体撮像装置の製造方法 |
US5354698A (en) * | 1993-07-19 | 1994-10-11 | Micron Technology, Inc. | Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process |
US6413874B1 (en) * | 1997-12-26 | 2002-07-02 | Canon Kabushiki Kaisha | Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE966879C (de) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
BE550586A (en, 2012) * | 1955-12-02 | |||
US3328199A (en) * | 1960-01-15 | 1967-06-27 | Siemens Ag | Method of producing monocrystalline silicon of high purity |
US3243323A (en) * | 1962-06-11 | 1966-03-29 | Motorola Inc | Gas etching |
-
1965
- 1965-02-12 NL NL6501786A patent/NL6501786A/xx unknown
- 1965-02-24 FR FR6845A patent/FR1427316A/fr not_active Expired
- 1965-02-25 US US435239A patent/US3506508A/en not_active Expired - Lifetime
- 1965-02-25 GB GB8106/65A patent/GB1046157A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2184995A1 (en, 2012) * | 1972-05-18 | 1973-12-28 | Matsushita Electric Ind Co Ltd | |
EP0001373A1 (fr) * | 1977-09-08 | 1979-04-04 | International Business Machines Corporation | Procédé de dépôt de films de carbure de silicium lisses, et sans trous d'épingle sur un substrat de silicium |
Also Published As
Publication number | Publication date |
---|---|
US3506508A (en) | 1970-04-14 |
NL6501786A (en, 2012) | 1965-08-27 |
GB1046157A (en) | 1966-10-19 |
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