FR1230530A - Procédé de fabrication d'éléments semi-conducteurs, de préférence à base de germanium ou de silicium - Google Patents

Procédé de fabrication d'éléments semi-conducteurs, de préférence à base de germanium ou de silicium

Info

Publication number
FR1230530A
FR1230530A FR790393A FR790393A FR1230530A FR 1230530 A FR1230530 A FR 1230530A FR 790393 A FR790393 A FR 790393A FR 790393 A FR790393 A FR 790393A FR 1230530 A FR1230530 A FR 1230530A
Authority
FR
France
Prior art keywords
germanium
silicon
semiconductor elements
manufacturing semiconductor
preferably based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR790393A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1230530A publication Critical patent/FR1230530A/fr
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49799—Providing transitory integral holding or handling portion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4981—Utilizing transitory attached element or associated separate material
    • Y10T29/49812—Temporary protective coating, impregnation, or cast layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0405—With preparatory or simultaneous ancillary treatment of work

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR790393A 1958-03-26 1959-03-25 Procédé de fabrication d'éléments semi-conducteurs, de préférence à base de germanium ou de silicium Expired FR1230530A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0057549 1958-03-26

Publications (1)

Publication Number Publication Date
FR1230530A true FR1230530A (fr) 1960-09-16

Family

ID=7491902

Family Applications (1)

Application Number Title Priority Date Filing Date
FR790393A Expired FR1230530A (fr) 1958-03-26 1959-03-25 Procédé de fabrication d'éléments semi-conducteurs, de préférence à base de germanium ou de silicium

Country Status (3)

Country Link
US (1) US3078549A (pt)
DE (1) DE1066282B (pt)
FR (1) FR1230530A (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302762A (pt) * 1963-06-01
US3320485A (en) * 1964-03-30 1967-05-16 Trw Inc Dielectric isolation for monolithic circuit
US3358362A (en) * 1965-01-21 1967-12-19 Int Resistance Co Method of making an electrical resistor
IT939391B (it) * 1970-09-08 1973-02-10 Pasticca semiconduttrice nonche metodo e dispositivo per la sua produzione
JPS6051280B2 (ja) * 1976-10-06 1985-11-13 株式会社東芝 タンタル酸リチウム単結晶ウエハ−の製造方法
US4773951A (en) * 1986-01-07 1988-09-27 Atlantic Richfield Company Method of manufacturing wafers of semiconductor material
DE3711262A1 (de) * 1987-04-03 1988-10-13 Wacker Chemitronic Verfahren und mittel zum entfernen von saegehilfsmittelresten von scheiben
US20130251940A1 (en) * 2012-03-23 2013-09-26 Sheng Sun Method of cutting an ingot for solar cell fabrication
EP2891174B1 (en) * 2012-08-31 2019-08-14 Semiconductor Technologies & Instruments Pte Ltd. System and method for automatically correcting for rotational misalignment of wafers on film frames

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2062486A (en) * 1934-04-27 1936-12-01 Cooper Sparkelite Ltd Method of making pyrophoric flints
US2264698A (en) * 1939-09-30 1941-12-02 Rca Corp Method of cutting quartz
US2436819A (en) * 1944-06-23 1948-03-02 Standard Telephones Cables Ltd Method of forming glass beads
US2619438A (en) * 1945-04-16 1952-11-25 Sperry Corp Method of making a grid structure
US2511962A (en) * 1946-07-17 1950-06-20 Linde Air Prod Co Forming jewel bearing blanks
US2762954A (en) * 1950-09-09 1956-09-11 Sylvania Electric Prod Method for assembling transistors
US2864013A (en) * 1953-06-29 1958-12-09 Electro Voice Sensitive strain responsive transducer and method of construction
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
US2760314A (en) * 1954-07-02 1956-08-28 Erie Resistor Corp Method of making ceramic pieces
US2752662A (en) * 1954-12-27 1956-07-03 Erie Resistor Corp Method of making thin flat electroded ceramic elements
US2930115A (en) * 1956-10-25 1960-03-29 Sr Otto Dietzsch Method of producing a modular body for controlled mixing or emission of a plurality of fluids
US2911773A (en) * 1957-06-18 1959-11-10 Itt Method of cutting semiconductive material

Also Published As

Publication number Publication date
DE1066282B (pt) 1900-01-01
US3078549A (en) 1963-02-26

Similar Documents

Publication Publication Date Title
FR1233420A (fr) Dispositif semi-conducteur en carbure de silicium et son procédé de fabrication
BE598393A (fr) Procédé de fabrication d'un dispositif semi-conducteur en silicium
FR1153749A (fr) Procédé de fabrication d'éléments semi-conducteurs
FR1230530A (fr) Procédé de fabrication d'éléments semi-conducteurs, de préférence à base de germanium ou de silicium
BE600139A (fr) Procédé de fabrication d'un agencement semi-conducteur.
FR1293869A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1364466A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1228175A (fr) Système d'électrodes à semi-conducteur et son procédé de fabrication
CH392701A (fr) Diode à semi-conducteur et son procédé de fabrication
FR1225692A (fr) Procédé de fabrication d'un système d'électrodes à semi-conducteur, notamment d'un transistron
BE583120A (fr) Procédé de fabrication d'un semi-conducteur à base de silicium.
BE601416A (fr) Procédé de fabrication d'un dispositif semi-conducteur en silicium.
FR1213335A (fr) Procédé de fabrication d'un système d'électrodes à semi-conducteur
FR1304998A (fr) Procédé de fabrication d'éléments semi-conducteurs en particulier d'éléments redresseurs à semi-conducteurs
FR1169409A (fr) Procédé de fabrication d'éléments semi-conducteurs à jonctions
BE600175A (fr) Procédé de fabrication de ressorts ou d'articles analogues, et articles ainsi obtenus
FR1166282A (fr) Procédé de fabrication d'éléments semi-conducteurs
FR1250785A (fr) Procédé de fabrication d'acier au silicium à cristaux orientés
FR1268691A (fr) Procédé de fabrication d'éléments semi-conducteurs
BE595054A (fr) Procédé de fabrication d'éléments semi-conducteurs.
FR1245591A (fr) Procédé et appareil de fabrication d'éléments semi-conducteurs
FR1374096A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1348733A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
BE581994A (fr) Dispositif semi-conducteur en carbure de silicium et son procédé de fabrication
FR1336812A (fr) Diode à semi-conducteur et procédé de fabrication