FR1172760A - Structures monocristallines, en particulier de semi-conducteurs, et leurs procédéset dispositifs de fabrication - Google Patents

Structures monocristallines, en particulier de semi-conducteurs, et leurs procédéset dispositifs de fabrication

Info

Publication number
FR1172760A
FR1172760A FR1172760DA FR1172760A FR 1172760 A FR1172760 A FR 1172760A FR 1172760D A FR1172760D A FR 1172760DA FR 1172760 A FR1172760 A FR 1172760A
Authority
FR
France
Prior art keywords
semiconductors
making
methods
devices
monocrystalline structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Inventor
Jean-Jules-Achille Robillard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1172760A publication Critical patent/FR1172760A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR1172760D 1956-03-05 1957-03-01 Structures monocristallines, en particulier de semi-conducteurs, et leurs procédéset dispositifs de fabrication Expired FR1172760A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US853979XA 1956-03-05 1956-03-05

Publications (1)

Publication Number Publication Date
FR1172760A true FR1172760A (fr) 1959-02-16

Family

ID=22191347

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1172760D Expired FR1172760A (fr) 1956-03-05 1957-03-01 Structures monocristallines, en particulier de semi-conducteurs, et leurs procédéset dispositifs de fabrication

Country Status (5)

Country Link
BE (1) BE555438A (enrdf_load_stackoverflow)
DE (1) DE1087425B (enrdf_load_stackoverflow)
FR (1) FR1172760A (enrdf_load_stackoverflow)
GB (1) GB853979A (enrdf_load_stackoverflow)
NL (2) NL105256C (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3134694A (en) * 1960-08-25 1964-05-26 Siemens Ag Apparatus for accurately controlling the production of semiconductor rods
NL275889A (enrdf_load_stackoverflow) * 1961-03-14
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
DE1241811B (de) * 1962-01-12 1967-06-08 Itt Ind Ges Mit Beschraenkter Verfahren zur Herstellung eindiffundierter Zonen von Verunreinigungen in einem Halbleiterkoerper
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
DE1521400B1 (de) * 1962-06-04 1970-07-16 Philips Nv Verfahren zum Herstellen eines Halbleiterbauelementes
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
FR1461335A (fr) * 1963-01-14 1966-02-25 Loire Atel Forges Procédé pour le traitement de surfaces de pièces métalliques permettant des fonctionnements sans lubrification
DE3931587A1 (de) * 1989-09-22 1991-04-04 Standard Elektrik Lorenz Ag Verfahren zum herstellen von halbleiterschichten

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices

Also Published As

Publication number Publication date
NL215006A (enrdf_load_stackoverflow)
NL105256C (enrdf_load_stackoverflow)
DE1087425B (de) 1960-08-18
GB853979A (en) 1960-11-16
BE555438A (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
FR1209490A (fr) Fabrication de dispositifs semi-conducteurs
FR1175953A (fr) Amélioration dans la construction de dispositifs semi-conducteurs
FR1180064A (fr) Fabrication de cristaux semi-conducteurs
FR1188659A (fr) Dispositifs semi-conducteurs
FR1170559A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1172760A (fr) Structures monocristallines, en particulier de semi-conducteurs, et leurs procédéset dispositifs de fabrication
FR1197039A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1211393A (fr) Dispositifs semi-conducteurs et procédé de fabrication de ces derniers
CH353085A (de) Halbleitervorrichtung
FR1204419A (fr) Dispositifs semi-conducteurs
FR1206050A (fr) Dispositifs semi-conducteurs et procédé pour les fabriquer
FR1210229A (fr) Fabrication de dispositifs semi-conducteurs
FR1208571A (fr) Dispositifs semi-conducteurs
CH335366A (fr) Dispositif semi-conducteur et procédé de fabrication de celui-ci
CH352410A (de) Halbleitergerät
CH345080A (fr) Dispositif semi-conducteur et procédé de fabrication de celui-ci
FR1179300A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1186004A (fr) Fabrication de dispositifs semi-conducteurs
CH369828A (de) Bistabile Halbleitervorrichtung
FR1176073A (fr) Dispositifs semi-conducteurs
AU213714B2 (en) Improvements in or relating to silicon semiconductor devices and processes for making them
AU213455B2 (en) Fabrication of semiconductor devices
AU211809B2 (en) Fabrication of semiconductor devices
AU1917756A (en) Improvements in or relating to silicon semiconductor devices and processes for making them
FR1171140A (fr) Fabrication de dispositifs semi-conducteurs