GB853979A - Improvements in or relating to the preparation of monocrystalline structures - Google Patents
Improvements in or relating to the preparation of monocrystalline structuresInfo
- Publication number
- GB853979A GB853979A GB6936/57A GB693657A GB853979A GB 853979 A GB853979 A GB 853979A GB 6936/57 A GB6936/57 A GB 6936/57A GB 693657 A GB693657 A GB 693657A GB 853979 A GB853979 A GB 853979A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- germanium
- plate
- substrate
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Metallurgy (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- General Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0853979/III/1> <PICT:0853979/III/2> A monocrystalline body of a substance is prepared by condensing the substance in its gaseous phase on the surface of a substrate which is initially provided by a surface which is part of and which lies in a principal plane of crystallization of a crystal of a material different from the substance and having beneath the surface an internal crystalline structure whose lattice constant approximates that of the substance, and which substrate is later provided by a monocrystalline deposit of the substance already condensed on the crystal surface, the temperature of the substrate being adjusted during the condensation to maintain the substrate temperature within the critical range at which the substance will condense in monocrystalline form on the substrate. In a method for preparing monocrystalline germanium the substrate is a polished single crystal of sodium chloride 19 (Fig. 1) attached to a tantalum plate 20 in an evacuated chamber 1a. Water vapour is introduced into the chamber 1a and water vapour particles are ionized by an electrical discharge between two electrodes 18 in front of and behind crystal 19, and the surface of crystal 19 is bombarded with ions of water vapour which remove an amorphous layer and expose the monocrystalline structure of the crystal. The chamber 1a is again evacuated, and a crucible 8a on a plate 4 is heated to 1500 DEG C. to evaporate germanium contained therein, some condensing on a tantalum plate 9, which is then heated to 1200 DEG C. to evaporate the germanium thereon so that some condenses on a plate 10, which is heated in turn, and so on with plates 11 and 12, purified germanium being obtained on plate 12. Plate 12 is heated to 900 DEG C. to evaporate the germanium which passes through an aperture 15, when a shutter 14 is opened, and through an aperture 17c in a plate 17, and deposits on crystal 19. Monochromatic light from a source 26 (Fig. 2) is passed through a collimator 27, a Nicol prism 28, and a quarter-wave plate 29, is reflected from the condensed layer on crystal 19, passes through a quarter-wave plate 30 and a Nicol prism 31, and is received by a photocell 33. The signal from the photocell 33 is amplified in an amplifier 34 and then applied to the vertical deflecting plates of a cathode ray oscilloscope 35. The Nicol prism 31 is rotated about the axis of the optical path by a synchronous motor 32 energised by an alternating current source 36 which also synchronizes the horizontal time base generated by the oscilloscope 35. Before the deposition commences the quarter-wave plates and Nicol prism 28 are adjusted so that two different maxima appear on the trace of the oscilloscope. The tantalum plate 20 (Fig. 1), and thus crystal 19, is heated to 430 DEG C. by passing high frequency electric current through a pair of separate coils 23 and 24 from a high frequency oscillator (not shown) and two adjustable attenuators (not shown), so that the currents in the coils set up electrical fields which thread the plate 20 in opposite directions. When the germanium begins to deposit on the crystal 19, the two maxima on the oscilloscope become weaker and the relative strengths of the currents in coils 23 and 24 are adjusted to stabilize the two maxima, this state being kept throughout the evaporation. When it is desired to add conductivity-determining additives to the germanium, plate 4 is rotated so that a crucible 8b containing the additive is beneath aperture 15, and the additive is evaporated therefrom on to the deposited germanium, which causes the maxima on the oscilloscope to disappear. The crystal is then heated to 350 DEG C. to allow the additive to diffuse into it, which, when complete, causes the maxima to appear again. Different additives from several crucibles may be deposited on the germanium to obtain several N and P type layers in the germanium single crystal. The several additives are passed through differently shaped apertures in plate 17 (which is rotatable), so that several layers each having a portion which does not overlap with the other layers, are obtained in the monocrystal, to enable independent connections to the several layers to be made when the crystal is for use as a semi-conductor device. The germanium crystal is removed from the sodium chloride substrate by dissolving the latter. Specification 841,154 is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US853979XA | 1956-03-05 | 1956-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB853979A true GB853979A (en) | 1960-11-16 |
Family
ID=22191347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB6936/57A Expired GB853979A (en) | 1956-03-05 | 1957-03-01 | Improvements in or relating to the preparation of monocrystalline structures |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE555438A (en) |
DE (1) | DE1087425B (en) |
FR (1) | FR1172760A (en) |
GB (1) | GB853979A (en) |
NL (2) | NL215006A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3134694A (en) * | 1960-08-25 | 1964-05-26 | Siemens Ag | Apparatus for accurately controlling the production of semiconductor rods |
US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
US3188182A (en) * | 1961-06-29 | 1965-06-08 | Gen Electric | Use of the working material as part of the crystal making apparatus |
US3271209A (en) * | 1962-02-23 | 1966-09-06 | Siemens Ag | Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL275889A (en) * | 1961-03-14 | |||
US3332796A (en) * | 1961-06-26 | 1967-07-25 | Philips Corp | Preparing nickel ferrite single crystals on a monocrystalline substrate |
US3170825A (en) * | 1961-10-02 | 1965-02-23 | Merck & Co Inc | Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate |
DE1241811B (en) * | 1962-01-12 | 1967-06-08 | Itt Ind Ges Mit Beschraenkter | Process for the production of diffused zones of impurities in a semiconductor body |
DE1521400B1 (en) * | 1962-06-04 | 1970-07-16 | Philips Nv | Method for manufacturing a semiconductor component |
FR1461335A (en) * | 1963-01-14 | 1966-02-25 | Loire Atel Forges | Process for the treatment of surfaces of metal parts allowing operations without lubrication |
DE3931587A1 (en) * | 1989-09-22 | 1991-04-04 | Standard Elektrik Lorenz Ag | Producing semiconductor layer on wafer - by doping in reaction chamber of epitaxy reactor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
-
0
- BE BE555438D patent/BE555438A/xx unknown
- NL NL105256D patent/NL105256C/xx active
- NL NL215006D patent/NL215006A/xx unknown
-
1957
- 1957-03-01 GB GB6936/57A patent/GB853979A/en not_active Expired
- 1957-03-01 DE DER20656A patent/DE1087425B/en active Pending
- 1957-03-01 FR FR1172760D patent/FR1172760A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3134694A (en) * | 1960-08-25 | 1964-05-26 | Siemens Ag | Apparatus for accurately controlling the production of semiconductor rods |
US3188182A (en) * | 1961-06-29 | 1965-06-08 | Gen Electric | Use of the working material as part of the crystal making apparatus |
US3271209A (en) * | 1962-02-23 | 1966-09-06 | Siemens Ag | Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members |
US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
Also Published As
Publication number | Publication date |
---|---|
BE555438A (en) | |
FR1172760A (en) | 1959-02-16 |
NL215006A (en) | |
NL105256C (en) | |
DE1087425B (en) | 1960-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB853979A (en) | Improvements in or relating to the preparation of monocrystalline structures | |
US4443532A (en) | Induced crystallographic modification of aromatic compounds | |
Ubbelohde et al. | Structure and thermal properties of crystals, VI. The role of hydrogen bonds in Rochelle salt | |
GB812818A (en) | Improvements in or relating to processes for the production of extremely pure substances | |
Ban et al. | Thin films of semiconductors and dielectrics produced by laser evaporation | |
JPH0510651B2 (en) | ||
Conger | Magnetization reversal in thin films | |
EerNisse | Sputtering and strain of Silicon by ion implantation | |
Reichlmaier et al. | Surface trimer crystallization on poly (ethylene terephthalate) studied by time‐of‐flight secondary ion mass spectrometry | |
US3158511A (en) | Monocrystalline structures including semiconductors and system for manufacture thereof | |
Fletcher et al. | The crystal structure of triglycine sulphate at low X-ray dosage and after irradiation/field treatment | |
Satou et al. | Variation of crystallization with arrival ratio in titanium nitride films formed by dynamic mixing method | |
Lo et al. | The adsorption and nucleation of silver on tungsten (110) | |
Williams | Hole mobility in rubrene | |
Mannami et al. | Angular distribution measurements of sputtered Au atoms with quartz oscillator microbalances | |
Nomura et al. | Electro‐optic effects of electron cyclotron resonance plasma‐sputtered Bi12SiO20 thin films on sapphire | |
Nejezchleb et al. | Preparation and photoelectric properties of antimony selenium iodide | |
JPH0762229B2 (en) | How to make a carbon thin film | |
JP2985472B2 (en) | Method of forming silicon film | |
JPH02275798A (en) | Apparatus and method for forming diamond membrane | |
JPH02229792A (en) | Production of vapor deposited thin film | |
JPH048506B2 (en) | ||
NO124319B (en) | ||
US3338744A (en) | Process for vacuum depositing high purity superconductive niobium films without the use of high vacuum | |
JP3610372B2 (en) | Film formation method and apparatus by negative ion irradiation and simultaneous vapor deposition |