GB853979A - Improvements in or relating to the preparation of monocrystalline structures - Google Patents
Improvements in or relating to the preparation of monocrystalline structuresInfo
- Publication number
- GB853979A GB853979A GB6936/57A GB693657A GB853979A GB 853979 A GB853979 A GB 853979A GB 6936/57 A GB6936/57 A GB 6936/57A GB 693657 A GB693657 A GB 693657A GB 853979 A GB853979 A GB 853979A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- germanium
- plate
- substrate
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 abstract 14
- 229910052732 germanium Inorganic materials 0.000 abstract 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 11
- 239000000758 substrate Substances 0.000 abstract 7
- 239000000654 additive Substances 0.000 abstract 6
- 239000000126 substance Substances 0.000 abstract 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 4
- 230000000996 additive effect Effects 0.000 abstract 3
- 229910052715 tantalum Inorganic materials 0.000 abstract 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 3
- 239000011780 sodium chloride Substances 0.000 abstract 2
- 238000009833 condensation Methods 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000001360 synchronised effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US853979XA | 1956-03-05 | 1956-03-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB853979A true GB853979A (en) | 1960-11-16 |
Family
ID=22191347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6936/57A Expired GB853979A (en) | 1956-03-05 | 1957-03-01 | Improvements in or relating to the preparation of monocrystalline structures |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE555438A (enrdf_load_stackoverflow) |
| DE (1) | DE1087425B (enrdf_load_stackoverflow) |
| FR (1) | FR1172760A (enrdf_load_stackoverflow) |
| GB (1) | GB853979A (enrdf_load_stackoverflow) |
| NL (2) | NL105256C (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3134694A (en) * | 1960-08-25 | 1964-05-26 | Siemens Ag | Apparatus for accurately controlling the production of semiconductor rods |
| US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
| US3188182A (en) * | 1961-06-29 | 1965-06-08 | Gen Electric | Use of the working material as part of the crystal making apparatus |
| US3271209A (en) * | 1962-02-23 | 1966-09-06 | Siemens Ag | Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL275889A (enrdf_load_stackoverflow) * | 1961-03-14 | |||
| US3332796A (en) * | 1961-06-26 | 1967-07-25 | Philips Corp | Preparing nickel ferrite single crystals on a monocrystalline substrate |
| US3170825A (en) * | 1961-10-02 | 1965-02-23 | Merck & Co Inc | Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate |
| DE1241811B (de) * | 1962-01-12 | 1967-06-08 | Itt Ind Ges Mit Beschraenkter | Verfahren zur Herstellung eindiffundierter Zonen von Verunreinigungen in einem Halbleiterkoerper |
| DE1521400B1 (de) * | 1962-06-04 | 1970-07-16 | Philips Nv | Verfahren zum Herstellen eines Halbleiterbauelementes |
| FR1461335A (fr) * | 1963-01-14 | 1966-02-25 | Loire Atel Forges | Procédé pour le traitement de surfaces de pièces métalliques permettant des fonctionnements sans lubrification |
| DE3931587A1 (de) * | 1989-09-22 | 1991-04-04 | Standard Elektrik Lorenz Ag | Verfahren zum herstellen von halbleiterschichten |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
-
0
- NL NL215006D patent/NL215006A/xx unknown
- NL NL105256D patent/NL105256C/xx active
- BE BE555438D patent/BE555438A/xx unknown
-
1957
- 1957-03-01 GB GB6936/57A patent/GB853979A/en not_active Expired
- 1957-03-01 DE DER20656A patent/DE1087425B/de active Pending
- 1957-03-01 FR FR1172760D patent/FR1172760A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3134694A (en) * | 1960-08-25 | 1964-05-26 | Siemens Ag | Apparatus for accurately controlling the production of semiconductor rods |
| US3188182A (en) * | 1961-06-29 | 1965-06-08 | Gen Electric | Use of the working material as part of the crystal making apparatus |
| US3271209A (en) * | 1962-02-23 | 1966-09-06 | Siemens Ag | Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members |
| US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| NL215006A (enrdf_load_stackoverflow) | |
| NL105256C (enrdf_load_stackoverflow) | |
| FR1172760A (fr) | 1959-02-16 |
| DE1087425B (de) | 1960-08-18 |
| BE555438A (enrdf_load_stackoverflow) |
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