FR1115448A - Dispositif semi-conducteur à jonctions à forte évacuation thermique - Google Patents

Dispositif semi-conducteur à jonctions à forte évacuation thermique

Info

Publication number
FR1115448A
FR1115448A FR1115448DA FR1115448A FR 1115448 A FR1115448 A FR 1115448A FR 1115448D A FR1115448D A FR 1115448DA FR 1115448 A FR1115448 A FR 1115448A
Authority
FR
France
Prior art keywords
semiconductor device
high thermal
thermal evacuation
evacuation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1115448A publication Critical patent/FR1115448A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR1115448D 1953-10-16 1954-10-15 Dispositif semi-conducteur à jonctions à forte évacuation thermique Expired FR1115448A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US386437A US2928162A (en) 1953-10-16 1953-10-16 Junction type semiconductor device having improved heat dissipating characteristics

Publications (1)

Publication Number Publication Date
FR1115448A true FR1115448A (fr) 1956-04-24

Family

ID=23525574

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1115448D Expired FR1115448A (fr) 1953-10-16 1954-10-15 Dispositif semi-conducteur à jonctions à forte évacuation thermique

Country Status (6)

Country Link
US (1) US2928162A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE532590A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1032405B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1115448A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB768731A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL89952C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060052B (de) * 1958-01-11 1959-06-25 Philips Patentverwaltung Verfahren und Vorrichtung zur Herstellung grossflaechiger p-n-UEbergaenge bei Halbleiteranordnungen des Legierungstyps, insbesondere bei Kristalldioden
DE1090327B (de) * 1957-02-25 1960-10-06 Philco Corp Verfahren zur Herstellung von Elektrodenanschluessen bei Halbleiteranordnungen mit wenigstens einer Legierungselektrode
DE1090769B (de) * 1957-01-09 1960-10-13 Philips Nv Verfahren zur Herstellung von Leitfaehigkeits- oder pn-UEbergaengen in Halbleiterkoerpern nach dem Aufschmelzverfahren
DE1096501B (de) * 1958-04-12 1961-01-05 Intermetall Legierungsbegrenzungsform zur Herstellung von Legierungskontakten an Halbleiterbauelementen
DE1194064B (de) * 1956-08-31 1965-06-03 Sony Kabushiki Kaisha Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187666B (nl) * 1954-05-18 Blum Gmbh Julius Telescopische uittrekgeleiding voor schuifladen of dergelijke.
US3065534A (en) * 1955-03-30 1962-11-27 Itt Method of joining a semiconductor to a conductor
NL251064A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1955-11-04
NL273326A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1961-04-14
US3212160A (en) * 1962-05-18 1965-10-19 Transitron Electronic Corp Method of manufacturing semiconductive devices
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3474088A (en) * 1966-01-26 1969-10-21 Nippon Electric Co Metal-to-semiconductor area contact rectifying elements
US3350293A (en) * 1966-11-14 1967-10-31 Components Inc Passivating silicon semiconductor devices with sputtered tungsten oxide at low temperatures
US4193445A (en) * 1978-06-29 1980-03-18 International Business Machines Corporation Conduction cooled module
GB2168529B (en) * 1984-12-18 1988-02-03 Marconi Electronic Devices Electrical contacts for semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2381025A (en) * 1940-06-15 1945-08-07 Addink Nicolaas Willem Hendrik Blocking-layer rectifier
US2444255A (en) * 1944-11-10 1948-06-29 Gen Electric Fabrication of rectifier cells
DE885754C (de) * 1951-05-10 1953-08-06 Sueddeutsche App Fabrik G M B Gleichrichterplatte mit Isolierzwischenlage zur Aufnahme des Kontaktdruckes
NL94441C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1951-09-15
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
US2776920A (en) * 1952-11-05 1957-01-08 Gen Electric Germanium-zinc alloy semi-conductors
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194064B (de) * 1956-08-31 1965-06-03 Sony Kabushiki Kaisha Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium
DE1090769B (de) * 1957-01-09 1960-10-13 Philips Nv Verfahren zur Herstellung von Leitfaehigkeits- oder pn-UEbergaengen in Halbleiterkoerpern nach dem Aufschmelzverfahren
DE1090327B (de) * 1957-02-25 1960-10-06 Philco Corp Verfahren zur Herstellung von Elektrodenanschluessen bei Halbleiteranordnungen mit wenigstens einer Legierungselektrode
DE1060052B (de) * 1958-01-11 1959-06-25 Philips Patentverwaltung Verfahren und Vorrichtung zur Herstellung grossflaechiger p-n-UEbergaenge bei Halbleiteranordnungen des Legierungstyps, insbesondere bei Kristalldioden
DE1096501B (de) * 1958-04-12 1961-01-05 Intermetall Legierungsbegrenzungsform zur Herstellung von Legierungskontakten an Halbleiterbauelementen

Also Published As

Publication number Publication date
NL89952C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01
BE532590A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01
GB768731A (en) 1957-02-20
DE1032405B (de) 1958-06-19
US2928162A (en) 1960-03-15

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