FR1112727A - élément semi-conducteur et procédé de fabrication dudit élément - Google Patents

élément semi-conducteur et procédé de fabrication dudit élément

Info

Publication number
FR1112727A
FR1112727A FR1112727DA FR1112727A FR 1112727 A FR1112727 A FR 1112727A FR 1112727D A FR1112727D A FR 1112727DA FR 1112727 A FR1112727 A FR 1112727A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1112727A publication Critical patent/FR1112727A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15External mechanical adjustment of electron or ion optical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
FR1112727D 1953-07-28 1954-07-28 élément semi-conducteur et procédé de fabrication dudit élément Expired FR1112727A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES34551A DE969465C (de) 1953-07-28 1953-07-28 Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DES34714A DE1115838B (de) 1953-07-28 1953-08-07 Verfahren zum oxydierenden chemischen Behandeln von Halbleiteroberflaechen
DES34794A DE977619C (de) 1953-07-28 1953-08-13 Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang
DES38554A DE1012378B (de) 1953-07-28 1954-04-05 Halbleiteranordnung mit p-n-UEbergang

Publications (1)

Publication Number Publication Date
FR1112727A true FR1112727A (fr) 1956-03-19

Family

ID=27437475

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1112727D Expired FR1112727A (fr) 1953-07-28 1954-07-28 élément semi-conducteur et procédé de fabrication dudit élément

Country Status (3)

Country Link
DE (4) DE969465C (xx)
FR (1) FR1112727A (xx)
NL (6) NL269213A (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246886B (de) * 1960-07-30 1967-08-10 Elektronik M B H Verfahren zur Stabilisierung und Verbesserung der Sperreigenschaften von Halbleiterbauelementen
BE629065A (xx) * 1960-08-30
DE1246888C2 (de) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg Verfahren zum herstellen von gleichrichteranordnungen in brueckenschaltung fuer kleine stromstaerken
NL282407A (xx) * 1961-08-30
DE1244966B (de) * 1962-01-17 1967-07-20 Telefunken Patent Verfahren zur Herstellung von oberflaechenstabilisierten Halbleiterbauelementen
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE626305C (de) * 1928-03-10 1936-03-02 Siegmund Loewe Dr Mehrfachroehre
DE724888C (de) * 1936-05-30 1942-09-09 Siemens Ag Verfahren zum Herstellen von Selen-Gleichrichtern
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
NL34436C (xx) * 1945-04-20
NL129688C (xx) * 1945-04-28
NL84057C (xx) * 1948-02-26
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
NL91957C (xx) * 1949-03-31
CA478611A (en) * 1949-12-29 1951-11-13 Western Electric Company, Incorporated Etching processes and solutions
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements
BE507187A (xx) * 1950-11-30
BE511009A (xx) * 1951-04-28
US2669692A (en) * 1951-08-10 1954-02-16 Bell Telephone Labor Inc Method for determining electrical characteristics of semiconductive bodies
GB1576783A (en) * 1977-11-07 1980-10-15 Teledyne Canada Control apparatus for a pneumaticallyoperated hopper feeder

Also Published As

Publication number Publication date
NL189573B (nl) 1900-01-01
DE1012378B (de) 1957-07-18
NL269213A (xx) 1900-01-01
DE969465C (de) 1958-06-04
NL107276C (xx) 1900-01-01
NL101504C (xx) 1900-01-01
DE977619C (de) 1967-08-31
NL269212A (xx) 1900-01-01
DE1115838B (de) 1961-10-26
NL109229C (xx) 1900-01-01

Similar Documents

Publication Publication Date Title
FR1093724A (fr) Dispositif semi-conducteur, et procédé de fabrication de celui-ci
FR1079960A (fr) Procédé de fabrication de corps semi-conducteurs
FR1130712A (fr) Procédé de fabrication de semi-conducteurs
CH377003A (fr) Transistor et procédé de fabrication dudit transistor
FR1103544A (fr) Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci
FR1112727A (fr) élément semi-conducteur et procédé de fabrication dudit élément
FR1131887A (fr) Procédé de fabrication de phényl-chloro-silanes
FR1086434A (fr) Dispositif semi-conducteur et procédé de fabrication de ce dispositif
FR1109935A (fr) Dérivés époxydes et procédé de fabrication
FR1081598A (fr) Détonateur perfectionné et son procédé de fabrication
FR905006A (fr) élément de construction et procédé de fabrication
FR1134826A (fr) Klystron et son procédé de fabrication
CH361059A (fr) Transistor et procédé de fabrication de celui-ci
FR1089273A (fr) élément de construction et son procédé de fabrication
FR1087709A (fr) élément de construction et procédé de fabrication
FR1083810A (fr) élément de construction et procédé de fabrication de cet élément
CH345080A (fr) Dispositif semi-conducteur et procédé de fabrication de celui-ci
FR1092432A (fr) élément de parquet et son procédé de fabrication
FR1109404A (fr) élément transisteur du type multicouche et son procédé de fabrication
FR1111581A (fr) Dispositifs semi-conducteurs et procédés de fabrication de ceux-ci
FR1137601A (fr) élément thermo-électrique et son procédé de fabrication
FR1138205A (fr) Procédé de fabrication de tuyaux, notamment de tuyaux pliables
CH314231A (fr) Insecticide et procédé de fabrication de celui-ci
FR1069899A (fr) élément cathodique et son procédé de fabrication
FR1103572A (fr) Procédé de fabrication de semi-conducteurs et ses applications