FR1112727A - semiconductor element and method of manufacturing said element - Google Patents

semiconductor element and method of manufacturing said element

Info

Publication number
FR1112727A
FR1112727A FR1112727DA FR1112727A FR 1112727 A FR1112727 A FR 1112727A FR 1112727D A FR1112727D A FR 1112727DA FR 1112727 A FR1112727 A FR 1112727A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1112727A publication Critical patent/FR1112727A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR1112727D 1953-07-28 1954-07-28 semiconductor element and method of manufacturing said element Expired FR1112727A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES34551A DE969465C (en) 1953-07-28 1953-07-28 Semiconductor element with sharp p-n or p-n-p junctions
DES34714A DE1115838B (en) 1953-07-28 1953-08-07 Process for the oxidizing chemical treatment of semiconductor surfaces
DES34794A DE977619C (en) 1953-07-28 1953-08-13 Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction
DES38554A DE1012378B (en) 1953-07-28 1954-04-05 Semiconductor arrangement with p-n transition

Publications (1)

Publication Number Publication Date
FR1112727A true FR1112727A (en) 1956-03-19

Family

ID=27437475

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1112727D Expired FR1112727A (en) 1953-07-28 1954-07-28 semiconductor element and method of manufacturing said element

Country Status (3)

Country Link
DE (4) DE969465C (en)
FR (1) FR1112727A (en)
NL (6) NL101504C (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246886B (en) * 1960-07-30 1967-08-10 Elektronik M B H Process for stabilizing and improving the blocking properties of semiconductor components
NL289632A (en) * 1960-08-30
DE1246888C2 (en) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg PROCESS FOR PRODUCING RECTIFIER ARRANGEMENTS IN A BRIDGE CIRCUIT FOR SMALL CURRENTS
NL282407A (en) * 1961-08-30
DE1244966B (en) * 1962-01-17 1967-07-20 Telefunken Patent Process for the production of surface-stabilized semiconductor components
DE2413608C2 (en) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method for manufacturing a semiconductor component
DE2700463A1 (en) * 1977-01-07 1978-07-13 Siemens Ag Semiconductor component edge passivating process - involves stacking of semiconductor components and passivating outer surface of stack

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE626305C (en) * 1928-03-10 1936-03-02 Siegmund Loewe Dr Multiple tubes
DE724888C (en) * 1936-05-30 1942-09-09 Siemens Ag Method of manufacturing selenium rectifiers
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
NL34436C (en) * 1945-04-20
NL129688C (en) * 1945-04-28
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
NL84057C (en) * 1948-02-26
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
NL153395B (en) * 1949-02-10 Contraves Ag IMPROVEMENT OF BISTABLE TRACTOR SWITCH
NL152683C (en) * 1949-03-31
CA478611A (en) * 1949-12-29 1951-11-13 Western Electric Company, Incorporated Etching processes and solutions
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements
BE507187A (en) * 1950-11-30
BE511009A (en) * 1951-04-28
US2669692A (en) * 1951-08-10 1954-02-16 Bell Telephone Labor Inc Method for determining electrical characteristics of semiconductive bodies
GB1576783A (en) * 1977-11-07 1980-10-15 Teledyne Canada Control apparatus for a pneumaticallyoperated hopper feeder

Also Published As

Publication number Publication date
DE1012378B (en) 1957-07-18
NL101504C (en) 1900-01-01
NL269213A (en) 1900-01-01
NL189573B (en) 1900-01-01
DE977619C (en) 1967-08-31
DE1115838B (en) 1961-10-26
NL109229C (en) 1900-01-01
NL269212A (en) 1900-01-01
DE969465C (en) 1958-06-04
NL107276C (en) 1900-01-01

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