DE1115838B - Process for the oxidizing chemical treatment of semiconductor surfaces - Google Patents

Process for the oxidizing chemical treatment of semiconductor surfaces

Info

Publication number
DE1115838B
DE1115838B DES34714A DES0034714A DE1115838B DE 1115838 B DE1115838 B DE 1115838B DE S34714 A DES34714 A DE S34714A DE S0034714 A DES0034714 A DE S0034714A DE 1115838 B DE1115838 B DE 1115838B
Authority
DE
Germany
Prior art keywords
treatment
semiconductor
treatment agent
semiconductor surfaces
chemical treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES34714A
Other languages
German (de)
Inventor
Dipl-Chem Georg Rosenberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL269213D priority Critical patent/NL269213A/xx
Priority to NL101504D priority patent/NL101504C/xx
Priority to NL107276D priority patent/NL107276C/xx
Priority to NL109229D priority patent/NL109229C/xx
Priority to NLAANVRAGE7906612,A priority patent/NL189573B/en
Priority to NL269212D priority patent/NL269212A/xx
Priority to DES11109D priority patent/DE911529C/en
Priority to DES34551A priority patent/DE969465C/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES34714A priority patent/DE1115838B/en
Priority to DES34794A priority patent/DE977619C/en
Priority to DES38554A priority patent/DE1012378B/en
Priority to FR1112727D priority patent/FR1112727A/en
Publication of DE1115838B publication Critical patent/DE1115838B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Description

DEUTSCHESGERMAN

PATENTAMTPATENT OFFICE

S 34714 Vfflc/21g S 34714 Vfflc / 21g

ANMELDETAG: 7. AUGUST 1953REGISTRATION DATE: AUGUST 7, 1953

BEKANNTMACHUNG DER ANMELDUNG UNDAUSGABE DER AUSLEGESCHRIFT: 26. OKTOBER 1961ANNOUNCEMENT OF THE REGISTRATION AND ISSUE OF THE EXPLAINING PAPER: OCTOBER 26 , 1961

Es ist bekannt, die Oberflächen von Halbleiteranordnungen, vorzugsweise Einkristallen, beispielsweise von Richtleitern, Detektoren, Transistoren, Phototransistoren, Heißleitern usw., bezüglich ihrer elektrischen Halbleitereigenschaften auf chemischem Wege durch Ätzen zu veredeln. Hierdurch treten gewisse Veränderungen in der Oberfläche ein, die in allen Einzelheiten noch nicht klar erkannt sind, welche aber mindestens teilweise in einer Oxydation der in der Kristalloberfläche befindlichen Halbleiteratome bzw. -moleküle zu bestehen scheinen. Teils wird durch derartige Prozesse auch eine Veränderung der Sperrwirkung d^r Oberfläche im einen oder im anderen Sinne bewirkt; die hierbei anzustrebende Wirkung richtet sich teilweise danach, in welcher Art die Halbleiteroberfläche beispielsweise kontaktiert werden soll, oder danach, wie der Leitfähigkeitszustand an den betreffenden Stellen der Halbleiteroberfläche beschaffen ist oder beeinflußt werden soll.It is known, the surfaces of semiconductor arrangements, preferably single crystals, for example of directional conductors, detectors, transistors, phototransistors, thermistors, etc., with regard to their to refine electrical semiconductor properties chemically by etching. Step through this certain changes in the surface, which are not yet clearly recognized in all details, but which at least partially in an oxidation of the semiconductor atoms located in the crystal surface or molecules seem to exist. Processes of this kind also lead to change in part the barrier effect of the surface in one or in the other causes other senses; the desired effect depends in part on the type of the semiconductor surface is to be contacted, for example, or according to how the conductivity state is created or is to be influenced at the relevant points on the semiconductor surface.

So besteht ein bekanntes Ätzmittel aus Eisessig, Flußsäure, konzentrierter Salpetersäure und flüssigem Brom. Ein anderes bekanntes Verfahren besteht in der anodischen Oxydation von Germaniumkristallen unter Anwendung von polymerisiertem Glykolborat als Elektrolyten. Außerdem ist die Oxydation von Siliziumkristallen durch Behandeln mit einer heißen oxydierenden Atmosphäre bekanntgeworden. Schließlich entspricht es dem Stande der Technik, die elektrischen Eigenschaften von Selen durch Behandeln mit SeO2-Dampf, mit NH4C1-Dampf oder durch gasförmige Reduktionsmittel zu verbessern.A well-known etchant consists of glacial acetic acid, hydrofluoric acid, concentrated nitric acid and liquid bromine. Another known method is the anodic oxidation of germanium crystals using polymerized glycol borate as an electrolyte. In addition, the oxidation of silicon crystals by treatment with a hot oxidizing atmosphere has become known. Finally, it corresponds to the state of the art to improve the electrical properties of selenium by treatment with SeO 2 vapor, with NH 4 C1 vapor or with gaseous reducing agents.

Die zuerst genannten Behandlungsmittel enthalten jedoch entweder von vornherein Wasser, oder es wird aus ihnen während des Oxydationsvorganges Wasser gebildet. Die Oxydation mit trockenen oxydierenden Gasen kann bei geeigneter Wahl dieser Gase die Wasserbildung vermeiden, setzt aber die Anwendung hoher Behandlungstemperatur voraus. Die für Selen bekanntgewordenen gasförmigen Behandlungsstoffe lassen sich auf andere Halbleiterstoffe nicht übertragen. Im übrigen dürfte es im Interesse eines geringeren technischen Aufwandes zweckmäßig sein, die Behandlung mit einer Flüssigkeit vorzuziehen.However, the first-mentioned treatment agents either contain water in the first place or it will water is formed from them during the oxidation process. Oxidation with dry oxidizing With a suitable choice of these gases, gases can avoid the formation of water, but the application continues high treatment temperature. The gaseous treatment substances known for selenium cannot be transferred to other semiconductor materials. Incidentally, it should be in the interests of one It may be expedient for less technical effort to prefer treatment with a liquid.

Die Erfindung bezieht sich auf ein Verfahren zum oxydierenden Behändem der Halbleiteroberflächen von Richtleitern, Detektoren, Transistoren, Phototransistoren, Heißleitern od. dgl. mit Flüssigkeiten und ist durch die Benutzung eines wasserfreien, flüssigen Behandlungsmittels mit peroxydischem Charakter, vorzugsweise eines organischen Behandlungsmittels, gekennzeichnet.The invention relates to a method for oxidizing the semiconductor surfaces of directional conductors, detectors, transistors, phototransistors, thermistors or the like with liquids and is through the use of an anhydrous, liquid treatment agent with peroxidic Character, preferably of an organic treatment agent, characterized.

Durch eine Oberflächenbehandlung mit derartigen, Verfahren zum oxydierenden chemischen
Behandeln von HalbleiteroberflächenBy surface treatment with such, process for oxidizing chemical
Treatment of semiconductor surfaces

Anmelder:Applicant:

Siemens & Halske Aktiengesellschaft,Siemens & Halske Aktiengesellschaft,

Berlin und München,
München 2, Wittelsbacherplatz 2Berlin and Munich,
Munich 2, Wittelsbacherplatz 2

DipL-Chem. Georg Rosenberger, München,
ist als Erfinder genannt wordenDipL-Chem. Georg Rosenberger, Munich,
has been named as the inventor

an sich bekannten Stoffen in nicht wäßriger Phase bzw. Lösung verbleibt auf der Oberfläche eine nicht wäßrige Schicht, welche gegebenenfalls nach Bildung des erwünschten Oberfiächenzustandes entfernt werden kann.substances known per se in a non-aqueous phase or solution do not remain on the surface aqueous layer, which may be removed after the desired surface condition has been formed can.

Gemäß einer besonderen Ausbildung des Erfindungsgedankens kann das Ätzmittel sogar mindestens teilweise, gegebenenfalls in feinster adsorbierender, unter Umständen monomolekularer Schicht auf der Kristalloberfläche belassen bleiben. Nach Anwendung des Ätzverfahrens gemäß der Erfindung kann zweckmäßigerweise eine feuchtigkeitsundurchlässige Schutzschicht, vorzugsweise aus einem Kunststoff, zweckmäßig einem organischen Kunststoff, auf die Oberfläche der Halbleiteranordnung, mindestens an den oberflächenbehandelten Stellen aufgetragen werden. Die durch die wasserfreie Ätzung erzielte vorteilhafte Wirkung bleibt dann auch für die Dauer erhalten.According to a special embodiment of the inventive concept, the etchant can even at least partially, optionally in the finest adsorbent, possibly monomolecular layer on the Leave the crystal surface in place. After applying the etching process according to the invention can expediently a moisture-impermeable protective layer, preferably made of a plastic, expediently an organic plastic, at least on the surface of the semiconductor device can be applied to the surface-treated areas. The advantageous one achieved by the anhydrous etching The effect is then retained for the long term.

Die Vorteile eines flüssigen Behandlungsmittels mit peroxydischem Charakter liegen in der starken Oxydationskraft dieser Stoffe, die bereits bei Zimmertemperatur zu der gewünschten Oxydation der Halbleiteroberfläche bei allen Halbleitern führt. Die Bildung von Wasser während des Oxydationsprozesses ist ausgeschlossen, so daß eine Anlagerung von Wassermolekülen an die Halbleiteroberfläche nicht stattfinden kann. Die Möglichkeit, eine aus einem plastischen Kunststoff bestehende Schutzschicht auf die frisch behandelte Halbleiteroberfläche ohne vorheriges Entfernen des Behandlungsmittels aufzubringen, und die veredelnde, insbesondere aushärtendeThe advantages of a liquid treatment agent with a peroxidic character are its strong oxidizing power these substances, which cause the desired oxidation of the semiconductor surface at room temperature in all semiconductors. The formation of water during the oxidation process is excluded, so that an accumulation of water molecules on the semiconductor surface does not occur can take place. The possibility of a protective layer made of a plastic plastic to apply the freshly treated semiconductor surface without prior removal of the treatment agent, and the refining, especially hardening

109 710/399109 710/399

Wirkung, die das auf der Halbleiteroberfläche anwesende peroxydische Behandlungsmittel dann auf den Kunststoff ausübt, stellen einen weiteren erheblichen Vorteil gegenüber dem Bekannten dar; denn eine Entfernung des Behandlungsmittels vor dem Aufbringen dieser Schutzschicht würde der Luft und damit auch der Feuchtigkeit neu den Zutritt zu der frisch behandelten und daher besonders empfindlichen Halbleiteroberfläche gestatten.Effect that the peroxidic treatment agent present on the semiconductor surface then has the plastic exercises represent another significant advantage over the known; because removal of the treatment agent prior to the application of this protective layer would remove the air and So that the moisture also has access to the freshly treated and therefore particularly sensitive Allow semiconductor surface.

IOIO

Claims (3)

PATENTANSPRÜCHE:PATENT CLAIMS: 1. Verfahren zum oxydierenden, chemischen Behändem der Halbleiteroberflächen von Richtleitern, Detektoren, Transistoren, Phototransistören, Heißleitern od. dgl. mit Flüssigkeiten, dadurch gekennzeichnet, daß ein wasserfreies, flüssiges Behandlungsmittel mit peroxydischem Charakter, vorzugsweise ein organisches Behandlungsmittel, benutzt wird.1. A method for oxidizing, chemical handling of the semiconductor surfaces of directional conductors, detectors, transistors, phototransistors, thermistors or the like with liquids, characterized in that an anhydrous, liquid treatment agent with peroxidic character, preferably an organic treatment agent, is used. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß ein Teil des Behandlungsmittels nach Beendigung der Behandlung in geringer Schichtdicke,. vorzugsweise als adsorbierte bzw. monomolekulare Schicht, auf mindestens einem Teil der Halbleiteroberfläche belassen wird.2. The method according to claim 1, characterized in that part of the treatment agent after the end of the treatment in a thin layer. preferably as adsorbed or monomolecular layer, is left on at least part of the semiconductor surface. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß nach der Behandlung die Halbleiteroberfläche ganz oder teilweise, mindestens an den behandelten Teilen und/oder in der Umgebung von pn-Übergängen, mit einer feuchtigkeitsundurchlässigen Schutzschicht, vorzugsweise aus Kunststoff, bedeckt wird.3. The method according to claim 1 or 2, characterized in that after the treatment Semiconductor surface in whole or in part, at least on the treated parts and / or in the Environment of pn junctions, with a moisture-impermeable protective layer, preferably made of plastic. In Betracht gezogene Druckschriften:
Deutsche Patentschriften Nr. 724888, 829 191;
deutsche Patentanmeldung L10052 VIIIc/21gConsidered publications:
German Patent Nos. 724888, 829 191;
German patent application L10052 VIIIc / 21g (bekanntgemacht am 18.12.1952);
USA.-Patentschriften Nr. 2362 545, 2469 569,(announced 12/18/1952);
U.S. Patents Nos. 2362 545, 2469 569, 2497770, 2560792, 2583 681, 2619 414.2497770, 2560792, 2583 681, 2619 414. 109 710/399 10.61109 710/399 10.61
DES34714A 1941-08-06 1953-08-07 Process for the oxidizing chemical treatment of semiconductor surfaces Pending DE1115838B (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL269212D NL269212A (en) 1953-07-28
NL101504D NL101504C (en) 1953-07-28
NL107276D NL107276C (en) 1953-07-28
NL109229D NL109229C (en) 1953-07-28
NLAANVRAGE7906612,A NL189573B (en) 1953-07-28 HINGE FOR A WINDOW WITH A FRAME MADE FROM STRING PROFILES.
NL269213D NL269213A (en) 1953-07-28
DES11109D DE911529C (en) 1941-08-06 1941-08-06 Process for the production of stereo images with the aid of corpuscular beam devices
DES34551A DE969465C (en) 1953-07-28 1953-07-28 Semiconductor element with sharp p-n or p-n-p junctions
DES34714A DE1115838B (en) 1953-07-28 1953-08-07 Process for the oxidizing chemical treatment of semiconductor surfaces
DES34794A DE977619C (en) 1953-07-28 1953-08-13 Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction
DES38554A DE1012378B (en) 1953-07-28 1954-04-05 Semiconductor arrangement with p-n transition
FR1112727D FR1112727A (en) 1953-07-28 1954-07-28 semiconductor element and method of manufacturing said element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES34551A DE969465C (en) 1953-07-28 1953-07-28 Semiconductor element with sharp p-n or p-n-p junctions
DES34714A DE1115838B (en) 1953-07-28 1953-08-07 Process for the oxidizing chemical treatment of semiconductor surfaces
DES34794A DE977619C (en) 1953-07-28 1953-08-13 Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction
DES38554A DE1012378B (en) 1953-07-28 1954-04-05 Semiconductor arrangement with p-n transition

Publications (1)

Publication Number Publication Date
DE1115838B true DE1115838B (en) 1961-10-26

Family

ID=27437475

Family Applications (4)

Application Number Title Priority Date Filing Date
DES34551A Expired DE969465C (en) 1941-08-06 1953-07-28 Semiconductor element with sharp p-n or p-n-p junctions
DES34714A Pending DE1115838B (en) 1941-08-06 1953-08-07 Process for the oxidizing chemical treatment of semiconductor surfaces
DES34794A Expired DE977619C (en) 1941-08-06 1953-08-13 Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction
DES38554A Pending DE1012378B (en) 1941-08-06 1954-04-05 Semiconductor arrangement with p-n transition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DES34551A Expired DE969465C (en) 1941-08-06 1953-07-28 Semiconductor element with sharp p-n or p-n-p junctions

Family Applications After (2)

Application Number Title Priority Date Filing Date
DES34794A Expired DE977619C (en) 1941-08-06 1953-08-13 Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction
DES38554A Pending DE1012378B (en) 1941-08-06 1954-04-05 Semiconductor arrangement with p-n transition

Country Status (3)

Country Link
DE (4) DE969465C (en)
FR (1) FR1112727A (en)
NL (6) NL109229C (en)

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DE2413608A1 (en) * 1974-03-21 1975-10-02 Licentia Gmbh Insulating coating prodn on strip contact semiconductor - using neutral aq. (potassium) peroxy-disulphate soln

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DE1246886B (en) * 1960-07-30 1967-08-10 Elektronik M B H Process for stabilizing and improving the blocking properties of semiconductor components
BE629065A (en) * 1960-08-30
DE1246888C2 (en) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg PROCESS FOR PRODUCING RECTIFIER ARRANGEMENTS IN A BRIDGE CIRCUIT FOR SMALL CURRENTS
NL282407A (en) * 1961-08-30
DE1244966B (en) * 1962-01-17 1967-07-20 Telefunken Patent Process for the production of surface-stabilized semiconductor components
DE2700463A1 (en) * 1977-01-07 1978-07-13 Siemens Ag Semiconductor component edge passivating process - involves stacking of semiconductor components and passivating outer surface of stack

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DE724888C (en) * 1936-05-30 1942-09-09 Siemens Ag Method of manufacturing selenium rectifiers
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
US2583681A (en) * 1945-04-20 1952-01-29 Hazeltine Research Inc Crystal contacts of which one element is silicon
US2560792A (en) * 1948-02-26 1951-07-17 Bell Telephone Labor Inc Electrolytic surface treatment of germanium
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
DE829191C (en) * 1949-02-10 1952-01-24 Siemens Ag Semiconductors for rectifier or amplifier purposes
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements

Cited By (1)

* Cited by examiner, † Cited by third party
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DE2413608A1 (en) * 1974-03-21 1975-10-02 Licentia Gmbh Insulating coating prodn on strip contact semiconductor - using neutral aq. (potassium) peroxy-disulphate soln

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NL269213A (en) 1900-01-01
FR1112727A (en) 1956-03-19
NL101504C (en) 1900-01-01
NL189573B (en) 1900-01-01
NL107276C (en) 1900-01-01
DE1012378B (en) 1957-07-18
NL269212A (en) 1900-01-01
DE977619C (en) 1967-08-31
NL109229C (en) 1900-01-01
DE969465C (en) 1958-06-04

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