DE1115838B - Process for the oxidizing chemical treatment of semiconductor surfaces - Google Patents
Process for the oxidizing chemical treatment of semiconductor surfacesInfo
- Publication number
- DE1115838B DE1115838B DES34714A DES0034714A DE1115838B DE 1115838 B DE1115838 B DE 1115838B DE S34714 A DES34714 A DE S34714A DE S0034714 A DES0034714 A DE S0034714A DE 1115838 B DE1115838 B DE 1115838B
- Authority
- DE
- Germany
- Prior art keywords
- treatment
- semiconductor
- treatment agent
- semiconductor surfaces
- chemical treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 11
- 230000001590 oxidative effect Effects 0.000 title claims description 7
- 239000000126 substance Substances 0.000 title claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical compound BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/15—External mechanical adjustment of electron or ion optical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
S 34714 Vfflc/21g S 34714 Vfflc / 21g
BEKANNTMACHUNG DER ANMELDUNG UNDAUSGABE DER AUSLEGESCHRIFT: 26. OKTOBER 1961ANNOUNCEMENT OF THE REGISTRATION AND ISSUE OF THE EXPLAINING PAPER: OCTOBER 26 , 1961
Es ist bekannt, die Oberflächen von Halbleiteranordnungen, vorzugsweise Einkristallen, beispielsweise von Richtleitern, Detektoren, Transistoren, Phototransistoren, Heißleitern usw., bezüglich ihrer elektrischen Halbleitereigenschaften auf chemischem Wege durch Ätzen zu veredeln. Hierdurch treten gewisse Veränderungen in der Oberfläche ein, die in allen Einzelheiten noch nicht klar erkannt sind, welche aber mindestens teilweise in einer Oxydation der in der Kristalloberfläche befindlichen Halbleiteratome bzw. -moleküle zu bestehen scheinen. Teils wird durch derartige Prozesse auch eine Veränderung der Sperrwirkung d^r Oberfläche im einen oder im anderen Sinne bewirkt; die hierbei anzustrebende Wirkung richtet sich teilweise danach, in welcher Art die Halbleiteroberfläche beispielsweise kontaktiert werden soll, oder danach, wie der Leitfähigkeitszustand an den betreffenden Stellen der Halbleiteroberfläche beschaffen ist oder beeinflußt werden soll.It is known, the surfaces of semiconductor arrangements, preferably single crystals, for example of directional conductors, detectors, transistors, phototransistors, thermistors, etc., with regard to their to refine electrical semiconductor properties chemically by etching. Step through this certain changes in the surface, which are not yet clearly recognized in all details, but which at least partially in an oxidation of the semiconductor atoms located in the crystal surface or molecules seem to exist. Processes of this kind also lead to change in part the barrier effect of the surface in one or in the other causes other senses; the desired effect depends in part on the type of the semiconductor surface is to be contacted, for example, or according to how the conductivity state is created or is to be influenced at the relevant points on the semiconductor surface.
So besteht ein bekanntes Ätzmittel aus Eisessig, Flußsäure, konzentrierter Salpetersäure und flüssigem Brom. Ein anderes bekanntes Verfahren besteht in der anodischen Oxydation von Germaniumkristallen unter Anwendung von polymerisiertem Glykolborat als Elektrolyten. Außerdem ist die Oxydation von Siliziumkristallen durch Behandeln mit einer heißen oxydierenden Atmosphäre bekanntgeworden. Schließlich entspricht es dem Stande der Technik, die elektrischen Eigenschaften von Selen durch Behandeln mit SeO2-Dampf, mit NH4C1-Dampf oder durch gasförmige Reduktionsmittel zu verbessern.A well-known etchant consists of glacial acetic acid, hydrofluoric acid, concentrated nitric acid and liquid bromine. Another known method is the anodic oxidation of germanium crystals using polymerized glycol borate as an electrolyte. In addition, the oxidation of silicon crystals by treatment with a hot oxidizing atmosphere has become known. Finally, it corresponds to the state of the art to improve the electrical properties of selenium by treatment with SeO 2 vapor, with NH 4 C1 vapor or with gaseous reducing agents.
Die zuerst genannten Behandlungsmittel enthalten jedoch entweder von vornherein Wasser, oder es wird aus ihnen während des Oxydationsvorganges Wasser gebildet. Die Oxydation mit trockenen oxydierenden Gasen kann bei geeigneter Wahl dieser Gase die Wasserbildung vermeiden, setzt aber die Anwendung hoher Behandlungstemperatur voraus. Die für Selen bekanntgewordenen gasförmigen Behandlungsstoffe lassen sich auf andere Halbleiterstoffe nicht übertragen. Im übrigen dürfte es im Interesse eines geringeren technischen Aufwandes zweckmäßig sein, die Behandlung mit einer Flüssigkeit vorzuziehen.However, the first-mentioned treatment agents either contain water in the first place or it will water is formed from them during the oxidation process. Oxidation with dry oxidizing With a suitable choice of these gases, gases can avoid the formation of water, but the application continues high treatment temperature. The gaseous treatment substances known for selenium cannot be transferred to other semiconductor materials. Incidentally, it should be in the interests of one It may be expedient for less technical effort to prefer treatment with a liquid.
Die Erfindung bezieht sich auf ein Verfahren zum oxydierenden Behändem der Halbleiteroberflächen von Richtleitern, Detektoren, Transistoren, Phototransistoren, Heißleitern od. dgl. mit Flüssigkeiten und ist durch die Benutzung eines wasserfreien, flüssigen Behandlungsmittels mit peroxydischem Charakter, vorzugsweise eines organischen Behandlungsmittels, gekennzeichnet.The invention relates to a method for oxidizing the semiconductor surfaces of directional conductors, detectors, transistors, phototransistors, thermistors or the like with liquids and is through the use of an anhydrous, liquid treatment agent with peroxidic Character, preferably of an organic treatment agent, characterized.
Durch eine Oberflächenbehandlung mit derartigen, Verfahren zum oxydierenden chemischen
Behandeln von HalbleiteroberflächenBy surface treatment with such, process for oxidizing chemical
Treatment of semiconductor surfaces
Anmelder:Applicant:
Siemens & Halske Aktiengesellschaft,Siemens & Halske Aktiengesellschaft,
Berlin und München,
München 2, Wittelsbacherplatz 2Berlin and Munich,
Munich 2, Wittelsbacherplatz 2
DipL-Chem. Georg Rosenberger, München,
ist als Erfinder genannt wordenDipL-Chem. Georg Rosenberger, Munich,
has been named as the inventor
an sich bekannten Stoffen in nicht wäßriger Phase bzw. Lösung verbleibt auf der Oberfläche eine nicht wäßrige Schicht, welche gegebenenfalls nach Bildung des erwünschten Oberfiächenzustandes entfernt werden kann.substances known per se in a non-aqueous phase or solution do not remain on the surface aqueous layer, which may be removed after the desired surface condition has been formed can.
Gemäß einer besonderen Ausbildung des Erfindungsgedankens kann das Ätzmittel sogar mindestens teilweise, gegebenenfalls in feinster adsorbierender, unter Umständen monomolekularer Schicht auf der Kristalloberfläche belassen bleiben. Nach Anwendung des Ätzverfahrens gemäß der Erfindung kann zweckmäßigerweise eine feuchtigkeitsundurchlässige Schutzschicht, vorzugsweise aus einem Kunststoff, zweckmäßig einem organischen Kunststoff, auf die Oberfläche der Halbleiteranordnung, mindestens an den oberflächenbehandelten Stellen aufgetragen werden. Die durch die wasserfreie Ätzung erzielte vorteilhafte Wirkung bleibt dann auch für die Dauer erhalten.According to a special embodiment of the inventive concept, the etchant can even at least partially, optionally in the finest adsorbent, possibly monomolecular layer on the Leave the crystal surface in place. After applying the etching process according to the invention can expediently a moisture-impermeable protective layer, preferably made of a plastic, expediently an organic plastic, at least on the surface of the semiconductor device can be applied to the surface-treated areas. The advantageous one achieved by the anhydrous etching The effect is then retained for the long term.
Die Vorteile eines flüssigen Behandlungsmittels mit peroxydischem Charakter liegen in der starken Oxydationskraft dieser Stoffe, die bereits bei Zimmertemperatur zu der gewünschten Oxydation der Halbleiteroberfläche bei allen Halbleitern führt. Die Bildung von Wasser während des Oxydationsprozesses ist ausgeschlossen, so daß eine Anlagerung von Wassermolekülen an die Halbleiteroberfläche nicht stattfinden kann. Die Möglichkeit, eine aus einem plastischen Kunststoff bestehende Schutzschicht auf die frisch behandelte Halbleiteroberfläche ohne vorheriges Entfernen des Behandlungsmittels aufzubringen, und die veredelnde, insbesondere aushärtendeThe advantages of a liquid treatment agent with a peroxidic character are its strong oxidizing power these substances, which cause the desired oxidation of the semiconductor surface at room temperature in all semiconductors. The formation of water during the oxidation process is excluded, so that an accumulation of water molecules on the semiconductor surface does not occur can take place. The possibility of a protective layer made of a plastic plastic to apply the freshly treated semiconductor surface without prior removal of the treatment agent, and the refining, especially hardening
109 710/399109 710/399
Wirkung, die das auf der Halbleiteroberfläche anwesende peroxydische Behandlungsmittel dann auf den Kunststoff ausübt, stellen einen weiteren erheblichen Vorteil gegenüber dem Bekannten dar; denn eine Entfernung des Behandlungsmittels vor dem Aufbringen dieser Schutzschicht würde der Luft und damit auch der Feuchtigkeit neu den Zutritt zu der frisch behandelten und daher besonders empfindlichen Halbleiteroberfläche gestatten.Effect that the peroxidic treatment agent present on the semiconductor surface then has the plastic exercises represent another significant advantage over the known; because removal of the treatment agent prior to the application of this protective layer would remove the air and So that the moisture also has access to the freshly treated and therefore particularly sensitive Allow semiconductor surface.
IOIO
Claims (3)
Deutsche Patentschriften Nr. 724888, 829 191;
deutsche Patentanmeldung L10052 VIIIc/21gConsidered publications:
German Patent Nos. 724888, 829 191;
German patent application L10052 VIIIc / 21g
USA.-Patentschriften Nr. 2362 545, 2469 569,(announced 12/18/1952);
U.S. Patents Nos. 2362 545, 2469 569,
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7906612,A NL189573B (en) | 1953-07-28 | HINGE FOR A WINDOW WITH A FRAME MADE FROM STRING PROFILES. | |
NL269212D NL269212A (en) | 1953-07-28 | ||
NL107276D NL107276C (en) | 1953-07-28 | ||
NL101504D NL101504C (en) | 1953-07-28 | ||
NL109229D NL109229C (en) | 1953-07-28 | ||
NL269213D NL269213A (en) | 1953-07-28 | ||
DES11109D DE911529C (en) | 1941-08-06 | 1941-08-06 | Process for the production of stereo images with the aid of corpuscular beam devices |
DES34551A DE969465C (en) | 1953-07-28 | 1953-07-28 | Semiconductor element with sharp p-n or p-n-p junctions |
DES34714A DE1115838B (en) | 1953-07-28 | 1953-08-07 | Process for the oxidizing chemical treatment of semiconductor surfaces |
DES34794A DE977619C (en) | 1953-07-28 | 1953-08-13 | Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction |
DES38554A DE1012378B (en) | 1953-07-28 | 1954-04-05 | Semiconductor arrangement with p-n transition |
FR1112727D FR1112727A (en) | 1953-07-28 | 1954-07-28 | semiconductor element and method of manufacturing said element |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES34551A DE969465C (en) | 1953-07-28 | 1953-07-28 | Semiconductor element with sharp p-n or p-n-p junctions |
DES34714A DE1115838B (en) | 1953-07-28 | 1953-08-07 | Process for the oxidizing chemical treatment of semiconductor surfaces |
DES34794A DE977619C (en) | 1953-07-28 | 1953-08-13 | Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction |
DES38554A DE1012378B (en) | 1953-07-28 | 1954-04-05 | Semiconductor arrangement with p-n transition |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1115838B true DE1115838B (en) | 1961-10-26 |
Family
ID=27437475
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES34551A Expired DE969465C (en) | 1941-08-06 | 1953-07-28 | Semiconductor element with sharp p-n or p-n-p junctions |
DES34714A Pending DE1115838B (en) | 1941-08-06 | 1953-08-07 | Process for the oxidizing chemical treatment of semiconductor surfaces |
DES34794A Expired DE977619C (en) | 1941-08-06 | 1953-08-13 | Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction |
DES38554A Pending DE1012378B (en) | 1941-08-06 | 1954-04-05 | Semiconductor arrangement with p-n transition |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES34551A Expired DE969465C (en) | 1941-08-06 | 1953-07-28 | Semiconductor element with sharp p-n or p-n-p junctions |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES34794A Expired DE977619C (en) | 1941-08-06 | 1953-08-13 | Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction |
DES38554A Pending DE1012378B (en) | 1941-08-06 | 1954-04-05 | Semiconductor arrangement with p-n transition |
Country Status (3)
Country | Link |
---|---|
DE (4) | DE969465C (en) |
FR (1) | FR1112727A (en) |
NL (6) | NL269212A (en) |
Cited By (1)
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---|---|---|---|---|
DE2413608A1 (en) * | 1974-03-21 | 1975-10-02 | Licentia Gmbh | Insulating coating prodn on strip contact semiconductor - using neutral aq. (potassium) peroxy-disulphate soln |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1246886B (en) * | 1960-07-30 | 1967-08-10 | Elektronik M B H | Process for stabilizing and improving the blocking properties of semiconductor components |
NL289632A (en) * | 1960-08-30 | |||
DE1246888C2 (en) * | 1960-11-24 | 1975-10-23 | Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg | PROCESS FOR PRODUCING RECTIFIER ARRANGEMENTS IN A BRIDGE CIRCUIT FOR SMALL CURRENTS |
NL282407A (en) * | 1961-08-30 | |||
DE1244966B (en) * | 1962-01-17 | 1967-07-20 | Telefunken Patent | Process for the production of surface-stabilized semiconductor components |
DE2700463A1 (en) * | 1977-01-07 | 1978-07-13 | Siemens Ag | Semiconductor component edge passivating process - involves stacking of semiconductor components and passivating outer surface of stack |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE724888C (en) * | 1936-05-30 | 1942-09-09 | Siemens Ag | Method of manufacturing selenium rectifiers |
US2362545A (en) * | 1942-01-29 | 1944-11-14 | Bell Telephone Labor Inc | Selenium rectifier and method of making it |
US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
US2497770A (en) * | 1948-12-29 | 1950-02-14 | Bell Telephone Labor Inc | Transistor-microphone |
US2560792A (en) * | 1948-02-26 | 1951-07-17 | Bell Telephone Labor Inc | Electrolytic surface treatment of germanium |
DE829191C (en) * | 1949-02-10 | 1952-01-24 | Siemens Ag | Semiconductors for rectifier or amplifier purposes |
US2583681A (en) * | 1945-04-20 | 1952-01-29 | Hazeltine Research Inc | Crystal contacts of which one element is silicon |
US2619414A (en) * | 1950-05-25 | 1952-11-25 | Bell Telephone Labor Inc | Surface treatment of germanium circuit elements |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE626305C (en) * | 1928-03-10 | 1936-03-02 | Siegmund Loewe Dr | Multiple tubes |
NL129688C (en) * | 1945-04-28 | |||
US2524033A (en) * | 1948-02-26 | 1950-10-03 | Bell Telephone Labor Inc | Three-electrode circuit element utilizing semiconductive materials |
NL152683C (en) * | 1949-03-31 | |||
CA478611A (en) * | 1949-12-29 | 1951-11-13 | Western Electric Company, Incorporated | Etching processes and solutions |
BE507187A (en) * | 1950-11-30 | |||
NL169128C (en) * | 1951-04-28 | Dordt Electromotoren | SYNCHRONOUS ELECTRIC MOTOR. | |
US2669692A (en) * | 1951-08-10 | 1954-02-16 | Bell Telephone Labor Inc | Method for determining electrical characteristics of semiconductive bodies |
GB1576783A (en) * | 1977-11-07 | 1980-10-15 | Teledyne Canada | Control apparatus for a pneumaticallyoperated hopper feeder |
-
0
- NL NL107276D patent/NL107276C/xx active
- NL NL269213D patent/NL269213A/xx unknown
- NL NL109229D patent/NL109229C/xx active
- NL NLAANVRAGE7906612,A patent/NL189573B/en unknown
- NL NL101504D patent/NL101504C/xx active
- NL NL269212D patent/NL269212A/xx unknown
-
1953
- 1953-07-28 DE DES34551A patent/DE969465C/en not_active Expired
- 1953-08-07 DE DES34714A patent/DE1115838B/en active Pending
- 1953-08-13 DE DES34794A patent/DE977619C/en not_active Expired
-
1954
- 1954-04-05 DE DES38554A patent/DE1012378B/en active Pending
- 1954-07-28 FR FR1112727D patent/FR1112727A/en not_active Expired
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE724888C (en) * | 1936-05-30 | 1942-09-09 | Siemens Ag | Method of manufacturing selenium rectifiers |
US2362545A (en) * | 1942-01-29 | 1944-11-14 | Bell Telephone Labor Inc | Selenium rectifier and method of making it |
US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
US2583681A (en) * | 1945-04-20 | 1952-01-29 | Hazeltine Research Inc | Crystal contacts of which one element is silicon |
US2560792A (en) * | 1948-02-26 | 1951-07-17 | Bell Telephone Labor Inc | Electrolytic surface treatment of germanium |
US2497770A (en) * | 1948-12-29 | 1950-02-14 | Bell Telephone Labor Inc | Transistor-microphone |
DE829191C (en) * | 1949-02-10 | 1952-01-24 | Siemens Ag | Semiconductors for rectifier or amplifier purposes |
US2619414A (en) * | 1950-05-25 | 1952-11-25 | Bell Telephone Labor Inc | Surface treatment of germanium circuit elements |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2413608A1 (en) * | 1974-03-21 | 1975-10-02 | Licentia Gmbh | Insulating coating prodn on strip contact semiconductor - using neutral aq. (potassium) peroxy-disulphate soln |
Also Published As
Publication number | Publication date |
---|---|
NL107276C (en) | 1900-01-01 |
DE969465C (en) | 1958-06-04 |
NL269213A (en) | 1900-01-01 |
NL269212A (en) | 1900-01-01 |
FR1112727A (en) | 1956-03-19 |
NL189573B (en) | 1900-01-01 |
DE1012378B (en) | 1957-07-18 |
NL101504C (en) | 1900-01-01 |
NL109229C (en) | 1900-01-01 |
DE977619C (en) | 1967-08-31 |
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