FR1089900A - Appareil à semi-conducteur comportant des jonctions p-n et méthode de fabrication - Google Patents

Appareil à semi-conducteur comportant des jonctions p-n et méthode de fabrication

Info

Publication number
FR1089900A
FR1089900A FR1089900DA FR1089900A FR 1089900 A FR1089900 A FR 1089900A FR 1089900D A FR1089900D A FR 1089900DA FR 1089900 A FR1089900 A FR 1089900A
Authority
FR
France
Prior art keywords
junctions
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1089900A publication Critical patent/FR1089900A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
FR1089900D 1952-12-29 1953-12-29 Appareil à semi-conducteur comportant des jonctions p-n et méthode de fabrication Expired FR1089900A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US328437A US2714183A (en) 1952-12-29 1952-12-29 Semi-conductor p-n junction units and method of making the same

Publications (1)

Publication Number Publication Date
FR1089900A true FR1089900A (fr) 1955-03-22

Family

ID=23280978

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1089900D Expired FR1089900A (fr) 1952-12-29 1953-12-29 Appareil à semi-conducteur comportant des jonctions p-n et méthode de fabrication

Country Status (6)

Country Link
US (1) US2714183A (en:Method)
BE (1) BE525386A (en:Method)
DE (1) DE1035275B (en:Method)
FR (1) FR1089900A (en:Method)
GB (1) GB778362A (en:Method)
NL (1) NL94129C (en:Method)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2815303A (en) * 1953-07-24 1957-12-03 Raythcon Mfg Company Method of making junction single crystals
US2877396A (en) * 1954-01-25 1959-03-10 Rca Corp Semi-conductor devices
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
US2919386A (en) * 1955-11-10 1959-12-29 Hoffman Electronics Corp Rectifier and method of making same
US2968750A (en) * 1957-03-20 1961-01-17 Clevite Corp Transistor structure and method of making the same
US3022568A (en) * 1957-03-27 1962-02-27 Rca Corp Semiconductor devices
BE623962A (en:Method) * 1961-10-24
JP2000031461A (ja) * 1998-07-09 2000-01-28 Asahi Optical Co Ltd 半導体デバイスおよび半導体組立装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2189617A (en) * 1940-02-06 Method and device for cooling me
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
FR965189A (en:Method) * 1946-10-10 1950-09-05
NL84061C (en:Method) * 1948-06-26
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
NL82014C (en:Method) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device

Also Published As

Publication number Publication date
NL94129C (en:Method)
BE525386A (en:Method)
US2714183A (en) 1955-07-26
DE1035275B (de) 1958-07-31
GB778362A (en) 1957-07-03

Similar Documents

Publication Publication Date Title
FR1086596A (fr) Procédé de fabrication des dispositifs semi-conducteurs comportant une ou plusieurs jonctions p-n
FR1093724A (fr) Dispositif semi-conducteur, et procédé de fabrication de celui-ci
FR1094661A (fr) Appareil à semi-couducteurs de grande puissance
FR1235793A (fr) Appareil à semi-conducteur
FR1192936A (fr) Dispositif conducteur dyssymétrique et procédé de fabrication
FR1089900A (fr) Appareil à semi-conducteur comportant des jonctions p-n et méthode de fabrication
FR1115448A (fr) Dispositif semi-conducteur à jonctions à forte évacuation thermique
FR1073802A (fr) Cathode perfectionnée et méthode de fabrication
FR1086434A (fr) Dispositif semi-conducteur et procédé de fabrication de ce dispositif
FR1094039A (fr) Triodes à semi-conducteur du type à jonctions
FR1148656A (fr) Semi-conducteur contenant du sillicium et méthode de fabrication pour celui-ci
CH316010A (de) Halbleiter-Gleichrichter
FR1066234A (fr) Procédé de fabrication de redresseurs à cristaux semi-conducteurs et redresseurs correspondants ainsi fabriqués
FR1085366A (fr) Perfectionnements aux pyromètres à thermo-couples
CH335366A (fr) Dispositif semi-conducteur et procédé de fabrication de celui-ci
FR1081736A (fr) Fabrication de dispositifs semi-conducteurs
FR1212132A (fr) Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
CH326704A (fr) Appareil échangeur-vaporiseur
FR1173654A (fr) Appareil semi-conducteur
FR1086903A (fr) Procédé de fabrication de monocristaux de semi-conducteurs comprenant une ou plusieurs jonctions p-n
FR1089004A (fr) Thermo-couple
FR1066609A (fr) Procédé de fabrication de fromages et dispositif en comportant application
FR1275836A (fr) Dispositifs à semi-conducteur et méthode de fabrication
FR1111581A (fr) Dispositifs semi-conducteurs et procédés de fabrication de ceux-ci
FR1072604A (fr) Appareil frigorifique perfectionné