BE525386A - - Google Patents
Info
- Publication number
- BE525386A BE525386A BE525386DA BE525386A BE 525386 A BE525386 A BE 525386A BE 525386D A BE525386D A BE 525386DA BE 525386 A BE525386 A BE 525386A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US328437A US2714183A (en) | 1952-12-29 | 1952-12-29 | Semi-conductor p-n junction units and method of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
BE525386A true BE525386A (xx) |
Family
ID=23280978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE525386D BE525386A (xx) | 1952-12-29 |
Country Status (6)
Country | Link |
---|---|
US (1) | US2714183A (xx) |
BE (1) | BE525386A (xx) |
DE (1) | DE1035275B (xx) |
FR (1) | FR1089900A (xx) |
GB (1) | GB778362A (xx) |
NL (1) | NL94129C (xx) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2815303A (en) * | 1953-07-24 | 1957-12-03 | Raythcon Mfg Company | Method of making junction single crystals |
US2877396A (en) * | 1954-01-25 | 1959-03-10 | Rca Corp | Semi-conductor devices |
DE1073111B (de) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper |
US2890976A (en) * | 1954-12-30 | 1959-06-16 | Sprague Electric Co | Monocrystalline tubular semiconductor |
US2919386A (en) * | 1955-11-10 | 1959-12-29 | Hoffman Electronics Corp | Rectifier and method of making same |
US2968750A (en) * | 1957-03-20 | 1961-01-17 | Clevite Corp | Transistor structure and method of making the same |
US3022568A (en) * | 1957-03-27 | 1962-02-27 | Rca Corp | Semiconductor devices |
NL284623A (xx) * | 1961-10-24 | |||
JP2000031461A (ja) * | 1998-07-09 | 2000-01-28 | Asahi Optical Co Ltd | 半導体デバイスおよび半導体組立装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2189617A (en) * | 1940-02-06 | Method and device for cooling me | ||
US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
FR965189A (xx) * | 1946-10-10 | 1950-09-05 | ||
NL84061C (xx) * | 1948-06-26 | |||
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
BE500302A (xx) * | 1949-11-30 | |||
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
-
0
- NL NL94129D patent/NL94129C/xx active
- BE BE525386D patent/BE525386A/xx unknown
-
1952
- 1952-12-29 US US328437A patent/US2714183A/en not_active Expired - Lifetime
-
1953
- 1953-12-29 FR FR1089900D patent/FR1089900A/fr not_active Expired
- 1953-12-29 GB GB36078/53D patent/GB778362A/en not_active Expired
- 1953-12-29 DE DEG13410A patent/DE1035275B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB778362A (en) | 1957-07-03 |
FR1089900A (fr) | 1955-03-22 |
US2714183A (en) | 1955-07-26 |
NL94129C (xx) | |
DE1035275B (de) | 1958-07-31 |