FI973731A - Lämpötilakompensointi elektroniikkalaitteissa - Google Patents
Lämpötilakompensointi elektroniikkalaitteissa Download PDFInfo
- Publication number
- FI973731A FI973731A FI973731A FI973731A FI973731A FI 973731 A FI973731 A FI 973731A FI 973731 A FI973731 A FI 973731A FI 973731 A FI973731 A FI 973731A FI 973731 A FI973731 A FI 973731A
- Authority
- FI
- Finland
- Prior art keywords
- electronic devices
- temperature compensation
- compensation
- temperature
- electronic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI973731A FI114753B (fi) | 1997-09-19 | 1997-09-19 | Lämpötilan kompensointi elektroniikkalaitteissa |
PCT/FI1998/000736 WO1999016172A2 (en) | 1997-09-19 | 1998-09-18 | Temperature compensation in electronic devices |
CNB988092719A CN1141790C (zh) | 1997-09-19 | 1998-09-18 | 在电子电路中进行温度依赖性补偿的方法及电阻性元件 |
AU92686/98A AU9268698A (en) | 1997-09-19 | 1998-09-18 | Temperature compensation in electronic devices |
EP98945337A EP1016217B1 (en) | 1997-09-19 | 1998-09-18 | Temperature compensation in electronic devices |
DE69813844T DE69813844T2 (de) | 1997-09-19 | 1998-09-18 | Temperaturkompensation in elektronischen einrichtungen |
JP2000513355A JP3833472B2 (ja) | 1997-09-19 | 1998-09-18 | 電子装置の温度補償 |
US09/522,700 US6664844B1 (en) | 1997-09-19 | 2000-03-10 | Temperature compensation in electronic devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI973731A FI114753B (fi) | 1997-09-19 | 1997-09-19 | Lämpötilan kompensointi elektroniikkalaitteissa |
Publications (3)
Publication Number | Publication Date |
---|---|
FI973731A0 FI973731A0 (fi) | 1997-09-19 |
FI973731A true FI973731A (fi) | 1999-03-20 |
FI114753B FI114753B (fi) | 2004-12-15 |
Family
ID=8549559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI973731A FI114753B (fi) | 1997-09-19 | 1997-09-19 | Lämpötilan kompensointi elektroniikkalaitteissa |
Country Status (8)
Country | Link |
---|---|
US (1) | US6664844B1 (fi) |
EP (1) | EP1016217B1 (fi) |
JP (1) | JP3833472B2 (fi) |
CN (1) | CN1141790C (fi) |
AU (1) | AU9268698A (fi) |
DE (1) | DE69813844T2 (fi) |
FI (1) | FI114753B (fi) |
WO (1) | WO1999016172A2 (fi) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100440448B1 (ko) * | 2002-04-12 | 2004-07-14 | 삼성전자주식회사 | 온도 변화에 무관한 지연 시간을 확보할 수 있는 반도체집적 회로장치 |
CN101968944B (zh) * | 2010-10-14 | 2013-06-05 | 西北工业大学 | 液晶显示驱动芯片工作温度检测电路 |
US8754700B1 (en) | 2012-12-31 | 2014-06-17 | Futurewei Technologies, Inc. | Linearity improvement over temperature using temperature dependent common-mode voltages in active mixer |
CN106796833B (zh) | 2014-10-22 | 2019-03-08 | 株式会社村田制作所 | 伪电阻电路和电荷检测电路 |
CN111464145B (zh) * | 2020-04-07 | 2023-04-25 | 成都仕芯半导体有限公司 | 一种数字步进衰减器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5651590B2 (fi) | 1974-09-24 | 1981-12-07 | ||
JPS5914005A (ja) | 1982-07-15 | 1984-01-24 | Hitachi Ltd | マイクロコンピユ−タによるシ−ケンス制御方式 |
US4717836A (en) * | 1986-02-04 | 1988-01-05 | Burr-Brown Corporation | CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure |
JPS6339962A (ja) | 1986-08-05 | 1988-02-20 | Daido Steel Co Ltd | 合成樹脂組成物 |
JP2817236B2 (ja) | 1989-07-27 | 1998-10-30 | 三菱瓦斯化学株式会社 | メタノール改質反応装置 |
US5399960A (en) * | 1993-11-12 | 1995-03-21 | Cypress Semiconductor Corporation | Reference voltage generation method and apparatus |
JPH07225622A (ja) * | 1994-02-10 | 1995-08-22 | Fujitsu Ltd | 電界効果トランジスタを用いた定電流回路 |
KR0143344B1 (ko) * | 1994-11-02 | 1998-08-17 | 김주용 | 온도의 변화에 대하여 보상 기능이 있는 기준전압 발생기 |
US5796280A (en) * | 1996-02-05 | 1998-08-18 | Cherry Semiconductor Corporation | Thermal limit circuit with built-in hysteresis |
-
1997
- 1997-09-19 FI FI973731A patent/FI114753B/fi active
-
1998
- 1998-09-18 JP JP2000513355A patent/JP3833472B2/ja not_active Expired - Lifetime
- 1998-09-18 AU AU92686/98A patent/AU9268698A/en not_active Abandoned
- 1998-09-18 CN CNB988092719A patent/CN1141790C/zh not_active Expired - Lifetime
- 1998-09-18 EP EP98945337A patent/EP1016217B1/en not_active Expired - Lifetime
- 1998-09-18 DE DE69813844T patent/DE69813844T2/de not_active Expired - Lifetime
- 1998-09-18 WO PCT/FI1998/000736 patent/WO1999016172A2/en active IP Right Grant
-
2000
- 2000-03-10 US US09/522,700 patent/US6664844B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FI973731A0 (fi) | 1997-09-19 |
CN1141790C (zh) | 2004-03-10 |
DE69813844D1 (de) | 2003-05-28 |
CN1270712A (zh) | 2000-10-18 |
AU9268698A (en) | 1999-04-12 |
EP1016217A2 (en) | 2000-07-05 |
US6664844B1 (en) | 2003-12-16 |
WO1999016172A2 (en) | 1999-04-01 |
EP1016217B1 (en) | 2003-04-23 |
JP2001517886A (ja) | 2001-10-09 |
JP3833472B2 (ja) | 2006-10-11 |
WO1999016172A3 (en) | 1999-05-14 |
FI114753B (fi) | 2004-12-15 |
DE69813844T2 (de) | 2004-02-05 |
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