FI973463A0 - Radiotaajuustehotransistorin emitterikuormituksen ohitus - Google Patents
Radiotaajuustehotransistorin emitterikuormituksen ohitusInfo
- Publication number
- FI973463A0 FI973463A0 FI973463A FI973463A FI973463A0 FI 973463 A0 FI973463 A0 FI 973463A0 FI 973463 A FI973463 A FI 973463A FI 973463 A FI973463 A FI 973463A FI 973463 A0 FI973463 A0 FI 973463A0
- Authority
- FI
- Finland
- Prior art keywords
- bypass
- radio frequency
- frequency power
- power transistor
- emitter load
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/393,683 US5684326A (en) | 1995-02-24 | 1995-02-24 | Emitter ballast bypass for radio frequency power transistors |
| PCT/SE1996/000213 WO1996026548A1 (en) | 1995-02-24 | 1996-02-16 | Emitter ballast bypass for radio frequency power transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI973463A0 true FI973463A0 (fi) | 1997-08-22 |
| FI973463A FI973463A (fi) | 1997-10-23 |
Family
ID=23555800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI973463A FI973463A (fi) | 1995-02-24 | 1997-08-22 | Radiotaajuustehotransistorin emitterikuormituksen ohitus |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5684326A (fi) |
| EP (1) | EP0811249B1 (fi) |
| JP (1) | JPH11500868A (fi) |
| KR (1) | KR100359978B1 (fi) |
| CN (1) | CN1077333C (fi) |
| AU (1) | AU4852596A (fi) |
| CA (1) | CA2213611A1 (fi) |
| DE (1) | DE69623265T2 (fi) |
| FI (1) | FI973463A (fi) |
| HK (1) | HK1018121A1 (fi) |
| WO (1) | WO1996026548A1 (fi) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5939739A (en) * | 1996-05-31 | 1999-08-17 | The Whitaker Corporation | Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors |
| AU4652097A (en) * | 1996-09-27 | 1998-04-17 | Whitaker Corporation, The | Integrated emitter drain bypass capacitor for microwave/rf power device applications |
| US5821602A (en) * | 1996-11-25 | 1998-10-13 | Spectrian, Inc. | RF power transistor having improved stability and gain |
| US5841184A (en) * | 1997-09-19 | 1998-11-24 | The Whitaker Corporation | Integrated emitter drain bypass capacitor for microwave/RF power device applications |
| SE515836C3 (sv) * | 1999-05-17 | 2001-11-06 | Ericsson Telefon Ab L M | Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning |
| US6483188B1 (en) * | 2000-05-15 | 2002-11-19 | Atheros Communications, Inc. | Rf integrated circuit layout |
| JP4949650B2 (ja) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| DE102006013078B4 (de) * | 2006-03-22 | 2008-01-03 | Semikron Elektronik Gmbh & Co. Kg | Kompaktes Leistungshalbleitermodul mit Verbindungseinrichtung |
| US8330265B2 (en) * | 2007-06-22 | 2012-12-11 | Cree, Inc. | RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks |
| CN101567363B (zh) * | 2009-06-11 | 2011-12-07 | 中国电子科技集团公司第十三研究所 | 双极结型晶体管发射极的镇流电阻 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3918080A (en) * | 1968-06-21 | 1975-11-04 | Philips Corp | Multiemitter transistor with continuous ballast resistor |
| JPS55140251A (en) * | 1979-04-12 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
| JPS5939949U (ja) * | 1982-09-08 | 1984-03-14 | アルプス電気株式会社 | 高周波回路装置 |
| IT1221867B (it) * | 1983-05-16 | 1990-07-12 | Ates Componenti Elettron | Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable |
| NL8403111A (nl) * | 1984-10-12 | 1986-05-01 | Philips Nv | Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze. |
| US4864379A (en) * | 1988-05-20 | 1989-09-05 | General Electric Company | Bipolar transistor with field shields |
| JP3039930B2 (ja) * | 1988-06-24 | 2000-05-08 | 株式会社日立製作所 | Ｍｉｓ容量の接続方法 |
| US5352911A (en) * | 1991-10-28 | 1994-10-04 | Trw Inc. | Dual base HBT |
| IT1252102B (it) * | 1991-11-26 | 1995-06-02 | Cons Ric Microelettronica | Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast |
| JP2762851B2 (ja) * | 1992-07-27 | 1998-06-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5378922A (en) * | 1992-09-30 | 1995-01-03 | Rockwell International Corporation | HBT with semiconductor ballasting |
| US5321279A (en) * | 1992-11-09 | 1994-06-14 | Texas Instruments Incorporated | Base ballasting |
-
1995
- 1995-02-24 US US08/393,683 patent/US5684326A/en not_active Expired - Fee Related
-
1996
- 1996-02-16 CN CN96193307A patent/CN1077333C/zh not_active Expired - Fee Related
- 1996-02-16 AU AU48525/96A patent/AU4852596A/en not_active Abandoned
- 1996-02-16 EP EP96904409A patent/EP0811249B1/en not_active Expired - Lifetime
- 1996-02-16 WO PCT/SE1996/000213 patent/WO1996026548A1/en active IP Right Grant
- 1996-02-16 CA CA002213611A patent/CA2213611A1/en not_active Abandoned
- 1996-02-16 JP JP8525609A patent/JPH11500868A/ja not_active Abandoned
- 1996-02-16 DE DE69623265T patent/DE69623265T2/de not_active Expired - Fee Related
- 1996-02-16 KR KR1019970705871A patent/KR100359978B1/ko not_active IP Right Cessation
-
1997
- 1997-08-22 FI FI973463A patent/FI973463A/fi unknown
-
1998
- 1998-10-29 HK HK98111605A patent/HK1018121A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0811249B1 (en) | 2002-08-28 |
| CN1077333C (zh) | 2002-01-02 |
| HK1018121A1 (en) | 1999-12-10 |
| KR19980702471A (ko) | 1998-07-15 |
| EP0811249A1 (en) | 1997-12-10 |
| FI973463A (fi) | 1997-10-23 |
| JPH11500868A (ja) | 1999-01-19 |
| WO1996026548A1 (en) | 1996-08-29 |
| DE69623265T2 (de) | 2003-11-27 |
| AU4852596A (en) | 1996-09-11 |
| CA2213611A1 (en) | 1996-08-29 |
| US5684326A (en) | 1997-11-04 |
| KR100359978B1 (ko) | 2003-05-16 |
| CN1181843A (zh) | 1998-05-13 |
| DE69623265D1 (de) | 2002-10-02 |
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