FI46968C - Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi - Google Patents

Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi

Info

Publication number
FI46968C
FI46968C FI652007A FI200765A FI46968C FI 46968 C FI46968 C FI 46968C FI 652007 A FI652007 A FI 652007A FI 200765 A FI200765 A FI 200765A FI 46968 C FI46968 C FI 46968C
Authority
FI
Finland
Prior art keywords
isoquinolo
diazepines
hexahydro
benzo
preparation
Prior art date
Application number
FI652007A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI46968B (OSRAM
Inventor
Hans Ott
Original Assignee
Sandoz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by Sandoz Ag filed Critical Sandoz Ag
Priority to FI25173A priority Critical patent/FI49620C/fi
Application granted granted Critical
Publication of FI46968B publication Critical patent/FI46968B/fi
Publication of FI46968C publication Critical patent/FI46968C/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Rectifiers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thyristors (AREA)
FI652007A 1964-08-07 1965-08-23 Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi FI46968C (fi)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FI25173A FI49620C (fi) 1964-08-07 1973-01-29 Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo-/2,1-d/bentso/1,4/diatsepiini-6-oni-yhdisteiden valmistami seksi.

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (2)

Publication Number Publication Date
FI46968B FI46968B (OSRAM) 1973-05-02
FI46968C true FI46968C (fi) 1973-08-10

Family

ID=27541415

Family Applications (1)

Application Number Title Priority Date Filing Date
FI652007A FI46968C (fi) 1964-08-07 1965-08-23 Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi

Country Status (17)

Country Link
BE (1) BE668687A (OSRAM)
BG (1) BG17566A3 (OSRAM)
BR (4) BR6572394D0 (OSRAM)
CA (1) CA953297A (OSRAM)
CH (5) CH460031A (OSRAM)
CY (1) CY613A (OSRAM)
DE (3) DE1514363B1 (OSRAM)
ES (1) ES337005A1 (OSRAM)
FI (1) FI46968C (OSRAM)
FR (2) FR4985M (OSRAM)
GB (7) GB1084598A (OSRAM)
IL (1) IL24214A (OSRAM)
MC (1) MC542A1 (OSRAM)
MY (1) MY7100223A (OSRAM)
NL (4) NL6510287A (OSRAM)
NO (1) NO120580B (OSRAM)
SE (5) SE312863B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (OSRAM) 1971-10-01 1976-05-22
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated side surfaces and process for their production.
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor arrangement with p-n junctions separated by trenches and method for their production.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL255453A (OSRAM) * 1960-02-04
NL284599A (OSRAM) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
GB1112334A (en) 1968-05-01
GB1133376A (en) 1968-11-13
FR5364M (OSRAM) 1967-09-11
CH460033A (de) 1968-07-31
CY613A (en) 1971-10-01
BR6572394D0 (pt) 1973-08-14
NL6611133A (OSRAM) 1967-02-10
GB1126352A (en) 1968-09-05
NL6607936A (OSRAM) 1966-12-12
IL24214A (en) 1969-06-25
BE668687A (OSRAM) 1966-02-23
DE1564537B2 (de) 1973-01-25
SE351641B (OSRAM) 1972-12-04
CH460008A (de) 1968-07-31
CH460031A (de) 1968-07-31
GB1126353A (en) 1968-09-05
NL129867C (OSRAM) 1900-01-01
SE345040B (OSRAM) 1972-05-08
BR6680263D0 (pt) 1973-03-01
SE322227B (OSRAM) 1970-04-06
DE1620295C3 (de) 1975-05-22
DE1620295A1 (de) 1970-02-19
CA953297A (en) 1974-08-20
ES337005A1 (es) 1968-01-16
BR6572393D0 (pt) 1973-08-14
BR6681707D0 (pt) 1973-09-06
DE1620295B2 (de) 1974-10-03
GB1120488A (en) 1968-07-17
DE1514363B1 (de) 1970-06-18
DE1620294A1 (de) 1970-02-05
MY7100223A (en) 1971-12-31
DE1564537A1 (de) 1970-07-30
FR4985M (OSRAM) 1967-04-10
GB1126354A (en) 1968-09-05
NO120580B (OSRAM) 1970-11-09
SE350500B (OSRAM) 1972-10-30
MC542A1 (fr) 1966-04-06
CH460007A (de) 1968-07-31
NL6510287A (OSRAM) 1966-02-08
SE312863B (OSRAM) 1969-07-28
BG17566A3 (bg) 1973-11-10
FI46968B (OSRAM) 1973-05-02
GB1084598A (en) 1967-09-27
CH466298A (de) 1968-12-15

Similar Documents

Publication Publication Date Title
FI42712C (fi) Menetelmä terapeuttisesti vaikuttavien bifenyylialkaanijohdannaisten valmistamiseksi
FI49300C (fi) Menetelmä terapeuttisesti aktiivisten 1,4-dihydropyridiinijohdannaiste n valmistamiseksi.
FI48590C (fi) Menetelmä terapeuttisesti käytettävien atsaspiroalkaanidioniyhdisteide n valmistamiseksi.
FI52335C (fi) Menetelmä terapeuttisesti vaikuttavien trisyklisten etyyliamiini-johda nnaisten valmistamiseksi.
FI45447C (fi) Menetelmä terapeuttisesti aktiivisten imidatsolijohdannaisten valmista miseksi
FI46848C (fi) Menetelmä terapeuttisesti vaikuttavien 3-halogeeni-3H-1,2-dihydro-1,4- bentsodiatsepiini-2-onien valmistamiseksi.
FI49419C (fi) Analogiamenetelmä antikolinergisesti vaikuttavien N-(substituoitujen a mino-alkynyyli)-laktaamien valmistamiseksi.
FI45041C (fi) Menetelmä terapeuttisesti käyttökelpoisten pyrroli-johdannaisten valmi stamiseksi.
FI46961C (fi) Menetelmä terapeuttisesti aktiivisten 5-nitroimidatsolikarbamaattien v almistamiseksi
SE218697C1 (sv) Förfarande för framställning av 7-pyrazolyl-(1')-3-fenyl-kumarin
SE220352C1 (sv) Förfarande för framställning av 2,4-diamino-pyrido[2,3-d]pyrimidiner
FI47189C (fi) Tapa valmistaa terapeuttisesti vaikuttavia d-lysergiinihappo-N-fenyyli piperatsideja.
FI50879C (fi) Menetelmä terapeuttisesti vaikuttavien substituoitujen 3-aminoasyyliam ino-tiofeenien valmistamiseksi.
FI45043C (fi) Menetelmä terapeuttisesti vaikuttavien, substituoitujen butynyyli-suks iini-imidien ja -glutaari-imidien valmistamiseksi.
FI48190C (fi) Menetelmä terapeuttisesti aktiivisten 10alfa-metoksi-9,10-dihydroergol iinijohdannaisten valmistamiseksi
NO741044L (no) Analogifremgangsmåte for fremstilling av terapeutisk aktive triaziner.
FI48576C (fi) Menetelmä terapeuttisesti aktiivisten alfa-fluori-malonihappojohdannai sten valmistamiseksi.
FI47358C (fi) Menetelmä terapeuttisesti käytettävän 4'-demetyyli-epipodofyllotoksiin i-beta-D-glukosidin valmistamiseksi.
FI45045C (fi) Menetelmä uusien terapeuttisesti vaikuttavien 5-nitro-2-furyyli-isoksa tsolijohdannaisten valmistamiseksi.
FI46385C (fi) Menetelmä terapeuttisesti arvokkaiden 1,3-dihydro-3-hydroksi-2H-1,4-be ntsodiatsepiini-2-onijohdannaisten valmistamiseksi.
FI50243C (fi) Menetelmä terapeuttisesti vaikuttavien N-substituoitujen 3-hydroksi-9- atsamorfinaanien valmistamiseksi.
NO740982L (no) Analogifremgangsmåte for fremstilling av terapeutisk aktive omega-nitroacetofenonderivater.
FI49620C (fi) Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo-/2,1-d/bentso/1,4/diatsepiini-6-oni-yhdisteiden valmistami seksi.
FI43994C (fi) Menetelmä uusien terapeuttisesti vaikuttavien 1,2-diaryyli-4-alkyyli-3,5-diokso-pyratsolidiinien valmistamiseksi
FI48732C (fi) Menetelmä farmakologisesti aktiivisten 3-substituoitu-amino-1,2,3,4-te trahydrokarbatsolien valmistamiseksi.