ES8602302A1 - Elemento hall integrable particularmente utilizable como sensor de campos magneticos - Google Patents

Elemento hall integrable particularmente utilizable como sensor de campos magneticos

Info

Publication number
ES8602302A1
ES8602302A1 ES538715A ES538715A ES8602302A1 ES 8602302 A1 ES8602302 A1 ES 8602302A1 ES 538715 A ES538715 A ES 538715A ES 538715 A ES538715 A ES 538715A ES 8602302 A1 ES8602302 A1 ES 8602302A1
Authority
ES
Spain
Prior art keywords
current electrode
hall element
current
semiconductor layer
sensor electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES538715A
Other languages
English (en)
Other versions
ES538715A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Building Technologies AG
Landis and Gyr AG
Original Assignee
Landis and Gyr AG
LGZ Landis and Gyr Zug AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4314259&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES8602302(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Landis and Gyr AG, LGZ Landis and Gyr Zug AG filed Critical Landis and Gyr AG
Publication of ES8602302A1 publication Critical patent/ES8602302A1/es
Publication of ES538715A0 publication Critical patent/ES538715A0/es
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/08—Arrangements for measuring electric power or power factor by using galvanomagnetic-effect devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

ELEMENTO HALL INTEGRABLE, PARTICULARMENTE UTILIZABLE COMO SENSOR DE CAMPOS MAGNETICOS. CONSTA DE UNA CAPA SEMICONDUCTORA (6) DE UN DETERMINADO TIPO DE CONDUCTIVIDAD, JUNTO A CUYA SUPERFICIE ESTAN DISPUESTOS DOS ELECTRODOS SENSORES (4, 5) Y UN PRIMER ELECTRODO DE CORRIENTE (2), QUE SE ENCUENTRA POR LO MENOS APROXIMADAMENTE EN EL CENTRO ENTRE AMBOS ELECTRODOS SENSORES (4, 5) Y SOBRE SU LINEA RECTA DE UNION. POR LO MENOS UN ELECTRODO DE CORRIENTE DISTRIBUIDO ADICIONAL, POR EJEMPLO UN SEGUNDO ELECTRODO DE CORRIENTE (3) DE FORMA CILINDRICA CON SECCION TRANSVERSAL EN FORMA SEMICIRCULAR, ESTA DISPUESTO DE MANERA TAL QUE TODAS LAS CORRIENTES QUE FLUYEN EN FUNCIONAMIENTO ENTRE LOS ELECTRODOS DE CORRIENTES (2, 3) FORMAN UNA RESULTANTE VECTORIAL DE CORRIENTE.
ES538715A 1983-12-19 1984-12-18 Elemento hall integrable particularmente utilizable como sensor de campos magneticos Granted ES538715A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH6739/83A CH662905A5 (de) 1983-12-19 1983-12-19 Integrierbares hallelement.

Publications (2)

Publication Number Publication Date
ES8602302A1 true ES8602302A1 (es) 1985-11-16
ES538715A0 ES538715A0 (es) 1985-11-16

Family

ID=4314259

Family Applications (1)

Application Number Title Priority Date Filing Date
ES538715A Granted ES538715A0 (es) 1983-12-19 1984-12-18 Elemento hall integrable particularmente utilizable como sensor de campos magneticos

Country Status (7)

Country Link
US (2) US4782375A (es)
EP (1) EP0148330B1 (es)
JP (1) JPS60187072A (es)
AT (1) ATE29340T1 (es)
CH (1) CH662905A5 (es)
DE (1) DE3465838D1 (es)
ES (1) ES538715A0 (es)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH669068A5 (de) * 1986-04-29 1989-02-15 Landis & Gyr Ag Integrierbares hallelement.
DE58905956D1 (de) * 1988-09-21 1993-11-25 Landis & Gyr Business Support Hallelement.
DE4118255A1 (de) * 1991-06-04 1992-12-10 Itt Ind Gmbh Deutsche Monolithisch integrierter sensorschaltkreis in cmos-technik
US5179429A (en) * 1992-03-30 1993-01-12 Motorola, Inc. Magnetic field sensor with split collector contacts for high sensitivity
EP0689723B1 (de) * 1993-03-08 1997-06-04 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Berlin Halleffekt-einrichtung mit strom- und hallspannungs-anschlüssen
US5543988A (en) * 1993-04-30 1996-08-06 International Business Machines Corporation Hall sensor with high spatial resolution in two directions concurrently
JP3583458B2 (ja) * 1994-03-09 2004-11-04 株式会社東芝 ホール素子
US5548151A (en) * 1994-03-09 1996-08-20 Kabushiki Kaisha Toshiba Hall element for detecting a magnetic field perpendicular to a substrate
US5663075A (en) * 1994-07-14 1997-09-02 The United States Of America As Represented By The Secretary Of The Air Force Method of fabricating backside illuminated FET optical receiver with gallium arsenide species
JP3602611B2 (ja) * 1995-03-30 2004-12-15 株式会社東芝 横型ホール素子
US5831513A (en) * 1997-02-04 1998-11-03 United Microelectronics Corp. Magnetic field sensing device
US6013589A (en) * 1998-03-13 2000-01-11 The Procter & Gamble Company Absorbent materials for distributing aqueous liquids
ATE308761T1 (de) * 1998-03-30 2005-11-15 Sentron Ag Magnetfeldsensor
EP0954085A1 (de) 1998-04-27 1999-11-03 Roulements Miniatures S.A. Senkrechter Hallsensor und bürstenloser Elektromotor mit einem senkrechten Hallsensor
DE19857275A1 (de) * 1998-12-11 2000-06-15 Johannes V Kluge Integrierbarer Magnetfeldsensor aus Halbleitermaterial
DE10007868B4 (de) * 2000-02-21 2010-02-18 Robert Bosch Gmbh Elektronische Steuerschaltung
US20020173065A1 (en) * 2001-05-01 2002-11-21 Smith Marshall E. E. Method for forming a compact sensing apparatus in a dual-piece monolithic substrate
WO2003032410A1 (fr) * 2001-10-01 2003-04-17 Asahi Kasei Microsystems Co., Ltd. Dispositif a effet hall et capteur magnetique
DE10150950C1 (de) * 2001-10-16 2003-06-18 Fraunhofer Ges Forschung Kompakter vertikaler Hall-Sensor
DE10150955C1 (de) * 2001-10-16 2003-06-12 Fraunhofer Ges Forschung Vertikaler Hall-Sensor
DE50215023D1 (de) * 2002-09-10 2011-06-01 Melexis Tessenderlo Nv Magnetfeldsensor mit einem hallelement
JP4696455B2 (ja) * 2004-03-09 2011-06-08 株式会社デンソー ホール素子および磁気センサおよび磁気検出方法
JP4798102B2 (ja) * 2004-03-30 2011-10-19 株式会社デンソー 縦型ホール素子
JP2005333103A (ja) * 2004-03-30 2005-12-02 Denso Corp 縦型ホール素子およびその製造方法
WO2006028427A1 (fr) * 2004-09-09 2006-03-16 Inessa Antonovna Bolshakova Capteur de mesure de champ magnetique
DE102005051306A1 (de) * 2004-10-28 2006-06-08 Denso Corp., Kariya Vertikale Hallvorrichtung und Verfahren zur Einstellung der Offsetspannung einer vertikalen Hallvorrichtung
DE102005030257A1 (de) * 2005-06-29 2007-01-18 Bayerische Motoren Werke Ag Vorrichtung mit Hallschalter in einem Kraftfahrzeug
EP1746426B1 (de) 2005-07-22 2019-03-06 Melexis Technologies NV Stromsensor
EP1772737A3 (de) * 2005-10-08 2008-02-20 Melexis Technologies SA Baugruppe zur Strommessung
WO2007069680A1 (ja) * 2005-12-16 2007-06-21 Asahi Kasei Emd Corporation 位置検出装置
US8159219B2 (en) * 2008-10-20 2012-04-17 University Of North Carolina At Charlotte MEMS 2D and 3D magnetic field sensors and associated manufacturing method
CH699933A1 (de) * 2008-11-28 2010-05-31 Melexis Technologies Sa Vertikaler Hallsensor.
EP2234185B1 (en) * 2009-03-24 2012-10-10 austriamicrosystems AG Vertical Hall sensor and method of producing a vertical Hall sensor
US9484525B2 (en) * 2012-05-15 2016-11-01 Infineon Technologies Ag Hall effect device
FR3006501A1 (fr) * 2013-05-30 2014-12-05 St Microelectronics Sa Capteur integre a effet hall
KR102019514B1 (ko) * 2013-06-28 2019-11-15 매그나칩 반도체 유한회사 반도체 기반의 홀 센서
US9291648B2 (en) 2013-08-07 2016-03-22 Texas Instruments Incorporated Hybrid closed-loop/open-loop magnetic current sensor
US9753097B2 (en) * 2014-05-05 2017-09-05 Allegro Microsystems, Llc Magnetic field sensors and associated methods with reduced offset and improved accuracy
EP2966462B1 (en) 2014-07-11 2022-04-20 Senis AG Vertical hall device
KR102103608B1 (ko) 2014-07-16 2020-04-23 매그나칩 반도체 유한회사 수직형 홀 센서, 홀 센서 모듈 및 그 제조 방법
DE102016202943B3 (de) 2016-02-25 2017-05-18 Bruker Biospin Ag Messkopf einer NMR-MAS-Apparatur mit Vorrichtung zur Bestimmung des Winkels zwischen MAS-Rotor und statischem Magnetfeld
JP6910150B2 (ja) * 2017-01-18 2021-07-28 エイブリック株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692595A (en) * 1969-05-28 1972-09-19 Hudson Corp Method of fabricating a semiconductor magnetic transducer
US3683242A (en) * 1971-06-09 1972-08-08 Jearld L Hutson Semiconductor magnetic device
NL173335C (nl) * 1972-06-01 1984-01-02 Philips Nv Hall-element.
US3994010A (en) * 1975-03-27 1976-11-23 Honeywell Inc. Hall effect elements
DE2860654D1 (en) * 1977-09-08 1981-08-06 Gen Electric Co Ltd Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device
FR2412949A1 (fr) * 1977-12-26 1979-07-20 France Etat Dispositif semi-conducteur pour capter un champ magnetique
US4253107A (en) * 1978-10-06 1981-02-24 Sprague Electric Company Integrated circuit with ion implanted hall-cell
JPS5572091A (en) * 1978-11-24 1980-05-30 Victor Co Of Japan Ltd Hall element
JPS58215882A (ja) * 1982-06-07 1983-12-15 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン ドキユメント分類方法
JPS58220474A (ja) * 1982-06-15 1983-12-22 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応ダイオ−ド
US4516144A (en) * 1982-09-23 1985-05-07 Eaton Corporation Columnated and trimmed magnetically sensitive semiconductor

Also Published As

Publication number Publication date
CH662905A5 (de) 1987-10-30
EP0148330B1 (de) 1987-09-02
ES538715A0 (es) 1985-11-16
ATE29340T1 (de) 1987-09-15
US4987467A (en) 1991-01-22
JPS6355227B2 (es) 1988-11-01
JPS60187072A (ja) 1985-09-24
DE3465838D1 (de) 1987-10-08
EP0148330A2 (de) 1985-07-17
EP0148330A3 (en) 1985-08-14
US4782375A (en) 1988-11-01

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